S0T186 Search Results

BD947F

Abstract: BD943F BD943 BD944F BD945F BD948F
Contextual Info: BD943F; BD945F BD947F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a S0T186 envelope w ith an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F. QUICK REFERENCE DATA BD943F 948F 947F

FR4 epoxy glass 1.5mm substrate

Abstract: sheet metal press bending machine
Contextual Info: MOUNTING INSTRUCTIONS page Axial-leaded devices 562 SOT54 T092 563 SOT82 564 SOT78 (T0220AB); SOT186A 567 SOT223; SOT428; SOT4Q4 572 Philips Semiconductors Mounting instructions Axial-ieaded devices GENERAL DATA AND INSTRUCTIONS General rules Excessive forces or temperature applied to a diode may

BUK417-500B

Abstract: TOPFETs FETs T0-220AB mosfet BUK454-600 BUK617-500BE BUK551-100A PHILIPS MOSFET igbt Philips Semiconductors Selection Guide Igbts guide
Contextual Info: Philips Semiconductors PowerMOS Transistors including TO P FETs and IGBTs V DS V @ ID (A) Rdsjon) (ß) Id w Selection Guide Pd (W) TYPE NUMBER TECH NO LO GY ENVELOPE SOT263 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50S TOPFET SOT263

Contextual Info: Philips Semiconductors High-voltage and Switching NPN Power Transistors ^ . Genaral TRANSISTOR RATINGS VCEmax The maximum permissible instantaneous Cut-off voltage between collector and emitter terminals when the emitter current is reduced to zero by means of a reverse emitter base voltage, i.e.