S2041 Search Results

S2041

Abstract: 741s
Contextual Info: PHOTOTRANSISTORS S2041, S2042, S2043 H A M A M A T S U TECHNICAL DATA The S2041, S2042 and S2043 are high-sensitivity NPN type phototransistors developed on the basis of H am am atsu’s long experience and high technology in photonics. The S2041 and S2042 have TO-18 metal packages and

Contextual Info: H A M A M A T S U CORP DE i M a S T b O ì m , 4229609 HA MAMA TSU CORP OOPlEfll M 4iC ;òl28i H A M A M IE r! | O' • T -41 -61 PHOTOTRANSISTORS S2041, S2042, S2043 TECHNICAL DATA SHEET The S2041, S2042 and S2043 are high-sensitivity NPN type phototransistors developed on the basis of

JANTX1N1202A

Contextual Info: Standard Recovery Rectifiers Part Number Microscml Division Package Typo Mil Outline .1. ! Spee • 1 REC 1N3925 1N1199 1N1199A 1N1199B 1N2598 UT8105 1N1200 1N1200A 1N1200B R20410 S20410 UT8110 1N1201 1N1201A 1N1201B 1N1202 1N1202A 1N1202B 1N4506

Contextual Info: September 19, 2006 Rev -1.1 PEL National Semiconductor Evaluation Board User's Guide DAC124S085 12-Bit Quad, DAC104S085 10-Bit Quad, DAC084S085 8-Bit Quad, DAC122S085 12-Bit Dual, DAC102S085 10-Bit Dual, DAC082S085 8-Bit Dual Micro Power Digital-to-Analog Converter

S4582

Abstract: photodiodes 2d C4757 psd photodiode C4758
Contextual Info: Related Products c PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology. i Peak Sensitivity Photocurrent

S20460

Abstract: 1N1199 1N1199A 1N1199B 1N1200 1N1200A 1N1200B 1N1201 1N1201B S20410
Contextual Info: Sil 'con F3OW er Rectifier s / R 2 - Series Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes J 1 h p ^ ^ f J in V 11 A— ü 1 c. F t 1 E A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re ad s within 2 1 /2 threads 3. Standard P olarity: Stud is

K 2056 transistor

Abstract: ccd Linear Image Sensor transistor K 2056 s11151 S11151-2048
Contextual Info: CCD linear image sensor S11151-2048 High sensitivity in the ultraviolet region, front-illuminated CCD Despite a front-illuminated CCD, the S11151-2048 offers high sensitivity in the ultraviolet region 200 nm nearly equal to back-thinned CCD. Features Applications

Contextual Info: PRELIMINARY DATA SHEET SKY65170-11: 860 – 900 MHz, 0.5 W High Power Power Amplifier Applications Description • CDMA2000 cellular band Skyworks SKY65170-11 is a fully-matched, 0.5 W Power Amplifier PA with high efficiency, designed for use in the 860 to

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: SUM110N06-04L New Product Vishay Siliconix N-Channel 60-V D-S 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0035 @ VGS = 10 V 60 D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package ID (A) 110 a

Contextual Info: PRELIMINARY DATA SHEET SKY65171-11: 1930 – 1990 MHz, 0.5 W High Power Power Amplifier Applications Description • CDMA2000 cellular band Skyworks SKY65171-11 is a fully-matched, 0.5 W Power Amplifier PA with high efficiency, designed for use in the 1930 to

201379B

Contextual Info: DATA SHEET SKY65170-21: 860 – 960 MHz, 0.5 W High Power Power Amplifier Applications Description • CDMA2000 cellular band Skyworks SKY65170-21 is a fully-matched, 0.5 W Power Amplifier PA with high efficiency, designed for use in the 860 to 960 MHz band.

Si4836DY

Contextual Info: Si4836DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 D TrenchFETr Power MOSFET D PWM Optimized rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 APPLICATIONS 0.004 @ VGS = 2.5 V 22 0.005 @ VGS = 1.8 V 19 D Low Voltage Synchronous Rectfication

20417

Abstract: SUM110N08-05
Contextual Info: SUM110N08-05 New Product Vishay Siliconix N-Channel 75-V D-S 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.0048 @ VGS = 10 V 110 a D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS

IN1200

Contextual Info: Silicon Power Rectifier S / R 2 0 4 Series Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 -3 2 UNF3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity: Stud Is Cathode Reverse Polarity. Stud is Anode A B C D E F G H J M

SOT23 WV4

Abstract: wv4 sot23 wv4 sot-23 S1011E-36-ND wv4 diode L1210 wv4 86 1N4001 24C02 LM4040
Contextual Info: National Semiconductor July 25, 2006 Rev - 2.1/CS RoHS Compliant Evaluation Board User's Guide ADC121S625 12-Bit, 50 kSPS to 200 kSPS, Differential Input, Micro-Power Sampling A/D Converter 1 http://www.national.com Table of Contents 1.0 Introduction 3 2.0 Board Assembly

1N4012

Abstract: A 260 D
Contextual Info: Standard Recovery Rectifiers Micmsemi 4 P art Num ber 1N1206A 1N1206B 1N1206B 1N4508 JAN1N1206A JANTX1N1206A JANTXV1N1206 PPR41206 R20460 S20460 UT8160 1N3670 1N3670A 1N4012 1N3671 1N3671A 1N4013 1N4509 JAN1N3671A JANTX1N3671A JANTXV1N3671 PPR4120B R20480

Contextual Info: SUM110N08-05 New Product Vishay Siliconix N-Channel 75-V D-S 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.0048 @ VGS = 10 V 110 a D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS

Contextual Info: SUM110N08-05 New Product Vishay Siliconix N-Channel 75-V D-S 200_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.0048 @ VGS = 10 V 110 a D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS

1N1128

Abstract: 1N120 1N119 1N1124 S20460 1N1199 M600400 1N1199B 1N1200 1N1200B
Contextual Info: Silicon Power Rectifier S/R204 Series Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode

B 1032 BROWN BOVERI

Abstract: BROWN BOVERI bbc B 1032 diode BBC 1N1200A R20410 S20410 10-32 UNF 2A N120 1N1202
Contextual Info: BBC BROWN BOVERI «FMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEIM Silicon Power Rectifiers Geschäftsbereich Halbleiter und Stromrichter Telefon 06206 503-1, Telex 04-65 727 Postfach 200, D-6840 Lampertheim Series 204 12 Amperes Average Brochure Order No.

Contextual Info: CCDリニアイメージセンサ S11151-2048 紫外域で高感度を実現した表面入射型CCD S11151-2048は表面入射型CCDでありながら、紫外域 200 nm において裏面入射型CCDと同等の感度を実現したCCD リニアイメージセンサです。