SE308 Search Results

NEC em1

Contextual Info: DATA SH EET NEC aECTRON DEVICE PHOTO TRANSISTOR PH108A PHOTO TRAN SISTO R -NEPOC SERIES— DESCRIPTION The PH108A i s a photo t r a n s i s t o r in a p l a s t i c mold -package, and very s u ita b le for a d e te c to r o f a photo I n te r r u p te r with com b ination o f th e SE308.

photo transistor application

Abstract: PH108 "Photo Interrupter" cd photo detector SE308 photo transistor high current photo interrupter PHOTO SENSOR of application
Contextual Info: N E C ELECTRONICS INC 3GE J> • b4a?52S OOETSTB T ■ PHOTO TRANSISTO R PH108 PHOTO TRA N SISTO R DESCRIPTION The PH 108 is a photo transistor in a plastic molded package, and very suitable for a detector of a photo interrupter with combination of the SE308.

Contextual Info: GaAs INFRARED LIGHT EMITTING DIODE SE308 FEATURES_ DESCRIPTION_ • SMALL SIZE PLASTIC MOLDED PACKAGE • HIGH OUTPUT POWER The SE308 is a GaAs Gallium Arsenide Infrared Light Emitting Diode which is mounted on the lead frames and

SE308T

Contextual Info: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE SE308-T GaAs INFRARED EMITTING DIODE -N E P O C SERIES— D ESCRIPTIO N The SE308 is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lud frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm.

PH108

Abstract: SE308
Contextual Info: N E C E L E C T R O N I C S INC 3GE D • bMETSES Q02TÔ54 0 ■ T-UçJ- 1| LIGHT EM ITTING DIODE SE308 G aA s IN F R A R E D E M IT T IN G D IO D E DESCRIPTION The S E 3 0 8 is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lead frames and molded in plastic.

L2683-01

Abstract: SE314 122dl 18AF tokin 473 5.5v SE306 SE307-C SE308 SE313 SE3161L
Contextual Info: - • it ¥ H it U tl £ Po min imW f t 14 tSL f t If Ik I f n = 25*0 (T„=25*C ) WS W f± ; t- 4^ # : f t I f Xp /iSIEiiS if- is. m I f Pi> m * T„pr (m A) min!mW'sr' (mA) ty p (V) m a x (V) (m A) ty p (nm) ty p (deg) (m A) (m W ) rc ) - - 0.2 10 1.1

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

Contextual Info: IC BUILT-IN PHOTODIODE PH502HR FEATURES DESCRIPTION_ • SCHMIDT TRIGGER CIRCUIT INCORPORATED • LOW THRESHHOLD IRRADIANCE Huh = 50 nW/cm2 MAX • DIRECT CONNECTION WITH TTL, LSTTL, AND CMOS ALLOWED The PH502HR is a digital-output light receiving IC, integrating

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

high speed Photointerrupter 6 pin

Contextual Info: PHOTOTRANSISTOR PH108 FEATURES DESCRIPTION_ • SMALL SIZE PLASTIC MOLDED PACKAGE 4.0 x 2.8 x 2.5 mm • HIGH SENSITIVITY II = 0.9 mA TYP @ Vce = 5 V, H = 0.5 mW/cm2 • SPECTRALLY MATCHED TO GaAs INFRARED EMITTER The PH108 is a phototransistor in a plastic molded package

PH108A

Contextual Info: SMALL TYPE SILICON PHOTOTRANSISTOR PH108A FEATURES DESCRIPTION • SMALL PACKAGE 4.0 x 2.8 x 2.5 mm • HIGH SPECTRAL SENSITIVITY Sensitivity active wavelength: 820 nm TYP • HIGH SENSITIVITY II = 0.6 mA TYP @ V c e = 5 V, H = 0.5 mW/cm2 The PH108A is a small type high sensitivity phototransistor

PS2009B

Abstract: SE303 PS2003
Contextual Info: NEC ELECTRONICS IÑC ST inF|fc,4S7525 □□0S4SS 1 INFRARED LED TYPE NO. MATERIAL SE301A GaAs SE302A GaAs SE303 GaAs SE303A GaAs SE304 GaAs x T ' *//'/3 High output High reliability M ini size High output N arrow radiation angle High output W ide radiation angle

Contextual Info: 1C BUILT-IN PHOTODIODE PH502HC FEATURES_ DESCRIPTION_ • The PH502HC is a digital-output light receiving IC, integrating a photodiode and a signal processing circuit in one chip. Direct connection with an IC without using a processing circuit

Contextual Info: Ì S R m HHÌ NEC PHOTO DIODE H SU «* PH502HC 1C BU8LT-ÍN PHOTO DIODE NEPOC SERIES The PH502HC is a digital-output light receiving 1C integrating a photo diode and signal processing circuit in a chip. And the direct connection with an 1C without using a processing circuit simplifies the circuit configuration. It is the most suitable as

NDL1102

Abstract: LF50 bh27ss5 SE1003-C SE301A SE302A SE303A-C SE304 SE306 SE307-C
Contextual Info: N E C ELECTRONICS INC 30E D bH27SS5 DOSSSb? T NEC OPTOELECTRONIC DEVICES L igh t Em itting D iodes cont. Remoie Control Absolute Maximum Ratings (Ta = 2» C) Ir TYP. (f/A) (V„=3V) -65 to +125 1.2 (lp=50 mA) 0.01 50 -30 to +80 1.2 150 100 1.25 -40 to +100