STP60N Search Results

HA 1137

Abstract: STP60N05 STP60N05FI
Contextual Info: 712'1237 004fci53cî Dñ2 • S6TH SCS-THOMSON l G  L IK S ï^ M O S T P 6 0 N û S S T P 6 0 N 0 5 0 5 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI . ■ ■ . . . . . . V dss R dS OII Id 50 V 50 V < 0.02 Q < 0.02 £2

p60n

Abstract: JESD97 P60NH2LL STP60NH2LL
Contextual Info: STP60NH2LL N-channel 24V - 0.010Ω - 40A TO-220 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP60NH2LL 24V <0.011Ω 40A(1) 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

schematic diagram 48v dc motor 200A speed control

Abstract: STP60NF06 STP16NF06 STP16NF06FP STP60NF06FP *p60nf06
Contextual Info: STP16NF06 STP16NF06FP N-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP STripFET II POWER MOSFET TYPE STP16NF06 STP60NF06FP • ■ ■ ■ VDSS RDS on ID 60 V 60 V <0.1 Ω <0.1 Ω 16 A 11 A TYPICAL RDS(on) = 0.08Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC

Contextual Info: STP60NS04Z N - CHANNEL CLAMPED 10m ^ - 60A - T0-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE STP60N S04Z V dss R dS oii Id CLAM PED < 0 .0 1 5 Q. 60 A . . TYPICAL RDS(on) =0.010 £2 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE

Contextual Info: STP60NS04Z N-CHANNEL CLAMPED 10mΩ - 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60NS04Z • ■ ■ ■ V DSS R DS on ID CLAMPED <0.015 Ω 60 A TYPICAL RDS(on) = 0.010 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION

Contextual Info: STP16NF06L STP16NF06LFP N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP STripFET II POWER MOSFET TYPE STP16NF06L STP60NF06LFP • ■ ■ ■ VDSS RDS on ID 60 V 60 V <0.09 Ω <0.09 Ω 16 A 11 A TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC

P60NF

Abstract: P60NF10 MOSFET P60NF10 P60NF10 mosfet STP60NF10 mosfet morocco
Contextual Info: STP60NF10 N-CHANNEL 100V - 0.019 W - 80A TO-220 STripFET II POWER MOSFET Uhiyrà ÃBrr…hyÃArh‡ˆ…r† VDSS TYPE STP60NF10 • ■ ■ 100 V Avtˆ…rà )Package RDS on) < 0.023 W ID 80 A TYPICAL RDS(on) = 0.019 W EXTREMELY HIGHL dv/dt CAPABILITY 100% AVALANCHE TESTED

P60NF03

Abstract: P60NF p60nf0 p60nf03l STP60NF03L
Contextual Info: STP60NF03L N-channel 30V - 0.008Ω - 60A TO-220 STripFET Power MOSFET General features • Type VDSS RDS on ID STP60NF03L 30V <0.01Ω 60A Low threshold drive Description 1 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"

60N55F3

Contextual Info: STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ

P60NF10

Abstract: P60NF
Contextual Info: STB60NF10 STB60NF10-1 - STP60NF10 N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STB60NF10 100V <0.023Ω 80A STB60NF10-1 100V <0.023Ω 80A STP60NF10 100V <0.023Ω 80A 3

60N55F3

Abstract: STI60N55F3 STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 60N55
Contextual Info: STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ

STP60N06FI

Abstract: STP60N06
Contextual Info: 7^237 G D M b S M b 212 « S G T H SGS-TffOMSON STP60N06 STP60N06FI N - CHANNEL EN H A N C EM EN T MODE PO W ER MOS TRA N SISTO R TYPE STP60N06 STP60N06FI . . . • . V dss R D S o n Id 60 V 60 V < 0.02 Q < 0.02 a 60 A 32 A TYPICAL RDs(on) = 0.017 a AVALANCHE RUGGED TECHNO LO GY

schematic diagram 48v UPS

Abstract: schematic diagram 48V telecom ups equivalent stp60nf06 STP60NF06 schematic diagram 24v UPS STP60NF *p60nf06
Contextual Info: STP60NF06 N-CHANNEL 60V - 0.014Ω - 60A TO-220 STripFET POWER MOSFET TYPE STP60NF06 • ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

P60ne

Abstract: P60NE0 P60NE03L-10 p60n P60NE03 STP60NE03L-10 P60NE03L-1
Contextual Info: STP60NE03L-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST P60NE03L-10 30 V < 0.010 Ω 60 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.007 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC

STP60

Abstract: stp60n06
Contextual Info: SGS-THOMSON £j ï ¡mora « STP60N05-16 STP60N06- 16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 dss 50 V 60 V . RDS on Id < 0 .0 1 6 Q. < 0 .0 1 6 Q. 60 A 60 A Q . . TYPICAL RDs(on) = 0.013 AVALANCHE RUGGED TECHNOLOGY

p60n

Contextual Info: STP60NE06-16 STP60NE06-16FP SGS-THOMSON !LiM iO S N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE V dss RüS on •d S T P 60 N E 06 -1 6 S T P 60 N E 06 -1 6FP 60 V 60 V < 0.0 16 £i < 0.0 16 a 60 A 35 A ■ TYPICAL RDS(on) = 0.013 Q

stp60n06

Contextual Info: SGS-THOMSON £ j ï ULKgraMOeS STP60N06 STP60N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP60N 06 STP60N 06FI V dss RDS on Id 60 V 60 V < 0.0 2 Q. < 0.0 2 Q. 60 A 32 A . Q . . TYPICAL RDs(on) = 0.017 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

STP60NE10

Abstract: STP60NE10FP
Contextual Info: STP60NE10 STP60NE10FP N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP60NE10 STP60NE10FP 100 V 100 V < 0.022 Ω < 0.022 Ω 60 A 30 A • ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY

STB60N55F3

Abstract: STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 275 L20
Contextual Info: STB60N55F3 - STD60N55F3 - STF60N55F3 STP60N55F3 - STU60N55F3 N-channel 55V - 6.5mΩ - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET Power MOSFET General features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ 80A 110W

STP60NE06-16FP

Abstract: STP60NE06-16/FP STP60NE06-16
Contextual Info: STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS on ID STP60NE06-16 STP60NE06-16FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60 A 35 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dV/dt CAPABILTY

STP60NF03L

Contextual Info: STP60NF03L N-CHANNEL 30V - 0.008Ω - 60A TO-220 STripFET POWER MOSFET TYPE STP60NF03L • ■ VDSS RDS on ID 30 V < 0.01 Ω 60 A TYPICAL RDS(on) = 0.008 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature

60n3l

Abstract: 60N3LH5 60N3 STD60N3LH5 STU60N3LH5 STP60N3LH5
Contextual Info: STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features • ■ Order codes VDSS RDS on max ID STD60N3LH5 30 V 0.008 Ω 48 A STP60N3LH5 30 V 0.0084 Ω 48 A STU60N3LH5

p60ne06

Abstract: P60NE0 P60ne Part Marking TO-220 STMicroelectronics STP60NE06-16 p60n STP60NE06 STP60NE06-16FP P60NE06FP
Contextual Info: STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP60NE06-16 60 V < 0.016 Ω 60 A STP60NE06-16FP 60 V < 0.016 Ω 35 A FEATURES SUMMARY

Contextual Info: STP60NE06L-16 N - CHANNEL 60V - 0.014 £2 - 60A - D^PAK "SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S T P 60N E 06L-1 6 60 V < 0 . 0 1 6 Q. 60 A . . TYPICAL Ros(on) =0.014 £2 AVALANCE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED