STP60N06FI Search Results

STP60N06FI

Abstract: STP60N06
Contextual Info: 7^237 G D M b S M b 212 « S G T H SGS-TffOMSON STP60N06 STP60N06FI N - CHANNEL EN H A N C EM EN T MODE PO W ER MOS TRA N SISTO R TYPE STP60N06 STP60N06FI . . . • . V dss R D S o n Id 60 V 60 V < 0.02 Q < 0.02 a 60 A 32 A TYPICAL RDs(on) = 0.017 a AVALANCHE RUGGED TECHNO LO GY

stp60n06

Contextual Info: SGS-THOMSON £ j ï ULKgraMOeS STP60N06 STP60N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP60N 06 STP60N 06FI V dss RDS on Id 60 V 60 V < 0.0 2 Q. < 0.0 2 Q. 60 A 32 A . Q . . TYPICAL RDs(on) = 0.017 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

STP60N06

Abstract: STP60N06FI
Contextual Info: STP60N06 STP60N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N06 STP60N06FI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.02 Ω < 0.02 Ω 60 A 32 A TYPICAL RDS(on) = 0.017 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: STP60N06FI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)32# I(DM) Max. (A) Pulsed I(D)22 @Temp (øC)100# IDM Max (@25øC Amb)240 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45# Minimum Operating Temp (øC)

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

ste30na50

Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
Contextual Info: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

STP3N60FI

Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
Contextual Info: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L