SI2366DS Search Results
SI2366DS Price and Stock
Vishay Siliconix SI2366DS-T1-GE3MOSFET N-CH 30V 5.8A SOT23-3 |
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SI2366DS-T1-GE3 | Cut Tape | 9,952 | 1 |
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SI2366DS-T1-GE3 | Bulk | 3,000 |
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Vishay Siliconix SI2366DS-T1-BE3N-CHANNEL 30-V (D-S) MOSFET |
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SI2366DS-T1-BE3 | Cut Tape | 7,697 | 1 |
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Vishay Intertechnologies SI2366DS-T1-BE3N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2366DS-T1-BE3) |
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SI2366DS-T1-BE3 | Reel | 15 Weeks | 3,000 |
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SI2366DS-T1-BE3 | 55,336 |
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SI2366DS-T1-BE3 | Bulk | 3,000 |
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SI2366DS-T1-BE3 | Reel | 6,000 | 3,000 |
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Vishay Intertechnologies SI2366DS-T1-GE3N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2366DS-T1-GE3) |
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SI2366DS-T1-GE3 | Reel | 12 Weeks | 3,000 |
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SI2366DS-T1-GE3 | 9,490 |
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SI2366DS-T1-GE3 | 3,000 | 3,000 |
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SI2366DS-T1-GE3 | 3,000 | 12 Weeks | 3,000 |
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SI2366DS-T1-GE3 | Reel | 3,000 |
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SI2366DS-T1-GE3 | Reel | 3,000 |
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SI2366DS-T1-GE3 | 1 |
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SI2366DS-T1-GE3 | 13 Weeks | 3,000 |
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SI2366DS-T1-GE3 | 16,537 |
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SI2366DS Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SI2366DS-T1-BE3 | Vishay Siliconix | N-CHANNEL 30-V (D-S) MOSFET | Original | 243.84KB | 10 | |||
SI2366DS-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 5.8A SOT-23 | Original | 10 |
SI2366DS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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si2366Contextual Info: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si2366DS AN609, J2523 4374u 1469m 9180m 0805u 5327u 7530m 0215u si2366 | |
Contextual Info: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI2366DSContextual Info: SPICE Device Model Si2366DS Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si2366DS 11-Mar-11 | |
Marking code H6Contextual Info: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 11-Mar-11 Marking code H6 | |
Marking code H6
Abstract: si2366 si23
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Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Marking code H6 si2366 si23 | |
Contextual Info: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si2366DS www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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Si2366DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |