SI23 Search Results
SI23 Datasheets (382)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2300 | Kexin | N-Channel Enhancement Mode MOSFET | Original | 45.53KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2300 | TY Semiconductor | TY Equivalent - N-Channel Enhancement Mode MOSFET - SOT-23 | Original | 98.78KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2300A | UMW | 20V 6A 25MR@4.5V,6A 1V@50A N CHA | Original | 730.31KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2300DS-T1-BE3 | Vishay Siliconix | N-CHANNEL 30-V (D-S) MOSFET | Original | 122.8KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2300DS-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.6A SOT-23 | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2300-TP |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL,MOSFETS,SOT-23 PACKAGE | Original | 655.18KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301-3A | Unknown | MOSFET SOT-23 P Channel 20V | Original | 1.26MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301A | UMW | 20V 2.8A 400MW 142MR@2.5V,2A 1V@ | Original | 786.33KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301ADS | Vishay Intertechnology | P-Channel 2.5-V (G-S) MOSFET | Original | 37.05KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301ADS | Vishay Telefunken | V(ds): -20V V(gs): ±8V P-channel 2.5-V (G-S) MOSFET | Original | 37.06KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301ADS-E3 |
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Transistor Mosfet P-CH 20V 1.75A 3TO-236 | Original | 37.05KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301ADS-T1 |
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Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL | Original | 37.05KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301ADS-T1-E3 |
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Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL | Original | 37.05KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301AHE3-TP |
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Interface | Original | 1.07MB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2301A-TP |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL,MOSFETS,SOT-23 PACKAGE | Original | 433.56KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301BD | Vishay Siliconix | P-Channel 2.5-V (G-S) MOSFET | Original | 57.42KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301BDS | Vishay Siliconix | P-Channel 2.5-V (G-S) MOSFET | Original | 57.42KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301BDS-E3 |
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Transistor Mosfet P-CH 20V 2.2A 3TO-236 | Original | 59.86KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301BDS SPICE Device Model |
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P-Channel 2.5-V (G-S) MOSFET | Original | 240.28KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301BDST1 |
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MOSFET,P CHAN,2.5V,SOT23 | Original | 72.85KB | 6 |
SI23 Price and Stock
Micro Commercial Components SI2333-TPMOSFET P-CH 12V 6A SOT23 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2333-TP | Cut Tape | 10,031 | 1 |
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SI2333-TP | Cut Tape | 1,470 | 5 |
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SI2333-TP | 750 | 5 |
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SI2333-TP | 1,713,909 |
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Vishay Siliconix SI2300DS-T1-BE3N-CHANNEL 30-V (D-S) MOSFET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2300DS-T1-BE3 | Cut Tape | 7,103 | 1 |
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Vishay Siliconix SI2337DS-T1-E3MOSFET P-CH 80V 2.2A SOT23-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2337DS-T1-E3 | Reel | 6,000 | 3,000 |
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SI2337DS-T1-E3 | Bulk | 1,530 | 3 Weeks | 1 |
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SI2337DS-T1-E3 | 6,000 | 1 |
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Vishay Siliconix SI2307BDS-T1-GE3MOSFET P-CH 30V 2.5A SOT23-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2307BDS-T1-GE3 | Cut Tape | 4,149 | 1 |
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Vishay Siliconix SI2365EDS-T1-BE3P-CHANNEL 20-V (D-S) MOSFET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2365EDS-T1-BE3 | Cut Tape | 2,404 | 1 |
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SI23 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MOSFET SOT-23 marking code M2Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC MOSFET SOT-23 marking code M2 | |
si2366Contextual Info: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si2366DS AN609, J2523 4374u 1469m 9180m 0805u 5327u 7530m 0215u si2366 | |
marking L4 mosfet sot23
Abstract: SI2304
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Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking L4 mosfet sot23 SI2304 | |
si2301Contextual Info: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC | |
Si2303CDSContextual Info: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET |
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Si2303CDS O-236 OT-23) Si2303CDS-T1-E3 Si2303CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
SI2333DS-T1-E3Contextual Info: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET |
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Si2333DS O-236 OT-23) Si2333DS-T1-E3 Si2333DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Si2315BDS-T1-E3Contextual Info: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS* |
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Si2315BDS O-236 OT-23) Si2315BDS-T1 Si2315BDS-T1-E3 Si2315BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC | |
SI2304DS marking code SOT-23
Abstract: A4* marking code A4 MARKING CODE
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OCR Scan |
2304DS O-236 OT-23) Si2304DS S-56945-- 23-Nov-98 SI2304DS marking code SOT-23 A4* marking code A4 MARKING CODE | |
TSS 6672-1Contextual Info: Si2319CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si2319CDS AN609, 26-May-10 TSS 6672-1 | |
si2301cds-t1-ge3Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3 |
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Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1 | |
Si2329DS
Abstract: si2329 si23
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Si2329DS 11-Mar-11 si2329 si23 | |
3V30V
Abstract: 51K3 e515
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V-40V 10MQ060N V-30V Si2319DS LT3518EUF 330mA 3V30V 51K3 e515 | |
si2329
Abstract: SI2329DS
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Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2329 | |
si2300 sot-23Contextual Info: Product specification KI2300 SI2300 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features VDS=20V,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 0.55 @VGS=2.5V,ID=4.0A +0.1 1.3-0.1 VDS=20V,RDS(ON)=60m +0.1 2.4-0.1 @VGS=4.5V,ID=5.0A 0.4 3 VDS=20V,RDS(ON)=40m 2 +0.1 0.95-0.1 |
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KI2300 SI2300) OT-23 si2300 sot-23 | |
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Si2303CDSContextual Info: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) |
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Si2303CDS O-236 OT-23) Si2303CDS-T1-E3 08-Apr-05 | |
Si2304BDS
Abstract: Si2304BDS-T1-E3
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Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11 | |
Si2333CDS
Abstract: Si2333CDS-T1-GE3 Si2333C
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Si2333CDS 2002/95/EC O-236 OT-23) Si2333CDS-T1-E3 Si2333CDS-T1-GE3 11-Mar-11 Si2333C | |
Si2309DS
Abstract: Si2309DS-T1
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Si2309DS O-236 OT-23) Si2309DS-T1 Si2309DS-T1-E3 Si2309DS-T1-GE3 11-Mar-11 | |
Si2302ADS
Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2A MARKING CODE
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Si2302ADS 2002/95/EC O-236 OT-23) Si2302ADS-T1-E3 Si2302ADS-T1-GE3 11-Mar-11 2A MARKING CODE | |
Si2301
Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
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Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 08-Apr-05 | |
Si2307CDSContextual Info: New Product Si2307CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, b 0.088 at VGS = - 10 V - 2.7 0.138 at VGS = - 4.5 V - 2.2 VDS (V) - 30 Qg (Typ.) APPLICATIONS COMPLIANT • Load Switch for Portable Devices |
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Si2307CDS O-236 OT-23) Si2307CDS-T1-E3 Si2307CDS-T1-GE3 11-Mar-11 | |
Contextual Info: Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) d 0.033 at VGS = 10 V 5.3 0.038 at VGS = 6 V 4.9 0.043 at VGS = 4.5 V 4.6 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested |
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Si2372DS OT-23 O-236) Si2372DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si2377EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC |
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Si2377EDS 2002/95/EC O-236 OT-23) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: Si2302DDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) Max. ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si2302DDS 2002/95/EC O-236 OT-23) Si2302DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A |