SI4822DY Search Results

Si4822DY

Contextual Info: SPICE Device Model Si4822DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4822DY

Abstract: Si4822D
Contextual Info: Si4822DY Vishay Siliconix N-Channel Reduced Qg, Fast Swithcing MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V "12.0 0.015 @ VGS = 4.5 V "9.9 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: VISHAY _ Si4822DY Siliconix ▼ N-Channel Reduced Qg, Fast Switching MOSFET New Product PRODUCT SUM M ARY V ds V r DS(ON) 30 I d (A) (-2) 0.010 @ VGS = 10 V ±12.0 0.015 @ VGS = 4.5 V ±9.9 D Q SO-8 o s Top View N-Channel MOSFET

Contextual Info: January 2001 Si4822DY Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

Si4822DY

Contextual Info: SPICE Device Model Si4822DY N-Channel 30-V D-S Rated MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

AN609

Abstract: Si4822DY 74608
Contextual Info: Si4822DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4822DY

Contextual Info: SPICE Device Model Si4822DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

ws47

Contextual Info: Si4822DY Vishay Siliconix N-Channel Reduced Qg, Fast Swithcing MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V "12.0 0.015 @ VGS = 4.5 V "9.9 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4822DY

Abstract: SOIC-16
Contextual Info: January 2001 Si4822DY Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

Si4822DY

Contextual Info: SPICE Device Model Si4822DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4822DY Vishay Siliconix N-Channel Reduced Qg, Fast Swithcing MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V "12.0 0.015 @ VGS = 4.5 V "9.9 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

SDCFB

Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

Contextual Info: SÌ4822DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product P R O D U C T 55U M M A R Y vos on 30 *D t O W (Q) lo (A ) 0 010 @ V G S= 10 V ± 1 2 .0 0.015 @ V q S ss 4.5 V ± 9 .9 Q SO-8 [X □ *~8~| e : S (X GI 4 ~6~| D , 0 -

STM9435

Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
Contextual Info: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

P-Channel TrenchFET Power MOSFET SOT-23

Abstract: TP0101T equivalent P-CHANNEL POWER MOSFET SO-8 TN0201T DUAL P- MOSFET SO-8
Contextual Info: Siliconix Vishay MOSFETs and Standard Products Visit Vishay’s Website at www.vishay.com LITTLE FOOT Power MOSFETs P-Channel MOSFETs ® LITTLE FOOT power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

semiconductor cross reference

Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
Contextual Info: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

HTGB

Abstract: FDS*35A FDS*6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912
Contextual Info: Date Created: 1/23/2004 Date Issued: 2/13/2004 PCN # 20040403 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will

fqp60n06

Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL

0858T

Abstract: VP0610T siliconix catalog dual j-fet MMBFJ176
Contextual Info: Siliconix Vishay MOSFETs and Standard Products Visit VishayÕs Website at www.vishay.com LITTLE FOOT¨ Power MOSFETs P-Channel MOSFETs LITTLE FOOT ¨ power MOSFETs are being designed into computer and computer peripheral products, telecom systems, automotive air bags, and numerous other