SI4866 Search Results

Si4866DY

Abstract: Si4866DY-T1-E3
Contextual Info: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs

Contextual Info: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available

Si4866BDY

Abstract: 71342
Contextual Info: New Product Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 VDS (V) 12 Qg (Typ) 29.5 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

v5401

Abstract: Si4866BDY
Contextual Info: SPICE Device Model Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4866BDY

Contextual Info: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available

dh 321

Abstract: ceramic capacitor capacitor 1000uf 12v capacitor 1000uf -36v bat54 EMK107BJ104MA MAX1954A bat 54 1R2 DIODE u1 321
Contextual Info: 3V to 3.6V VIN D1 BAT-54 C3 10uF 6V X5R 5 IN BST R1 68k C1 1.8nF 1 HSD 2 COMP U1 MAX1954A C2 180pF DH C5 820uF 6V MB-EXR 10 8 C6 22uF 6V L1 N1 X5R 1.2uH Si4866DY CDEP105-H C4 0.1uF 9 1.2V@7A VOUT LX DL PGND 4 GND FB 6 N2 Si4866DY 7 3 R2 5.11k R4 2.7 C8 1000uF

Contextual Info: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs

Contextual Info: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs

Contextual Info: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available

Contextual Info: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available

Contextual Info: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 VDS (V) 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available

71719

Abstract: Si4866DY S-60245 17A67
Contextual Info: SPICE Device Model Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4866DY

Abstract: SI4866DY-T1-E3
Contextual Info: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs

Si4866BDY

Contextual Info: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available

4742

Abstract: AN609 Si4866BDY
Contextual Info: Si4866BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SPICE Device Model Si4866BDY www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D D D D PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V 14 TrenchFETr Power MOSFETS PWM Optimized for High Efficiency Low Output Voltage

Si4866DY

Contextual Info: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency D Low Output Voltage PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V

74393

Abstract: v5401 Si4866BDY 74393 datasheet v.5401 5401 DM
Contextual Info: SPICE Device Model Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

7361

Abstract: AN609 Si4866DY
Contextual Info: Si4866DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

71719

Abstract: Si4866DY
Contextual Info: SPICE Device Model Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4866DY-T1-E3

Abstract: Si4866BDY si4866 SI4866DY RG52
Contextual Info: Specification Comparison Vishay Siliconix Si4866BDY vs. Si4866DY Description: Package: Pin Out: N-Channel, 12-V D-S MOSFET SO-8 Identical Part Number Replacements Si4866BDY-T1-E3 Replaces Si4866DY-T1-E3 Si4866BDY-T1-E3 Replaces Si4866DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si4866DY

Contextual Info: Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D D D D PRODUCT SUMMARY VDS V 12 rDS(on) (W) ID (A) 0.0055 @ VGS = 4.5 V 17 0.008 @ VGS = 2.5 V 14 TrenchFETr Power MOSFETS PWM Optimized for High Efficiency Low Output Voltage

Contextual Info: New Product Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 rDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • • • • TrenchFET Power MOSFETS PWM Optimized for High Efficiency