SI4963DY Search Results

4963 MOSFET

Abstract: Si4963DY SI4963 marking 4963
Contextual Info: Si4963DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

3771

Abstract: AN609 Si4963DY
Contextual Info: Si4963DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4963DY

Contextual Info: Si4963DY Dual P-Channel, 2.5-V G–S Rated, MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET

Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V −5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant S1 Available

Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2

Si4963DY

Contextual Info: SPICE Device Model Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4963DY

Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V –6.2 0.050 @ VGS = –2.5 V –5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET

Si4963DY

Abstract: Si4963DY-T1
Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V −5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant S1 Available

Si4963DY-T1

Abstract: Si4963DY
Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V −5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant S1 Available

Si4963DY

Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V –6.2 0.050 @ VGS = –2.5 V –5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET

Si4963DY

Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G–S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2

Si4963BDY

Abstract: Si4963BDY-T1-E3 Si4963DY-T1 SI4963DY Si4963DY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4963BDY vs. Si4963DY Description: P-Channel, 2.5 V G-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4963BDY-T1-E3 Replaces Si4963DY-T1-E3 Si4963BDY-T1-E3 Replaces Si4963DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si4963DY

Abstract: SI4963
Contextual Info: Si4963DY Dual P-Channel 2.5-V G–S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET

4963 soic8

Abstract: 4963 MOSFET
Contextual Info: Si4963DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

kb3886

Abstract: NPN transistor c828 smd diode S6 58a 218S4EASA32HK SB400 LM13W SOT-26 F14 w27 smd transistor diode C940 ST ak7 SMD Transistor KB3886 B1
Contextual Info: 5 3 2 1 First International Computer,Inc Portable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : LM13 2. PCI & IRQ & DMA Description : Version : 0.3 3. Block Diagram : D C 4. Net name Description :

SDCFB

Abstract: sandisk SDTB-32 SDP3B SDTB-32 SMBJ15A SDCFB-32 semikron SK 300GB SDCFB-128 SDP3B-8-101
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

cmos 74C00 NAND

Abstract: 74C00 LTC1473 cmos 74C00 MMBD2838LTI 1812LS-105XKBC LTC1442 MMBD2838LT1 Si4936DY Si4963DY
Contextual Info: advertisement Dual PowerPathTM Controller Simplifies Power Management Design Note 160 Jaime Tseng As the demand for portable electronics with multiple batteries continues to grow, so does the need for simple and efficient solutions for switching between batteries. The

IRF7205

Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

top mark smd A12 5PIN

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A transistor npn c882 zener diode c531 FAIRCHILD AA32 smd diode zener DIODE D49 ALPHA&OMEGA DATE CODE U261 intel g31 motherboard CN17-4
Contextual Info: 5 3 2 1 First International Computer,Inc Portable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : DPUA 2. PCI & IRQ & DMA Description : Version : 0.3 3. Block Diagram : D C 4. Nat name Description :

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509