SI4963 Search Results

4963 MOSFET

Abstract: Si4963DY SI4963 marking 4963
Contextual Info: Si4963DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

3771

Abstract: AN609 Si4963DY
Contextual Info: Si4963DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4963DY

Contextual Info: Si4963DY Dual P-Channel, 2.5-V G–S Rated, MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET

Contextual Info: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V −5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant S1 Available

Si4963BDY

Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application

Contextual Info: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2

40235

Abstract: Si4963BDY Si4963BDY-T1
Contextual Info: Si4963BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −6.5 0.050 @ VGS = −2.5 V −5.2 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4963BDY—E3 (Lead Free)

Si4963DY

Contextual Info: SPICE Device Model Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4963DY

Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V –6.2 0.050 @ VGS = –2.5 V –5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET

Si4963BDY

Contextual Info: SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

40235

Abstract: Si4963BDY Si4963BDY-T1
Contextual Info: Si4963BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −6.5 0.050 @ VGS = −2.5 V −5.2 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4963BDY—E3 (Lead Free)

Si4963BDY

Abstract: Si4963BDY-T1-E3 Si4963BDY-T1-GE3 SI4963
Contextual Info: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

T0252AA

Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y

Si4963DY-T1

Abstract: Si4963DY
Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V −5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant S1 Available

Si4963BDY

Abstract: Si4963BDY-T1-E3 Si4963BDY-T1-GE3
Contextual Info: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Si4963DY

Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V –6.2 0.050 @ VGS = –2.5 V –5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET

Contextual Info: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/96/EC

Si4963BDY

Abstract: mosfet Vds 30 Vgs 25
Contextual Info: SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4963DY

Contextual Info: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G–S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2

Si4963BDY

Abstract: Si4963BDY-T1-E3 Si4963DY-T1 SI4963DY Si4963DY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4963BDY vs. Si4963DY Description: P-Channel, 2.5 V G-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4963BDY-T1-E3 Replaces Si4963DY-T1-E3 Si4963BDY-T1-E3 Replaces Si4963DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si4963DY

Abstract: SI4963
Contextual Info: Si4963DY Dual P-Channel 2.5-V G–S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET