Si5449DC
Abstract: No abstract text available
Text: SPICE Device Model Si5449DC P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse
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Si5449DC
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1.6562
Abstract: 7482 4717 AN609 Si5449DC
Text: Si5449DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5449DC
AN609
20-Jun-07
1.6562
7482
4717
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Untitled
Abstract: No abstract text available
Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.085 @ VGS = -4.5 V -4.3 0.135 @ VGS = -2.5 V -3.4 S 1206-8 ChipFETt t 1 D D G D D D D Marking Code G BH XX S Lot Traceability and Date Code Part #
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Si5449DC
Si5449DC-T1
18-Jul-08
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Si5449DC
Abstract: No abstract text available
Text: SPICE Device Model Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5449DC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.085 @ VGS = -4.5 V -4.3 0.135 @ VGS = -2.5 V -3.4 S 1206-8 ChipFETt t 1 D D G D D D D Marking Code G BH XX S Lot Traceability and Date Code Part #
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Si5449DC
Si5449DC-T1
08-Apr-05
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Si5449DC
Abstract: No abstract text available
Text: SPICE Device Model Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5449DC
S-52526Rev.
12-Dec-05
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Si5449DC
Abstract: No abstract text available
Text: SPICE Device Model Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5449DC
13-Apr-01
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S0233
Abstract: Si5449DC S-02333
Text: Si5449DC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –4.3 0.135 @ VGS = –2.5 V –3.4 –30 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BH XX Lot Traceability and Date Code
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Si5449DC
S-02333--Rev.
23-Oct-00
S0233
S-02333
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AN811
Abstract: si5449dc-t1-e3 si5449dc-t1-ge3
Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 4.3 0.135 at VGS = - 2.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated
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Si5449DC
Si5449DC-T1-E3
Si5449DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
AN811
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Untitled
Abstract: No abstract text available
Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 4.3 0.135 at VGS = - 2.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated
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Si5449DC
Si5449DC-T1-E3
Si5449DC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si5449DC
Abstract: si5449dc-t1-ge3
Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 4.3 0.135 at VGS = - 2.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated
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Si5449DC
Si5449DC-T1-E3
Si5449DC-T1-GE3
18-Jul-08
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Si5449DC
Abstract: Si5449DC-T1
Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.085 @ VGS = -4.5 V -4.3 0.135 @ VGS = -2.5 V -3.4 S 1206-8 ChipFETt t 1 D D G D D D D Marking Code G BH XX S Lot Traceability and Date Code Part #
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Si5449DC
Si5449DC-T1
S-21251--Rev.
05-Aug-02
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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