SI5449DC Search Results
SI5449DC Price and Stock
Vishay Siliconix SI5449DC-T1-E3MOSFET P-CH 30V 3.1A 1206-8 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SI5449DC-T1-E3 | Reel | 3,000 |
|
Buy Now |
SI5449DC Datasheets (8)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
---|---|---|---|---|---|---|
Si5449DC | Vishay Intertechnology | P-Channel 30-V (D-S) MOSFET | Original | |||
SI5449DC | Vishay Siliconix | P-Channel 30-V (D-S) MOSFET | Original | |||
SI5449DC | Vishay Siliconix | MOSFETs | Original | |||
Si5449DC SPICE Device Model |
![]() |
P-Channel 30-V (D-S) MOSFET | Original | |||
SI5449DC-T1 | Vishay Intertechnology | P-Channel 30-V (D-S) MOSFET | Original | |||
SI5449DC-T1 | Vishay Siliconix | P-Channel 30-V (D-S) MOSFET | Original | |||
SI5449DC-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 3.1A 1206-8 | Original | |||
SI5449DC-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 3.1A 1206-8 | Original |
SI5449DC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Si5449DCContextual Info: SPICE Device Model Si5449DC P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse |
Original |
Si5449DC | |
1.6562
Abstract: 7482 4717 AN609 Si5449DC
|
Original |
Si5449DC AN609 20-Jun-07 1.6562 7482 4717 | |
Contextual Info: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.085 @ VGS = -4.5 V -4.3 0.135 @ VGS = -2.5 V -3.4 S 1206-8 ChipFETt t 1 D D G D D D D Marking Code G BH XX S Lot Traceability and Date Code Part # |
Original |
Si5449DC Si5449DC-T1 18-Jul-08 | |
Si5449DCContextual Info: SPICE Device Model Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si5449DC 18-Jul-08 | |
Contextual Info: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.085 @ VGS = -4.5 V -4.3 0.135 @ VGS = -2.5 V -3.4 S 1206-8 ChipFETt t 1 D D G D D D D Marking Code G BH XX S Lot Traceability and Date Code Part # |
Original |
Si5449DC Si5449DC-T1 08-Apr-05 | |
Si5449DCContextual Info: SPICE Device Model Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si5449DC S-52526Rev. 12-Dec-05 | |
Si5449DCContextual Info: SPICE Device Model Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si5449DC 13-Apr-01 | |
S0233
Abstract: Si5449DC S-02333
|
Original |
Si5449DC S-02333--Rev. 23-Oct-00 S0233 S-02333 | |
AN811
Abstract: si5449dc-t1-e3 si5449dc-t1-ge3
|
Original |
Si5449DC Si5449DC-T1-E3 Si5449DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN811 | |
Contextual Info: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 4.3 0.135 at VGS = - 2.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated |
Original |
Si5449DC Si5449DC-T1-E3 Si5449DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si5449DC
Abstract: si5449dc-t1-ge3
|
Original |
Si5449DC Si5449DC-T1-E3 Si5449DC-T1-GE3 18-Jul-08 | |
Si5449DC
Abstract: Si5449DC-T1
|
Original |
Si5449DC Si5449DC-T1 S-21251--Rev. 05-Aug-02 | |
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
|
Original |
Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 | |
GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
|
Original |
Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 |