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    Vishay Siliconix SI5449DC-T1-E3

    MOSFET P-CH 30V 3.1A 1206-8
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    DigiKey SI5449DC-T1-E3 Reel 3,000
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    SI5449DC Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si5449DC Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI5449DC Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI5449DC Vishay Siliconix MOSFETs Original PDF
    Si5449DC SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI5449DC-T1 Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI5449DC-T1 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI5449DC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 3.1A 1206-8 Original PDF
    SI5449DC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 3.1A 1206-8 Original PDF

    SI5449DC Datasheets Context Search

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    Si5449DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5449DC P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si5449DC

    1.6562

    Abstract: 7482 4717 AN609 Si5449DC
    Text: Si5449DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5449DC AN609 20-Jun-07 1.6562 7482 4717

    Untitled

    Abstract: No abstract text available
    Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.085 @ VGS = -4.5 V -4.3 0.135 @ VGS = -2.5 V -3.4 S 1206-8 ChipFETt t 1 D D G D D D D Marking Code G BH XX S Lot Traceability and Date Code Part #


    Original     		PDF Si5449DC Si5449DC-T1 18-Jul-08

    Si5449DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5449DC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.085 @ VGS = -4.5 V -4.3 0.135 @ VGS = -2.5 V -3.4 S 1206-8 ChipFETt t 1 D D G D D D D Marking Code G BH XX S Lot Traceability and Date Code Part #


    Original     		PDF Si5449DC Si5449DC-T1 08-Apr-05

    Si5449DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5449DC S-52526Rev. 12-Dec-05

    Si5449DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5449DC 13-Apr-01

    S0233

    Abstract: Si5449DC S-02333
    Text: Si5449DC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –4.3 0.135 @ VGS = –2.5 V –3.4 –30 S 1206-8 ChipFET 1 D D G D D D D Marking Code G BH XX Lot Traceability and Date Code


    Original     		PDF Si5449DC S-02333--Rev. 23-Oct-00 S0233 S-02333

    AN811

    Abstract: si5449dc-t1-e3 si5449dc-t1-ge3
    Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 4.3 0.135 at VGS = - 2.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si5449DC Si5449DC-T1-E3 Si5449DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN811

    Untitled

    Abstract: No abstract text available
    Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 4.3 0.135 at VGS = - 2.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si5449DC Si5449DC-T1-E3 Si5449DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5449DC

    Abstract: si5449dc-t1-ge3
    Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 4.3 0.135 at VGS = - 2.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si5449DC Si5449DC-T1-E3 Si5449DC-T1-GE3 18-Jul-08

    Si5449DC

    Abstract: Si5449DC-T1
    Text: Si5449DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.085 @ VGS = -4.5 V -4.3 0.135 @ VGS = -2.5 V -3.4 S 1206-8 ChipFETt t 1 D D G D D D D Marking Code G BH XX S Lot Traceability and Date Code Part #


    Original     		PDF Si5449DC Si5449DC-T1 S-21251--Rev. 05-Aug-02

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8