T0254AA Search Results

T0254AA

Contextual Info: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low

T0-254AA

Contextual Info: Case Outline and Dimensions - T0-254AA Standard & Low Ohmic 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 3 17.40 [.685] 16.89 [.665]

Contextual Info: International I@ R Rectifier Provisional Data Sheet No. PD-9.1223B REPETITIVE AVALANCHE AND dv/dt RATED IRHM7450SE HEXFET TRAN SISTO R N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D Product Summary 500 Volt, 0.51», (SEE) RAD HARD HEXFET

Contextual Info: SEMTECH CORP 5ÔE ]> • 013113*1 DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE 0003011 Ô36 SM8S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,

Contextual Info: SflE » SEMTECH CORP • 6 1 3 ^ 1 3 ^ 0 0 0 3 0 H 3 Bbl « S E T DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE SM3S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,

IRHM9250

Abstract: IRHM93250 JANSF2N7423 JANSR2N7423
Contextual Info: PD - 91299C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9250 100K Rads (Si) IRHM93250 300K Rads (Si) RDS(on) I D

Contextual Info: PD - 90713E IRHM7230 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7230 100K Rads (Si) IRHM3230 300K Rads (Si) IRHM4230 600K Rads (Si) IRHM8230 1000K Rads (Si)

Contextual Info: PD-91299E IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)

Contextual Info: h is s e ma i c or n dr u c t o r FSF450D, FSF450R " " m y m a m w m m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 9A, 500V, Tqs ^o N = 0.600ÎÎ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

50n06

Contextual Info: OM60N06SA OM60N05SA OM50N06ST OM50N06SA QM50N05SA QM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages

Contextual Info: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

H188

Contextual Info: Data Sheet No. PD-9.887 I«R INTERNATIONAL RECTIFIER AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTORS IRHM7054 IRHM8054 Z N-CHANNEL MEGA RAD HARO Product Summary 60 Volt, 0.027», MEGA RAD HARD HEXFET International Rectifier's M E G A RAD H A R D Technology HEXFETs

Contextual Info: JANSR2N7298 Formerly FRF450R4 Semiconductor Data Sheet Radiation Hardened, N-Channel Power MOSFET The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings

IRFG1Z0

Abstract: irfh25 irfg9110 IRFH150
Contextual Info: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15

IRH250

Abstract: TO-254AA Package IRHF130 IRHF230 hexfets IRHM450 IRHM150 IRHG110
Contextual Info: RADIATION HARD HEXFETs — INTERNATIONAL RECTIFIER 2bE INTERNATIONAL RECTIFIER IT O R D 4ÔSS4S2 GOlDSbö 1 T-3Ì-Ò3 • RADIATION HARD HEXFETS N-CHANNEL Types Vos V 1q com R d s io n max) TC - 25°C 'dm pulsed Pd max n A A W Bulletin Case Style SMD-1

JANSR2N7432

Abstract: IRHM3160 IRHM4160 IRHM7160 IRHM8160
Contextual Info: PD-91331E IRHM7160 JANSR2N7432 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA REF: MIL-PRF-19500/663 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7160 IRHM3160 IRHM4160 IRHM8160 Radiation Level 100K Rads (Si) 300K Rads (Si)

Contextual Info: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

Contextual Info: SENTECH CORP SflE D • A I B T ^ SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE □□□3011 547 SM8U22* SM8U42* SM8U52* SM8U62* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,

T0254AA

Abstract: T0257AA
Contextual Info: sôe d SEMTECH CORP m 000301S n s DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE «SET SM1S41 * SM1S01 * These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryilia substrates ensures the lowest possible thermal impedance,

IRHM3260

Abstract: IRHM4260 IRHM7260 IRHM8260
Contextual Info: PD - 91332D IRHM7260 JANSR2N7433 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA REF: MIL-PRF-19500/663 RAD Hard HEXFET TECHNOLOGY ™ Product Summary Part Number IRHM7260 IRHM3260 IRHM4260 IRHM8260 Radiation Level R DS(on) 100K Rads (Si) 0.070Ω

IRFM040

Abstract: IRFM050 IRFM460 4B4 RECTIFIER IRFM9130 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340
Contextual Info: HIGH-REL HEXFETs I N T E R N A T I O N A L R E C T I F I E R r io R ~ I NT ERN ATIO NAL RECTIFIER 2LE D • 4fi5S452 ODIOSbb fl ■ M-pak — TO-254AA Isolated Package N-CHANNEL Types Vos V if IRFM050 IRFM040 RDS(0N1 1q com >DM PD (max) Tc - 25°C pulsed

Contextual Info: G o v e rn m e n t • ‘,a5S1,;’2 o o i b i ? 3 Mm H I M * S o ac e Pro d u cts INTERNATIONAL RECTIFIER u p a i f G i IU U U U IO O th e r Products bSE » Fro m IR S c h o ttk y — H ig h Reliability/Mil Qualified Pari Number VRRM lF AV @ Tc Vf M >FM

Contextual Info: JANSR2N7404 33 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 15A, -200V, ros ON = 0-290Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: PD - 90707D IRHM7130 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7130 100K Rads (Si) IRHM3130 300K Rads (Si) IRHM4130 600K Rads (Si) IRHM8130 1000K Rads (Si)