T0258AA Search Results

Contextual Info: SflE » SEMTECH CORP • 6 1 3 ^ 1 3 ^ 0 0 0 3 0 H 3 Bbl « S E T DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE SM3S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,

JB35

Abstract: Dual Schottky Rectifiers
Contextual Info: SM3S42* DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryitia substrates ensures the lowest possible thermal impedance, thereby decreasing losses and providing increased efficiency. Typical applications include

Contextual Info: SEMTECH CORP 5ÔE ]> • 013113*1 DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE 0003011 Ô36 SM8S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­

60HQ100

Abstract: JANTX1N6392
Contextual Info: International Government and Space liQ R lR e c t i f i e r Schottky Diode Hermetic Packages 8-60 Amps Case Part Number VRRM V 'F(AV) @ (A) Tc •f (AV) @ t c VFM @ >FM 25°C(V) (C) Outline !r M @ v RWM 25°C(mA) Max. Tj Number (1) 5EQ100 8EQ045 100 45 8

dual diode TO254AA 600V

Contextual Info: OM 1N100SA OM 5N100SA OM1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package

Contextual Info: SEMTECH CORP SfiE D 6 1 3 ^ 1 3 ^ 0 D 03003 470 DUAL POWER MOSFET’s IN HERMETIC 6 PIN ISOLATED PACKAGE SET SM6F151* SM6F251* SM6F351* SM6F451* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

Contextual Info: SENTECH CORP SflE D • A I B T ^ SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE □□□3011 547 SM8U22* SM8U42* SM8U52* SM8U62* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,

T0254AA

Abstract: T0257AA
Contextual Info: sôe d SEMTECH CORP m 000301S n s DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE «SET SM1S41 * SM1S01 * These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryilia substrates ensures the lowest possible thermal impedance,

Contextual Info: G o v e rn m e n t • ‘,a5S1,;’2 o o i b i ? 3 Mm H I M * S o ac e Pro d u cts INTERNATIONAL RECTIFIER u p a i f G i IU U U U IO O th e r Products bSE » Fro m IR S c h o ttk y — H ig h Reliability/Mil Qualified Pari Number VRRM lF AV @ Tc Vf M >FM

JANTX2N7334

Abstract: irfy430
Contextual Info: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6

Contextual Info: Other Products from IR _^ Government and Space Schottky Diode Hermetic Package 8 - 60 Amps _ Case Part Number Outline Max. Tj Number Vr r m V >F(AV)@ t C (A) 'F(AV) @ Tc (C) VFM @ >FM 25°C(V) 5EQ100 8EQ045 100 45 8 10 100 100 0.80 0.65 5 5

1061S

Abstract: L905
Contextual Info: SEMTECH C0RP 5fiE D • fllBTlBT ODDBT?! Eb2 ■ SET ADJUSTABLE POSITIVE VOLTAGE REGULATOR IN HERMETIC ISOLATED T0257AA PACKAGE SM1R41 A* This device is a three terminal adjustable positive voltage re g u la to r, requiring only two external resistors to set up the output voltage. Inherent in this device are all of the

Contextual Info: SEMTECH CORP 34E ]> • 0G02323 014 « S E T SINGLE MOSFETS PART# BVdss V Ros (on) (Q) lo CONTINUOUS (A@TC = 25°C) r -„ , I - 3> °1 - \ Idm CURRENT (A) pu lse PD MAX (W) CASE STYLE DUAL MOSFETS IN 6 PIN PACKAGE (RATINGS PER MOSFET) PART# BV d s s (V)

Contextual Info: SEMTECH CORP 34E D • 0002324 TSÜ DUAL ULTRAFAST RECTIFIERS PA RT# Vr w m V If (av ) trr Vf (A@ Tc = 25°C) (ns) (V @ 25 °C) -,~'3»cl-0iO C A S E STYLE SM3U62*SU SM3U42*SU SM 3U22*SU SM 3U52‘SU SM .iU>?*Slj 600 400 200 150 100 30 50 1 2 5 m 15A 30

T0254AA

Contextual Info: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low

T0257AA

Abstract: schottky 8a A15A T0-257AA SM1R31BSU 10A Positive Adjustable 8A Positive Adjustable
Contextual Info: SEMTECH CORP 34E D • 0002324 TSÜ DUAL ULTRAFAST RECTIFIERS PA RT# Vr w m V If (av ) trr Vf (A@ Tc = 25°C) (ns) (V @ 25 °C) -, ~ '3 » c l - 0i O C A S E STYLE SM3U62*SU SM3U42*SU SM 3U22*SU SM 3U52‘SU SM .iU>?*Slj 600 400 200 150 100 30 50 1 2 5 m 15A

Contextual Info: O M 1N 100S A O M 5N 100S A O M 1N 100S T OM3N1QOSA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • Isolated Hermetic Metal Package Fast Switching • • •

Contextual Info: Government and Space Other Products from IR HEXFRED Diodes Hermetic Packages 7 - 45 Amps Part VRWM Number fF AV @ TC (A) Typ Typ Case *F(AV)@TC v f m @ ! f m *R M @ VRWM RthJC (RRM 25°c(mA) 25°C (V) (°K/W) (A) (C) Trr Outline (nS) Number HFA40HF60 600

solitron rectifier

Abstract: SOLITRON Voltage Regulator SDF450JAAXHSN T0-257AA IN 5008 DIODE
Contextual Info: PART NUMBERING SYSTEM EXAMPLE: SDF450JAAXHSN F SOLITRON DEVICES DESIGNATION 450 JAA X H 5 N GATE-SOURCE ZENER U S D OH.Y FOR MOSFET = = * = = ELECTRICAL CHARACTERISTICS MOSFET IGBT RECTIFIER. ULTRA FAST RECTIFIER GENERAL PURPOSE RECTIFIER. SCHOTTKY VOLTAGE REGULATOR

Contextual Info: SENTECH C OR P SflE » • filBS lBS POWER MOSFET’s IN HERMETIC 12 PIN ISOLATED PACKAGE □ D 0 2 cm SM4F151S* SM4F351S* 341 SM4F251S* SM4F451S* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

FIL-3C

Abstract: to-92 mosfet 13T13
Contextual Info: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

Ig21

Contextual Info: International Government and Space ig b t HORlRecBfier Hermetic Packages 6 0 0 -1200V V BR CES Part Number (V) v GE(th) MIN (V) ic @ ic @ v GE(th) M AX TC = 25°C TC = 100°C (V) E t s TY P PD Max. Power Outline Tj = 125 Dissipation Number (m J) (A) IRGAC30F

Contextual Info: in te rn atio n a l Government and Space Products I ö R Rectifier h *0 Port Number R0S on} (fÎ 8V0SS W T f= 2 S <>C (A T >= JB6“C (A) @ ïf ~ 2 5 ° C (W) Fu on Demand Number Cose Outline Key Hermetic Packages HEXFET Power MOSFETs TO-205AF (TO-39) N-Channel