TIME600N Search Results
TIME600N Datasheets Context Search
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Contextual Info: ERC09-13 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage1.3k t(rr) Max.(s) Rev.Rec. Time600n @I(F) (A) (Test Condition)100m @I(R) (A) (Test Condition)100m V(FM) Max.(V) Forward Voltage1.5 |
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ERC09-13 Time600n Current50u | |
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Contextual Info: BY359-1500 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current6.5 V(RRM)(V) Rep.Pk.Rev. Voltage1.5k t(rr) Max.(s) Rev.Rec. Time600n @I(F) (A) (Test Condition)2 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.3 @I(FM) (A) (Test Condition)20 |
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BY359-1500 Time600n Current600u StyleTO-220AC | |
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Contextual Info: PTC920 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current50 V(RRM)(V) Rep.Pk.Rev. Voltage900 t(rr) Max.(s) Rev.Rec. Time600n @I(F) (A) (Test Condition)40 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)50 |
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PTC920 Current50 Voltage900 Time600n Current100u | |
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Contextual Info: ERG28-12 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage1.2k t(rr) Max.(s) Rev.Rec. Time600n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage3.0 @I(FM) (A) (Test Condition) |
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ERG28-12 Current30 Time600n Current10m | |
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Contextual Info: SCA14065 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)250 I(C) Max. (A)20 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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SCA14065 Freq40M time600n | |
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Contextual Info: 2N6678+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N6678 Freq15M time600n | |
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Contextual Info: 2N6676+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N6676 Freq15M time600n | |
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Contextual Info: OM8002SC Transistors N-Channel Enhancement MOSFET with Driver V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D)16 @Temp (øC)100 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 r(DS)on Max. (Ohms)95m |
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OM8002SC delay175n time600n Code6-75 NumberTR00600075 | |
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Contextual Info: 2N6678+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N6678 Freq15M time600n | |
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Contextual Info: EUT062S Transistors Bipolar Transistor Full Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)650 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.8.0 @I(C) (A) (Test Condition)15 |
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EUT062S time600n StyleTO-240 | |
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Contextual Info: 1743-1220 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)30 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq30M time600n | |
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Contextual Info: STC2180 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)75 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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STC2180 Freq20M time600n | |
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Contextual Info: 2N6674+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N6674 Freq15M time600n | |
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Contextual Info: 1748-1820 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80ö V(BR)CBO (V)190 I(C) Max. (A)20 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq30M time600n | |
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Contextual Info: 2N6047 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)20 Absolute Max. Power Diss. (W)114# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)20 |
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2N6047 Freq30M time600n | |
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Contextual Info: PTC10005 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400ö V(BR)CBO (V) I(C) Max. (A)20 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250u¶ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 |
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PTC10005 time600n | |
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Contextual Info: 2N5933 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)30 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)20 |
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2N5933 Freq30M time600n | |
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Contextual Info: 2N6678+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N6678 Freq15M time600n | |
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Contextual Info: IR5002 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)500 I(C) Max. (A)15 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 |
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IR5002 time600nà | |
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Contextual Info: PTC10002 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250u¶ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. |
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PTC10002 time600n | |
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Contextual Info: STC2185 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)100 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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STC2185 Freq20M time600n | |
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Contextual Info: STC2188 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)100 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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STC2188 Freq20M time600n | |
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Contextual Info: EUT062 Transistors Bipolar Transistor Full Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)650 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.8.0 @I(C) (A) (Test Condition)15 |
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EUT062 time600n StyleTO-240 | |
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Contextual Info: PTC10006 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250u¶ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 |
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PTC10006 time600n | |