upg 506
Abstract: No abstract text available
Text: UPG130GR UPG131GR L-BAND SPDT MMIC SWITCH FEATURES_ • HIGH OUTPUT POWER: 2 W att M inimum UPG130GR • LOW INSERTION LOSS: 0.6 dB Typical at 2.0 GHz • LOW CONTROL CURRENT: 50 |M Maximum • SMALL 8 PIN SOP PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
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UPG130GR
UPG131GR
UPG130GR)
1000/Reel
1000/Reel
UPG131GR
UPG130GR:
UPG131GR:
b42752S
upg 506
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saa 1068
Abstract: T 927 SAA 1006 saa 1070
Text: L-BAND SPDT MMIC SWITCH ^ G130GR UPG131GR FEATURES_ • HIGH OUTPUT POWER: 2 Watt Minimum UPG130GR • LOW INSERTION LOSS: 0.6 dB Typical at 2.0 GHz • LOW CONTROL CURRENT: 50 nA Maximum • SMALL 8 PIN SOP PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
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UPG130GR)
G130GR
UPG131GR
UPG130GR
UPG131GR
PG130G
R/UPG131GR
1000/Reel
1000/Reel
saa 1068
T 927
SAA 1006
saa 1070
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Untitled
Abstract: No abstract text available
Text: UPG130GR UPG131GR L-BAND SPDT MMIC SWITCH FEATURES • HIGH OUTPUT POWER: 2 Watt Minimum UPG130GR • LOW INSERTION LOSS: 0.6 dB Typical at 2.0 GHz . LOW CONTROL CURRENT: 50 nA Maximum • SMALL 8 PIN SOP PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE
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UPG130GR)
UPG130GR
UPG131GR
UPG131GR
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic
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UPG100B
UPG101B
UPG103B
UPG503B
UPG506B
UPG501P
UPG502P
UPG503P
UPG506P
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC GaAs INTEGRATED CIRCUIT /fPG132G L-BAND SPDT SWITCH DESCRIPTION /¿PG132G is an L-Band SPDT Single Pole D oubleThrow GaAs FET switch w hich w as developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
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uPG132G
PG132G
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC GaAs INTEGRATED CIRCUIT /¿PG132G L-BAND SPDT SWITCH DESCRIPTION ¿¡PG132G is an L-Band SPDT Single Pole Double Throw GaAs FET switch w hich was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
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uPG132G
PG132G
VP15-00-2
WS60-00-1
10535EJ7V0IF00)
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