YG801C04 Search Results
YG801C04 Price and Stock
Fuji Electric Co Ltd YG801C04RF1195 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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YG801C04RF119 | 380 |
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Buy Now |
YG801C04 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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YG801C04 | High Voltage Power Systems | SCHOTTKY BARRIER DIODE | Original | 71.52KB | 4 | |||
YG801C04 | Fuji Electric | SCHOTTKY BARRIER DIODE | Scan | 71.52KB | 4 | |||
YG801C04 | Unknown | The Diode Data Book with Package Outlines 1993 | Scan | 75.12KB | 2 | |||
YG801C04R | Fuji Electric | Schottky Barrier Diode | Original | 43.91KB | 3 | |||
YG801C04R | Fuji Electric | SCHOTTKY BARRIER DIODE | Original | 46.65KB | 3 |
YG801C04 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: YG801C04I5A ’• O utlin e D ra w in g s 4-7 ma». SCHOTTKY BARRIER DIODE 10.5max. ¡¿ih 2.7 1.2 Til 2.54 Features 0.7 0.6 2.7 2.54 JEDEC Insulated package by fu lly m o ld in g . SC-67 EIAJ M &V f Low V f m m & m C o n n e c tio n D ia g ra m S u p e r hig h speed s w itc h in g . |
OCR Scan |
YG801C04I5A) SC-67 l95t/R89 Shl50 | |
T151
Abstract: TH25 A406
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OCR Scan |
YG801C0415A) SC-67 500ns, e3Te30S3% I95t/R89) T151 TH25 A406 | |
DIODE C04 06
Abstract: C04 06
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OCR Scan |
YG801C0415A) 500ns, YG801 DIODE C04 06 C04 06 | |
TC9010Contextual Info: YG801C04R 40V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 Low VF Super high speed switching. High reliability by planer design. 0.7±0.2 0.6 -0 |
Original |
YG801C04R O-22OF15) 13Min SC-67 500ns, TC9010 | |
YG801C04R
Abstract: TC9010
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Original |
YG801C04R O-22OF15) 13Min SC-67 500ns, YG801C04R TC9010 | |
DIODE C04 06
Abstract: A407 yg801c
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OCR Scan |
YG801C0415A) 500ns, YG801 DIODE C04 06 A407 yg801c | |
SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
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represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 | |
6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
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OCR Scan |
1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050 | |
CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
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Original |
5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al | |
ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
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OCR Scan |
2SB1532 2SC3821 2SC3822 2SC3865 2SC3886 2SC4383 2SC4507 2SC4508 2SD1726 2SD1740 ET412 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082 | |
Contextual Info: M/m 5? 4 yJj.TJL' m — K / Rectifier Diodes JfelS» ir m 2 in one-package a Devieetype KS823C04 T a=2£C Therm«! rating Characteristics • *3 lFSM*a Tj and Tstg Max. Volts Max.mA Amps. r SMP t f f t A Maximum ratiog VftRM k ) * 1 Volts Amps. SMD KP823C04 |
OCR Scan |
1c-79 c-85C | |
Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6 |
OCR Scan |
TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O-22QF15 | |
ERG81-004
Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
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OCR Scan |
ERA82-004 ERA83-004 ERA81-004 ERA83-006 ERA84-009 ERA85-009 ERB83-004 ERB81-004 ERB83-006 ERB84-009 ERG81-004 ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 era-84 YG811S0 YG802C06 | |
mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
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Original |
RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 | |
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yg801cContextual Info: This ma terial and the Information herein H the property c Fuji Etenne Co .Ltd. They shall be neither reproduced, copte a. lent, or disclosed in any way whatsoever lor the use of any third partynor used lor the manufacturing purposes without the express written consent ol Fuji Electric Co_ ltd . |
OCR Scan |
YG801C04R H04-004-07 YG801C04R yg801c | |
yg802c10
Abstract: LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04
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Original |
O220AB O220F TS805C04 TS805C06 TP805C04 ESAC83-004 ESAC83M-004R ESAC83M-006R YG805C04R YG805C06R yg802c10 LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04 | |
fuji electric marking
Abstract: YG801C04R marking JY
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OCR Scan |
YG801C04R fuji electric marking YG801C04R marking JY | |
YG811S06
Abstract: SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04
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Original |
Nov-01 O-220AB O-220F ERA82-004 ERA83-004 ERA81-004 O-220 ERA83-006 ERA84-009 ERA85-009 YG811S06 SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04 | |
LT GBL406
Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
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Original |
5CE10 5CE100 5CE100A 5CE100C 5CE100CA 5CE10A 5CE10C 5CE10CA 5CE11 5CE110 LT GBL406 SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100 |