YG811S0 Search Results

Fuji Electric SM

Abstract: YG811S04
Contextual Info: 1. SCOPE This sp e c ific a tio n provides the ra tin g s and the te st requirement fo r FUJI SILICON DIODE YG811S04R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot N ol

YG811S04

Abstract: Schottky Diode 40V 5A YG811S04R
Contextual Info: YG811S04R 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1 2 1.2±0.2 Insulated package by fully molding Low VF 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 0.6±0.2 2.7±0.2 Super high speed switching

Diode FAJ

Abstract: Diode FAJ package FAJ 40 YG811S09 5a schottky gb4 diode
Contextual Info: YG811S09 5A • Outline Drawing scHOTTKY b a r r i e r d io d e Connection Diagram ■ Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

MA411

Abstract: YG811S09R
Contextual Info: 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE YG811S09R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot Na

YG811S04R

Abstract: YG811S04
Contextual Info: YG811S04R 40V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6±0.2

Contextual Info: YG811S06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6±0.2

YG811S09

Contextual Info: YG811S09 5A h + —/ •<ÿ * ± 'J K SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully m olding. #{& V f Low V f Connection Diagram Super high speed sw itching. • tv -* — High reliability by planer design. I Applications High speed pow er sw itchin g.

Contextual Info: YG811S09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 1.2±0.2 13Min 3.7±0.2 2.7±0.2 6.3 2.7±0.2 0.7±0.2 0.6±0.2

Contextual Info: YG811S09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 1.2±0.2 13Min 3.7±0.2 2.7±0.2 6.3 2.7±0.2 0.7±0.2 0.6±0.2

Contextual Info: YG811S09 5A ine D raw ings S C H O T T K Y BARRIER D IO D E : Features Insulated package by fully m olding. • {£Vf Low Vf C onnection D iagram Super high speed sw itching. • y \s —>— & tu ru » a w isi± High reliability by planer design. • f f liis : A p p lica tio n s

lt760

Abstract: YG811S0
Contextual Info: YG811S09 5A h+ —/ • <ÿ * ± 'J K SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully molding. #{& V f Low Vf Connection Diagram Super high speed switching. •t v -*— High reliability by planer design. I Applications High speed power switching.

Fuji Electric SM

Contextual Info: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.

YG811S06R

Contextual Info: YG811S06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6±0.2

LIC HD 13

Abstract: YG811S09
Contextual Info: YG811S09 5A i> 3 SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully m olding. • <&VF Low V f m m m & m Connection Diagram Super high speed sw itching. • t v — t - a m tC c ts s ifU tt H igh reliability by planer design. : A p p lic a tio n s

YG811S09R

Contextual Info: YG811S09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 1.2±0.2 13Min 3.7±0.2 2.7±0.2 6.3 2.7±0.2 0.7±0.2 0.6±0.2

Fuji Electric SM

Contextual Info: This malerlal and ih# Information herein Is the property o. Fuji Elee Inc Co.Lid. They shaft be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any ihlrd party, nor used for the manufacturing purposes without ihe express written consent of Fuji Electric Co. Ltd.

era-84

Abstract: 104C smd ERE81-004
Contextual Info: —K / Rectifier Diodes m -it i/yjil Schottky-Barrier Diodes SBD 1 in one-package 1 Ä Device type SMD i'tiSno Maximum rating Viww *1 If i a v ) ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 ERB83-004 ERB83-006 ERB81-004

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

Contextual Info: Schottky-Barrier Diodes Single package Ratings and characteristics V rrm lo Volts Amps. Dim ensions Max. m A G ram s Fig. No. Characteristics Ta=25°C T j and Tstg V fm Irrm # 3 Amps. °C M ax. Volts 0 .6 Ta=60°C) 25 -40 t o +125 0.55 (I f= 0.6A ) 1.0 0.18

SD-46 Diode

Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Contextual Info: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE

ET412

Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

YG811S06R

Contextual Info: Thit material and the Information herein ts the property o í Fuji Elee [oc Co .Ltd. They shall be neither reproduced, coptec tent, or disclosed in any way whatsoever Ior the use ol any third pany.nor used for the manufacturing purposes without the express written consent of Fup Electric Co. Ltd.