YG802C04 Search Results

Contextual Info: YG802C04R 40V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

q406

Abstract: DIODE G7 YG802C04
Contextual Info: YG802C04I1QA I Outline Drawings '> a SCHOTTKY BARRIER DIODE • 4#^: Features Insulated package by fu lly m o ld in g . • fcV p mwm&m Lo w Vk 'C onnection Diagram Super high speed sw itc h in g . • tv - :* - - ftmtzxznigmte r>H H ig h reliability by planer design.

YG802C04

Contextual Info: YG802C04 ioa SCHOTTKY BARRIER DIODE : Features Insulated package by fully m oldin g. • ifeV F Low V f Connection Diagram Super high speed sw itching. • TV— fl t i High reliability by planer d e s ig n . n — r * h () : Applications > CD < • m n h T A v+ 's y

YG802C04

Abstract: YG802C04R
Contextual Info: YG802C04R 40V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

Contextual Info: YG802C04R 40V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

YG802C04

Abstract: cmo5
Contextual Info: YG802C04 10A sch o t t k y I b a r r i e r d io d e Outline Drawing • Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics

YG802C04

Abstract: A442
Contextual Info: YG802C04HOA ' > 3 7 h + — /< y : t — F SCHOTTKY BARRIER DIODE : Features Insulated package by fully molding. • te V F Low V f Connection Diagram Super high speed switching. • y u— id:* ftffitt High reliability by planer design. Applications High speed power switching.

YG802C04

Abstract: YG802C04R
Contextual Info: YG802C04R 40V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 +0.2 -0 0.7±0.2 0.6

G802C04

Abstract: G802C
Contextual Info: YG802C0400A *± /J '> 3 SCHOTTKY BARRIER DIODE : Features • s ty # Insulate d package by fu lly m o ld in g . • te V F Low V f Connection Diagram S u per h ig h speed s w itc h in g . • 7V — f f it t H ig h re lia b ility by p la n e r d e s ig n .

YG802C04

Abstract: A-441 TZJ DIODE a442 V/YG802C04
Contextual Info: YG802C04 ioa SCHOTTKY BARRIER DIODE : Features Insulated package by fully m oldin g. • ifeV F Low V f Connection Diagram Super high speed sw itching. • TV— fl t i High reliability by planer d e s ig n . n — r * h () : Applications > CD < • m n h T A v+ 's y

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

ET412

Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646

Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

TL130

Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
Contextual Info: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009

Fuji Electric SM

Contextual Info: H04-004-07 This m i lariat and the Information herein is the property o Fuji Electric Co .Ltd. They shall be neither reproduced, copied, leni, or disclosed in any w ay whatsoever lor the use o< any third partano: used for the manufacturing purposes without

yg802c10

Abstract: LM3661TL-1.40 YG803C04 YG803C06 TL1115 tc-118 sd TL130 YG805C10 YG835C04 YG811S04
Contextual Info: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps. 接合保存温度

u702

Abstract: YG802C04R YG802C04 yg802c
Contextual Info: Th« material and the Information herein Is the property o Fuji Electric Co .Ltd. They shall be neither reproduced, cop ie d , lem. or disclosed in iny way w h a tsoe ver lor the use of a n y third par t*nor used for the manufac turing p urp o se s w ith o u t

YG811S06

Abstract: SD883-04 SD833 ERA82-004 ESAB82-004 ESAB85-009 ESAC82-004 TP801C04 TP801C06 TP802C04
Contextual Info: Schottky-barrier diode Quick Selection Guide Nov-01 SBD Single Package VRRM Volts 20 30 40 Io 45 60 O O O Lead O O O O O O O O O O O O O O SC(SMD) O O SD(SMD) O O O K-pack(SMD) K-pack TO-220AB O O O O O O TO-220F O O O O TO-3P M5R POWER M6R M8R M6R O O O

common anode schottky to220

Abstract: ERB81-004 era-84 era82 ks823c esac82
Contextual Info: SCHOTTKY BARRIER DIODES <S 20 - 90Volts 45 VOLTS 2 0 - 3 0 VOLTS PACKAGE Part Number lo A SURFACE MOUNT SC TYPE 60 VOLTS lo (A) Part Number 1 SC802-04 Part Number SC802-06 90 VOLTS lo (A) Part Number 1 SC802-09 lo (A) 1 ERA82-004 *1 *1 1 ERA85-009 *1 ’1