A 107 TRANSISTOR Search Results

A1E transistor

Contextual Info: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107

BS107

Contextual Info: SIEMENS BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 S Type BS 107 ^DS 200 V Type BS 107 Ordering Code Q67000-S078 lD 0.13 A ffDS(on) 26 Q Pin 3 D G Package Marking TO-92 BS 107

MARKING BS

Abstract: BS107
Contextual Info: SIEMENS BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V 3 VPT05 158 Pin 1 Pin 2 S Type b BS 107 Vds 200 V Type BS 107 BS 107 Ordering Code Q67000-S060 Q67000-S078 0.13 A Pin 3 D G ^DS(on) Package

RG-107 diode

Abstract: marking BS Q67000-S078
Contextual Info: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information

Q67000-S078

Abstract: BS 107
Contextual Info: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information

equivalent schematic of LM107

Abstract: LM307N A 107 transistor LM101 LM101A LM107 LM107F LM107H LM107J-14 LM307
Contextual Info: DOTÜ^IOIL LM 107, LM 307 O perational A m plifiers FEATURES • • • • • Offset voltage 3 mV m axim um over tem perature 107 Input current 100 nA maximum over temperature (107) Offset current 20 nA maxim um over temperature (107) Guaranteed drift characteristics

2N9303

Abstract: cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc
Contextual Info: NPN Silicon Transistors NPN Silicon Planar Transistors for low-level audio applications Common maximum ratings Type b v CFO V BVCSO V b v ebo PN PN PN PN PN PN PN PN PN PN - BC 107 BC 107 A BC 107 B BC 108 BC 108 A BC 108 B BC 108 C BC 1092 BC 109 B2 BC 109 C2

22 J1J

Contextual Info: Product Description SSW-107 Stanford Microdevices’ SSW-107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch

Contextual Info: VCO-107 Voltage Controlled Oscillator 500-1000 MHz DESCRIPTION The V C O 107 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar transistor and a proprietary output coupling circuit are utilized to provide flat

Contextual Info: SSW-107 Product Description Stanford M icrodevices’ SSW -107 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch

Contextual Info: SSW-107 Product Description Stanford M icrodevices’ SSW -107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch

TRANSISTOR BC 137

Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
Contextual Info: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case

15VPH

Abstract: I-10K
Contextual Info: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATION! SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only '07 SERIES FX-107 GENERAL DESCRIPTION The FX-107, FX-207 and FX-307 are a powerful and flexible fam ily of high performance m onolithic signalling devices,

square wave tone generator

Abstract: FX-207 sequential logic circuit experiments rs 307 FX-107 FX-307 1803 FX FX107
Contextual Info: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATIOM SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only ’07 SERIES FX-107 GENERAL DESCRIPTION The FX -107, FX-207 and FX-307 are a powerful and flexible family of high performance monolithic signalling devices,

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
Contextual Info: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.

Contextual Info: VRL =i437ba4 D G Q I O S Q 3 E'ìE D V A RI -L CO INC T-50-15 V C O -107 Voltage Controlled Oscillator 500-1000 MHz DESCRIPTION T h e V C O 107 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-nolse

Ethernet to fiber optic converter circuit

Abstract: KS8995X KS8995M Media Converter Q12N2222 fiber optic module HFBR-5103 100BASE-FX HFBR-5903 KS8995M txm decoder
Contextual Info: Application Note 107 Micrel Application Note 107 Fiber Mode Connections KS8995M/X Interfacing the KS8995M/X with a 3.3V Fiber Optic Module General Description The KS8995M and KS8995X offer 100BASE-FX operation on two ports, which allows 100Mbps Ethernet to be transferred over long distances up to 2km using fiberoptic cables.

photovoltaic module

Abstract: SCHNEIDER PLC PVA1054 PVA1354 PVA3354 PVAZ172 PVD1054 PVD1354 PVD3354 PVDZ172
Contextual Info: AN-107 Short Circuit Withstand Capability of the Photovoltaic Relay BOSFET is a trademark o f International Rectifier by Stan Schneider Introduction International Rectifier's power 1C, the Bidirectional Output Switch Field Effect Transistor (BOSFET), is designed

TIP107

Abstract: TIP102 of transistors npn pnp
Contextual Info: TIP102, 107 Power Darlington Transistors Features: • NPN and PNP Plastic Power Darlington Transistors for Linear and Switching Applications. • TIP102 type NPN. • TIP107 type PNP. TO-220 Plastic Package Pin Configuration Dimensions Minimum Maximum A 14.42

Tip 107 C

Abstract: transistor tip 107 e 616 E616 IP107 tip 105 tip 107
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE= —4V, lc = - 3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

transistor B42

Abstract: AX400 b42 transistor
Contextual Info: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.

A 107 transistor

Contextual Info: Artmm Coming Attractions m an A M P com pany Avionics Pulsed Power Transistor, 107W, TDM A Format 960 -1215 MHz PH0912-107 Features • • • • • • • • • Designed for JTID S Applications NPN Silicon Microwave Power Transistor Com m on Base Configuration

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA1793 Features Low on-state resistance N-channel RDS on 1 = 69 m MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 72 m MAX. (VGS = 4.0 V, ID = 1.5 A) RDS(on)3 = 107 m MAX. (VGS = 2.5 V, ID = 1.0 A) P-channel RDS(on)1 = 115 m