A 643 TRANSISTOR Search Results

A 643 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

A 643 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TL092 Abstract: AN-643 signal path designer Contextual Info: National Semiconductor Application Note 643 Joe Cocovich December 1989 INTRODUCTION The control and minimization of Electro-Magnetic Interference EMI is a technology that is, out of necessity, growing rapidly. EMI will be defined shortly but, for now, you might be	Original		PDF
minor project proposal on electronics Abstract: TL092 AN-643 signal path designer national special function analog and digital circuits Contextual Info: National Semiconductor Application Note 643 Joe Cocovich April 2001 INTRODUCTION The control and minimization of Electro-Magnetic Interference EMI is a technology that is, out of necessity, growing rapidly. EMI will be defined shortly but, for now, you might be	Original		PDF
C22B Abstract: ESM692 Contextual Info: ESM 642 ESM 643 NPN SILICON TRANSISTORS, EP ITAXIAL PLANAR TR A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X Compì, of ESM 692, ESM 693 % Preferred device D is p o s itif recommandé High breakdow voltage Haute tension de claquage 300 V	OCR Scan	CB-97 C22B ESM692	PDF
TRANSISTOR 8052 Abstract: 8052 basic E03644 AD8305 Microconverter Analog Voltage Variable Attenuator Variable-Optical-Attenuator 400M AD823 AN-643 Contextual Info: AN-643 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Closed-Loop Control Circuit Implementation of the ADuC832 MicroConverter IC and the AD8305 Logarithmic Converter in a Digital Variable Optical Attenuator	Original	AN-643 ADuC832 AD8305 16-lead AD8305, log10 E03644 TRANSISTOR 8052 8052 basic E03644 Microconverter Analog Voltage Variable Attenuator Variable-Optical-Attenuator 400M AD823 AN-643	PDF
zo 107 NA P 611 Abstract: TRANSISTOR 2SC 2026 642p 2sc 643 Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — - — — •» « w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal	OCR Scan	fl23Sb05 QQQ4b43 Q62702-F655 023SbQS BFQ60 zo 107 NA P 611 TRANSISTOR 2SC 2026 642p 2sc 643	PDF
Contextual Info: 19- 1783; Rev 0; 6/97 High-Efficiency, Step-Up DC-DC Converters for 1V Inputs Features The MAXI 642/MAXI 643 are high-efficiency, low-voltage, step-up DC-DC converters intended for devices pow ered by a single alkaline cell. They feature low quies cent supply currents and are supplied in the ultra-small	OCR Scan	642/MAXI 7bb51 ib25M MAX1642/MAX	PDF
f640 Abstract: IR 643 643R Contextual Info: 33 HARRIS IR F640/641/642/643 IR F640R/641R/642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 16A and 18A, 150V - 200V • rDS on = 0 .1 8 fi and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*	OCR Scan	F640/641/642/643 F640R/641R/642R /643R IRF640, IRF641, IRF642, IRF640R, IRF641R, IRF642R IRF643R f640 IR 643 643R	PDF
Contextual Info: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*	OCR Scan	QDS4033 F640/641/642/643 F640R /641R /642R /643R T0-22QAB IRF640, IRF641, IRF642,	PDF
BD 649 Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650 Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage	OCR Scan		PDF
BO 649 Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington	OCR Scan	0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN	PDF
BD 649 Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65 Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington	OCR Scan	fl23SLQS T-33-29 OP-66) 643/BD 645/BD BD647. BD843, BD645. BD647, BD 649 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65	PDF
055E-3 Abstract: csd261 PNP transistor TO-92 BC Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON TRANSISTOR CSA 643 TO-92 Plastic Package E BC Audio Frequency General Purpose Power Amplifier Application Complementary CSD 261 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	C-120 CSA643Rev110302D 055E-3 csd261 PNP transistor TO-92 BC	PDF
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON TRANSISTOR CSA 643 TO-92 Plastic Package E BC Audio Frequency General Purpose Power Amplifier Application Complementary CSD 261 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	C-120 CSA643Rev110302D	PDF
Contextual Info: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available	Original	MP42141 MP42141 MP42141-509	PDF

MP42141 Abstract: RF TRANSISTOR NPN MICRO-X low noise transistors microwave GHZ micro-X Package MP4214135 MP4214100 MP42141-509 S21E S22E MICRO-X Contextual Info: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available	Original	MP42141 MP42141 MP42141-509 RF TRANSISTOR NPN MICRO-X low noise transistors microwave GHZ micro-X Package MP4214135 MP4214100 MP42141-509 S21E S22E MICRO-X	PDF
BF298 Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457 Contextual Info: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .	OCR Scan	BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457	PDF
2n2222 -331 transistors Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132 Contextual Info: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111	OCR Scan	BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C 2n2222 -331 transistors 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132	PDF
ksd 250v 10a Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733 Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623	OCR Scan	OT-23 KSC1623 812/KSC SA812/KSC KSA812/KSC1623 KSC1674/KSC1675 KSC838/KSC1676 KSC945/KSC815 ksd 250v 10a B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733	PDF
BD 650 Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645 Contextual Info: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage	OCR Scan		PDF
monochrome monitor schematic Abstract: CR3424R MSK643 MSK643B high voltage crt transistor 643 Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease	Original	MIL-PRF-38534 175MHz 75Vpp CR3424R MSK643 MSK643B Military-Mil-PRF-38534 monochrome monitor schematic CR3424R MSK643 MSK643B high voltage crt transistor 643	PDF
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease	Original	175MHz 75Vpp CR3424R MIL-PRF-38534 MSK643 MSK643B Military-Mil-PRF-38534	PDF
F508 Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease	Original	MIL-PRF-38534 175MHz 70Vpp CR3424R MSK643 MSK643G F508	PDF
transistor 643 Abstract: CR3424R monochrome crt schematic MSK643 MSK643B high power fet amplifier schematic A 643 transistor Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2nS Transition Times Drives 8.5pF Capacitive Load With Ease	Original	MIL-PRF-38534 175MHz 75Vpp CR3424R MSK643 MSK643B Military-Mil-PRF-38534 transistor 643 CR3424R monochrome crt schematic MSK643 MSK643B high power fet amplifier schematic A 643 transistor	PDF
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease	Original	MIL-PRF-38534 175MHz 70Vpp CR3424R MSK643 MSK643G	PDF

A 643 TRANSISTOR Search Results

A 643 TRANSISTOR Result Highlights (5)

A 643 TRANSISTOR Datasheets Context Search

TL092

minor project proposal on electronics

C22B

TRANSISTOR 8052

zo 107 NA P 611

f640

BD 649

BO 649

BD 649

055E-3

MP42141

BF298

2n2222 -331 transistors

ksd 250v 10a

BD 650

monochrome monitor schematic

F508

transistor 643