A 848 Search Results

Contextual Info: ORDERING INFORMATION AND DIMENSIONS m o le x DeviceNef M IN K Field Attachable Connectors 84854 C ir c iit 3 B lic k -V C ir c iit 2 Raj +V C irc a il 4 W h it * C AN H C irc a il 1 D ra in W ira V ia w A • A l a a r v ia w af c a n a a c lo r Order No.

2SK848

Abstract: CI 2062 pa 2030a DDO7145 2028A transistor fet 2062 W1U-1
Contextual Info: SANYO S E M I C O N D U C T O R 2S K 848 CORP E2E D • 7mQ7k 0D0714S 3 ■ rsi-os % 2062 N -C h a n n e! M O S Silicon F E T Very High-Speed Switching Applications 2842 F e a tu re s • Low ON resistance, very high-speed sw itching A b s o lu te M a x im u m R a tin g s a t T a = 25°C

Contextual Info: Æ lltron PRODUCT CÂTÂLÛi DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH. FLORIDA 33404 T E L: 407 848-4311 • TLX: 51-3435 «FAX: (407) 863-5946 I II T D A IK A FAST RECOVERY RECTIFIERS 700V, 7 0 A , 75ns M A X I M U M R A T I N G S P E R DI OD E

N8481

Abstract: S8481 l913
Contextual Info: A •4- s i g n e t i c 1« « j DCL 1^481 13 J PACKAGE PACKAGE 12 11 ¡0 Q U A D 2 -IN P U T 11 N AN D GATE 8481 2 3 * 5 6 7 I NTEGB*r eO Cl tCUlTS • N o pull-up pr ov ide d BASIC C IR C U IT SCHEM ATIC T h e 8481 i s a Quad 2 -I n p u t N A N D G a te w ith b a r e

Contextual Info: SEMICONDUCTOR BC856W/7W/8W T E C H N I C A L DATA E PITA X IA L PLANAR PNP TRA N SIST O R G E N E R A L P U R P O S E A P P L IC A T IO N . S W IT C H IN G A P P L IC A T IO N . B M M * FEATURES I— • For C om plem entar ' W ith N PN T ype B C 846W /847W /848W .

8481A

Abstract: 8482A aw7 TRANSISTOR 2405A 08481-60004 2482A 2349A 08481-60025 8483A tc 1602A
Contextual Info: O P ER A T IN G A N D SE R V IC E M A N U A L HP 8481A HP 8482A HP 8483A POWER SENSOR SERIAL NUMBERS T his manual applies directly to instruments with serial numbers prefixed: HP 84S1A: 2702A HP 8482A: 2652A HP 8483A: 2701A With the changes described in the Appendix, this

Contextual Info: 10 84858 NOTES: 1. RECOMMENDED MOUNTING HOLE SIZE: A .875 7 .8 4 4 " DIAMETER.' ^ M A T IN G KEY CENTER TO BE ORIENTED WITH POINT OF HEXNUT AS SHOWN WITHIN 1 0°. 3. A LL COMPONENTS ARE ROHS COMPLIANT. Q U A LIT Y SYM BO LS LU cm . NEOPRENE </>S' GASKET, 1/2 PIPE

Contextual Info: Æ lltr o n 330! ELECTRONICS WAY, TEL: 407; 848-4311 DEVICES.INC. WEST PALM BEACH, F L O R I D A 3 3 4 0 7 FAX: ( 4 0 7 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V, SYMBOL D r a i n - s o u r c e Vo I t . ( 1 ) D r a i n - G a t e Vo 1 t a g e

Contextual Info: Transistors I NPN General Purpose Transistor B C 848B W /B C 848B /B C 848C • F e a tu re s • E x te rn a l dim ensions <Units : mm 1 ) B V ceo< 3 0V 0c= 1m A) BC848BW 2 J C o m p le m e n ts the B C 8 5 8 6 /B C 8 5 8 B W . • P a c k a g e , marking and packaging specifications

Contextual Info: IRKD270-18N Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current270 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.85k V(FM) Max.(V) Forward Voltage1.48 @I(FM) (A) (Test Condition)848 @Temp. (øC) (Test Condition)150õ

Contextual Info: IRKD270-26 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current270 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage2600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.85k V(FM) Max.(V) Forward Voltage1.48 @I(FM) (A) (Test Condition)848 @Temp. (øC) (Test Condition)150õ

Contextual Info: IRKD270-14 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current270 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.85k V(FM) Max.(V) Forward Voltage1.48 @I(FM) (A) (Test Condition)848 @Temp. (øC) (Test Condition)150õ

Contextual Info: IRKD270-06N Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current270 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.85k V(FM) Max.(V) Forward Voltage1.48 @I(FM) (A) (Test Condition)848 @Temp. (øC) (Test Condition)150õ

SDF50N40

Contextual Info: J ^ U tT o n PRODUCT D EV I C ES . I NC . 3301 ELECTRONICS WAV • WEST PALM BEACH.FLORIDA 33407 T E L : 4 0 7 848-4311 • TLX: 5 1-3435 « FAX: (407) 8G3-5946 N-CHANNEL UNITS SYMBOL D r a i n - s o u r c e Vo 1t . ( 1 ) D r a i n - G a t e Vo 1t a g e

Contextual Info: Æ lltron IFIR DUCT CÂTÂL©1 D E V IC E S .IN C . 3301 ELECTRONICS WAY. WEST PALM BEACH. FLORIDA 33407 T E L : 407 848-4311 FAX: (407) 863-5946 A B SO LU TE MAXIMUM 400V, 15A, 0 .3 0 Q RA TIN G S PARAMETER SYMBOL D roin-source Vo 1 t . ( 1 ) D r a i n - G a t e Vo 1t a g e

Contextual Info: Æ iitron 3 3 0 1 E L E C T R O N IC S W A Y . TEL: 407 848-4311 PRODUCT DEVICES.INC. W E S T P A LM B E A C H , F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS PET 100V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1 t . ( 1 )

Contextual Info: 10 84854 REF. THIS DRAWING SU P E R S ED ES SD-8A85A-9102 REV-D1 n o t e :T A A IN SERT KEY TO BE O R IEN TA TED TO HEX EPO XY IS TO C O N PLE TE LY COVER R E AR OF INSERT TO DIHENSION SHOWN 3. RECONNENDED NOUNTING HOLE DIA: .875/.84A [ 22.22/21.AX A. A S S E N B LY IS RoHS COMPLIANT BY EXEMPTION *

Contextual Info: Æ iîtr a n DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY. WEST P ALM BEACH. FLORIDA 33407 T E L : 407 848-4311 FAX: (407) 863-5946 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL D r a in - s o u r c e Vo I t .(1) D r a in- Ga te Vo 1t age

Contextual Info: ^ litr o n PRODUCT ÛÂTÂLQ" D E V IC E S .IN C . N-CHANNEL ENHANCEMENT MOS FET 3301 E L E C T R O N I C S WAY • WEST P A L M B E A C H . F L O R I D A 3 3 4 0 7 4 TEL : 407 848-431 1 • TLX: 5 1 - 3 4 3 5 « F A X : (4 0 7 ) 8 6 3 -5 9 4 6 ABSOLUTE

YX 801 led driver 4 pins

Abstract: HIGHWAY 09a 16 PIN DIAGRAM STRA 226 STK 1000 watt power amp circuit diagram TB 2929 Ho am2911pc TRANSISTOR SUBSTITUTION ampro free transistor equivalent book 2sc TIL Display
Contextual Info: < p a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a & a a a a a a a a a a

SDF034

Contextual Info: Æ litron 330! E L E C T R O N I C S WAY, TEL: 407 848-4311 PRODUCT DEVICES,INC. W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 FA X: (407) 8 6 3 - 5 9 4 6 N -C H A N N E L ENHANCEM ENT MOS F E T ABSOLUTE MAXIMUM RATINGS PARAMETER Total 60V, SYMBOL D r a i n - s o u r c e Vo I t .(1)

TV THOMPSON 29 DF 170 G

Abstract: STK 1000 watt power amp circuit diagram ERO Electronic F-48 AM9016E am29203 "evaluation board" 29ls18pc free stk ic sram book 27S28 free transistor equivalent book 2sc
Contextual Info: o& a a a a a a a n a a a a a a a a a r c ia a iia a iia a a n n a a a a a a a a a a a a a a a a a n a a a a a a a ii a a a a a a a r a a a a a a a a a a a a a a ii a a a a a a n n a a a a n a a r o iir c a a a ii a a a a a a n m a a a a a a a a n a a a a a

free transistor equivalent book 2sc

Abstract: transistor tt 2206 substitute yx 801 led driver am29203 am29203 "evaluation board" processor Am2900 emulator AM9101 AM2901ADC AM2901BDC AM9016EPC
Contextual Info: o& a a a a a a a n a a a a a a a a a r c ia a iia a iia a a n n a a a a a a a a a a a a a a a a a n a a a a a a a ii a a a a a a a r a a a a a a a a a a a a a a ii a a a a a a n n a a a a n a a r o iir c a a a ii a a a a a a n m a a a a a a a a n a a a a a

Contextual Info: Æ iitr o n DEVICES.INC. 3301 ELECTRONICS WAY • WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 1000V, A B S O L U T E MAXIMUM R A T I N G S PARAMETER SYMBOL Dr a i n - s o u r c e V o l t . ( l )