A03TG Search Results

Contextual Info: 4 2 1 REVISIONS SYM DISCRETION DATE APPROVED SYM DISCRETION DATE APPROVED A A A A """CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! V1.1 3 PCB LAYOUT BOTTOM VIEW ORDER INFORMATION M D 000-a03TG ft-S1 MD: MINI DIN JACK 000: SERIES NO.

Contextual Info: 8_ _ 7_ _ £ V1-1 I NOTE: THIS DEVICE IS ROHS COMPLIANT. 4 3 2 1 REVISIONS SYM DESCRIPTION DATE APPROVED SYM DESCRIPTION DATE APPROVED A A A A "•♦CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!!

Contextual Info: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical

TL235

Contextual Info: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency

Contextual Info: RFHA1042 125W GaN Power Amplifier 225MHz to 450MHz The RFHA1042 is optimized for military communications, commercial wireless infrastructure and general purpose applications in the 225MHz to 450MHz frequency band. Using an advanced 48V high power density gallium nitride GaN

capacitor 10pf

Contextual Info: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband   Single Circuit for 225MHz to 450MHz

Contextual Info: 4 3 V1.1 SYM A A DISCRETION ••C U S T O M E R 15.10 5.80 DATE D R A W IN G 2 REVISIONS APPROVED SYM A A 1 DISCRETION DATE APPROVED F O R R E F E R A N C E O N L Y , S A M P L E S A P P R O V A L A R E R E Q U IR E D !! 17.90 13.50 PI 0.90 / PCB LAYOUT

Contextual Info: 4 2 1 REVISIONS SYM DISCRETION DATE APPROVED SYM DISCRETION DATE APPROVED A A A A ••C U S TO M E R DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! V1.1 14.00±o.3 3 12.90± o.3 - 13.50 I i_ 5 • & I I _ I_ L^r ! y 7| - i- 0.90 C7 4.70

TL235

Abstract: tl241 TL234 TL240 PTVA030121EA bd 302 transistor TL205 TL2082 ATC100B9R1BW500XB R807
Contextual Info: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency

Contextual Info: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical

TB231

Contextual Info: March 19, 2014 TB231 Frequency=100-470MHz Pout=10W Gain=13dB avg. Vds=28Vdc Idq=0.2A LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com March 19, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012

Contextual Info: 4 3 V1.1 SYM A A DISCRETION ••C U S T O M E R DATE D R A W IN G 2 REVISIONS APPROVED SYM A A 1 DISCRETION DATE APPROVED F O R R E F E R A N C E O N L Y , S A M P L E S A P P R O V A L A R E R E Q U IR E D !! 1.1.5 PCB LAYOUT BOTTOM VIEW ORDER INFORMATION

Contextual Info: _ 8_i_ Z_ i_ VI .1 I NOTE: THIS DEVICE IS ROHS COMPLIANT. 14.00 REVISIONS SYM DESCRIPTION DATE APPROVED SYM DESCRIPTION DATE A A A A ♦♦CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! APPROVED

Contextual Info: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz to 450MHz 125W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband   Single Circuit for 225MHz to 450MHz