A03TJ Search Results

W316

Abstract: Diode W316
Contextual Info: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1

Diode W316

Abstract: 102J DB-54003L-512 EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460
Contextual Info: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1

Contextual Info: T2G4003532-FL 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

capacitor 330pF ATC

Abstract: 8W 0.01% resistor NV SMD TRANSISTOR SMD 1206 RESISTOR 100 OHMS 3214W-1-103E A03TJ B09TJ BZX284C5V1 DB-55008-500 EXCELDRC35C
Contextual Info: DB-55008-500 RF POWER amplifier using 1 x PD55008 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 500MHz ■ Supply voltage: 12.5V ■ Output power: 8W ■ Efficiency: 48% - 54% ■ Load mismatch: 20:1

Contextual Info: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package

Contextual Info: DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 3W ■ Efficiency: 50% - 53% ■ Load mismatch: 20:1

GRM42-6X7R103

Abstract: ATC 17 25 ATC 220 capacitor 100b c14 c13 tyco RESISTOR POTENTIOMETER ATC 100A 100JW capacitor 10 pf zener 100B zener 1206 5.1 v
Contextual Info: DB-55008L-450 Component ID B1 B2 C1 C2,C3 C4 C6, C7 C8 C9 C11,C12 C13 C14 C15 C16 C17 L1,L2 L3,L4 L5 R1 R2 R3 R4 D1 TL1 TL2 TL3 TL4 TL5 TL6 PD55008L Board Description Ferrite Bead Ferrite Bead Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor

vishay rf output power transistor

Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100
Contextual Info: T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package

TRANSMISSION LINE

Abstract: 103k capacitor smt diode b1 w 98 philips zener diode c12 a03tjlb 102J DB-54003L-512 EEVHB1V100P EXCELDRC35C
Contextual Info: DB-54003L-512 BOM Component ID Description B1 Manufacturer Part Code Ferrite Bead PANASONIC EXCELDRC35C B2 Ferrite Bead PANASONIC EXCELDRC35C C1, C2 Capacitor 120 pF 1206 MURATA GRM42-6 COG 121J 50 C3 Capacitor 1 nF 1206 MURATA GRM42-6 COG 102J 50 C4 Capacitor

XPD55008

Contextual Info: DB-55008-500 RF POWER amplifier using 1 x PD55008 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 500MHz ■ Supply voltage: 12.5V ■ Output power: 8W ■ Efficiency: 48% - 54% ■ Load mismatch: 20:1

capacitor 330pF ATC

Abstract: rf power amplifier circuit by 400-470mhz 3214W-1-103E A03TJ B09TJ BZX284C5V1 DB-54003-470 EXCELDRC35C PD54003 355nH
Contextual Info: DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 3W ■ Efficiency: 50% - 53% ■ Load mismatch: 20:1

Contextual Info: STEVAL-TDR014V1 Demonstration board based on the PD55008-E for UHF mobile radio Features • Excellent thermal stability ■ Frequency: 400 - 500 MHz ■ Supply voltage: 12.5 V ■ Output power: 8 W ■ Efficiency: 48 % - 54 % ■ Load mismatch: 20:1 ■ BeO-free amplifier

j358

Contextual Info: T1G4003532-FS 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

panasonic inductor date code

Abstract: 3214W-1-103E A03TJ B09TJ BZX284C5V1 EXCELDRC35C PD55008-E capacitor 330pF ATC STEVAL-TDR014V1
Contextual Info: STEVAL-TDR014V1 Demonstration board based on the PD55008-E for UHF mobile radio Features • Excellent thermal stability ■ Frequency: 400 - 500 MHz ■ Supply voltage: 12.5 V ■ Output power: 8 W ■ Efficiency: 48 % - 54 % ■ Load mismatch: 20:1 ■ BeO-free amplifier

Contextual Info: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package

Contextual Info: T2G4003532-FS 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

XMT031B5012

Abstract: ATC100B5R6
Contextual Info: NPT2022 Preliminary Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Plastic Package