A0912 Search Results

Contextual Info: TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

PG-DSO-20

Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test

FET marking code ndew

Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

Contextual Info: TN2435 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

marking TN

Contextual Info: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

BCP56

Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
Contextual Info: A091201GL A091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The A091201GL and A091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

Contextual Info: A091201E A091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The A091201E and A091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

TN2106K1-G

Abstract: TO-236A 125OC TN2106 TN2106N3-G
Contextual Info: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN0106

Abstract: TN0106N3-G
Contextual Info: TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

atmel 626

Abstract: Atmel 0347 atmel 0730 atmel 0848 ATxmega256A3BU ntc 12 0626 NTC 2.0 0626 ATMEL 842 AVR1923 ntc 5.0 0626
Contextual Info: Atmel AVR1923: XMEGA-A3BU Xplained Hardware User Guide Features • • • • • • • • • Atmel AVR® ATxmega256A3BU microcontroller FSTN LCD display with 128x32 pixels resolution Battery backup Analog sensors - Ambient light sensor - Temperature sensor

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

marking LV4

Abstract: MD2134 DSPD-40QFNK75X5P040
Contextual Info: Supertex inc. MD2134 High Speed Ultrasound Beamforming Source Driver Features ►► Multiple-level ultrasound pulser ►► Fast switching current source for push-pull topology ►► 250MHz maximum frequency, 4.0ns input to output delay ►► 15 independent programmable output level registers

tn2130k1-g

Abstract: TN2130K1G
Contextual Info: TN2130 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN1L

Abstract: tn1lw marking TN
Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: HV4522/HV4622 32-Channel Serial to Parallel Converter with P-Channel Open Drain Outputs Features General Description ► ► ► ► ► ► ► ► TThe HV4522 and HV4622 are low-voltage serial to highvoltage parallel converters with P-Channel open drain outputs.

Contextual Info: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

a0540

Abstract: A2730
Contextual Info: AC ADAPTERS AC output, U.S. version, wall plug-in type INPUT: 120VAC, 50/60 Hz. ALL MODELS ARE UL LISTED. El 41 SERIES, SIZE F El 35 SERIES, SIZE E WITH GROUND PIN SIZE G MODEL NO. A0410 A0420 A0430 A0440 A0450 A0460 A0470 A0480 A0490 A0510 A0520 A0530 A0540

po111

Abstract: ELNA capacitor 100 uf 50v transistor a09
Contextual Info: A091201GL A091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The A091201GL and A091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

ceramic capacitor 103 z 2kv

Contextual Info: A091201E A091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The A091201E and A091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and

A-XD-1W25

Abstract: DC/DC Converters microdc
Contextual Info: A-XD-1W25&B-XD-1W25 Series W Dual&Single Output DC Isolated 1.25 .25W DC-DC Converters SELECTION GUIDE Input Voltage V Output Voltage (V) Output Current (MA) Efficiency B0303XD-1W25 3.3 3.3 378 70 B0503XD-1W25 5 3.3 378 70 B0903XD-1W25 9 3.3 378 70 B1203XD-1W25

Contextual Info: TN2425 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination