A13 MARKING TRANSISTOR Search Results

A13 MARKING CODE

Abstract: transistor a13 MARKING a13 TSC5802DCP A13 transistor a13 marking transistor diode MARKING CODE a13
Contextual Info: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability

power transistor Ic 4A NPN to - 251

Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
Contextual Info: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 4A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability

A14 marking SOT

Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
Contextual Info: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices

Transistor A14

Abstract: MMBTA14LT1 MMBTA13LT1
Contextual Info: MMBTA13/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage Vces

mpsa14

Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data • • • • C Case: TO-92, Molded Plastic

MPSA14

Abstract: MPSA13 impsa13
Contextual Info: 3IÌB5 MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages « -E -* TO-92 Mechanical Data_ • • •

Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ • • • • Case: TO -92, Molded Plastic Leads: Solderable per M IL-STD-202,

MPSA14

Abstract: MPSA13
Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram

SOT23 DIODE marking CODE AV

Abstract: a15 diode 357 SOT23 marking A11 SOT-23 MARKING AV sot-23 marking a13 marking AV package sot23 diode a13 A14 marking SOT sot23 package marking AV
Contextual Info: MMBD1501A/1503A/1504A/1505A High Conductance Low Leakage Diode SOT-23 Features — Two element incorporated into one package. Emitter-coupled transistors — Reduction of the mounting area and assembly cost by one half. Applications — Dimensions in inches and (millimeters)

MPS A13 transistor

Abstract: MPSA13 mps a13
Contextual Info: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

a15 diode

Abstract: diode MARKING CODE a13 MMBD1503A sot-23 diode marking Av SOT23 DIODE marking CODE AV SOT-23 MARKING AV SOT-23 marking BR 357 SOT23 sot-23 marking code pd sot-23 br 13
Contextual Info: High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Two element incorporated into one package. Emitter-coupled transistors z MMBD1501A MMBD1503A Reduction of the mounting area and assembly cost by one half. z RoHS product for packing code suffix "G",

marking 08 sot-23

Abstract: BL SOT23 a15 diode a13 marking sot23 1504A SOT A14 marking SOT23 V 4 diode A14 marking SOT SOT23 A13 MMBD1503A
Contextual Info: BL Galaxy Electrical Production specification High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Pb Two element incorporated into one package. Lead-free Emitter-coupled transistors z MMBD1501A MMBD1503A Reduction of the mounting area and

41 BF transistor

Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

c215a

Abstract: 1902 transistor BTNA13A3 BTNA14A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C215A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA13A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA63A3. Equivalent Circuit

transistor Bc 542

Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
Contextual Info: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times

HM6216255CJPI12

Abstract: HM6216255CTTI12 HM6216255HCJPI-12 HM6216255HCTTI-12 Hitachi DSA0047
Contextual Info: HM6216255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1305B (Z) Rev. 2.0 Dec. 5, 2002 Description The HM6216255HCI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed

HM6216255CTTI12

Abstract: HM6216255HCJPI-12 HM6216255HCTTI-12 HM6216255CJPI12 DSA003633
Contextual Info: HM6216255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1305A (Z) Rev. 1.0 Nov. 30, 2001 Description The HM6216255HCI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed

HM6216255HC

Abstract: HM6216255HCJP-10 HM6216255HCTT-10 HM6216255CTT10 Hitachi DSA00331
Contextual Info: HM6216255HC Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-1196B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

HM62W16255CLTT10

Abstract: Hitachi DSA00280
Contextual Info: HM62W16255HC Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-1200C (Z) Rev. 2.0 Nov. 1, 2001 Description The HM62W16255HC is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM62W8511HCJPI

Abstract: HM62W8511HCJPI-12 DSA003633
Contextual Info: HM62W8511HCI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit ADE-203-1283A (Z) Rev. 1.0 Nov. 9, 2001 Description The HM62W8511HCI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM628511CJPI12

Abstract: HM628511HCI HM628511HCJPI HM628511HCJPI-12 DSA003633
Contextual Info: HM628511HCI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit ADE-203-1304A (Z) Rev. 1.0 Nov. 30, 2001 Description The HM628511HCI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed

rx 3152

Abstract: A1306 2Q394 IC LP7 A-1306 500R BFP405 BGC405 Q62702-G0091 RX82 equivalent
Contextual Info: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

a13 marking transistor

Contextual Info: RF2044 GENERAL PURPOSE AMPLIFIER Typical Applications • Broadband, Low-Noise Gain Blocks • Final PA for Low-Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers • Broadband Test Equipment

HM624100HC

Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00316
Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing