A13E IC Search Results

T605L

Contextual Info: HOLTEK H r 3 Series of Decoders Features • • • • • • • O perating voltage: 2.4V~12V Low power and high noise im m unity CM OS technology Low stan db y current C apable of decoding 18 bits of inform ation P a irs with H O L T E K ’s 3 18 series of encoders

A13E

Abstract: a13e ic
Contextual Info: R E V IS IO N S ZONE D E S C R IP T IO N LTR H i R L D R A W ij c r R J l O B S O L E T E £ Z .& J L 1— • N e w W T H O U Ï P ts -2 f ie v / A .P —► } I L • Z .5 ’ 6 j~*-4 I ^ , A 5 TÆ 6 /n / 3 6 A D IZ 5 3 - Cp s - w - p y 1 * & + ' / / ’> w i -

Contextual Info: EPSON P F 756-02 SRM20512LLMT85/10 512K-Bit Static RAM • Industrial Tem perature Range • L o w Supply C urrent •A c c e s s Time 85ns/100ns • 6 5 ,5 3 6 W ordsx8-bit Asynchronous I DESCRIPTION The SRM20512LLMT85/1O is a 65,536 wordsx8-bit asynchronous, static, random access memory on a monolithic

5 pin A13E

Abstract: A12E 7C166 Cypress 7C166 7c164-15 7C164-12 7C164 a13e
Contextual Info: CY7C164 CY7C166 Ì CYPRESS SEMICONDUCTOR 16Kx 4 Static RAM Features Functional Description • High speed — IS ns The CY7C164and CY7C166 are high-per­ formance CMOS static RAMs organized as 16,384 by 4 bits. Easy memory expan­ sion is provided by an active LOW chip en­

Contextual Info: Preliminary i w o a MX83L3810 c Mask ROM IB/16 Bit Output ORDER INFORMATION FEATURES • Bit organization 2M x 16 word mode) • Fast access time Random access: 120ns (max.) Operating: 40mA • Current Part No. Access Time Package MX23L3210MC-12 120ns 44 pin SOP

Contextual Info: Tem ic HM 65789 MATRA MHS 16 K x 4 High Speed CMOS SRAM with Output Enable Introduction The HM 65789 is a high speed CMOS static RAM organized as 16384 x 4 bits. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 15 ns are available with maximum

A13E

Abstract: orion unilab A11E unilab unilab 8620 A10E 5 pin A13E af toolkit A12E 8420 cpu
Contextual Info: 17E D ZILOG INC •nfl4QM3 OOCHSSb 0 P r e lim in a r y P r o d u c t S p e c ific a tio n T M 9 - H - 0 7 Z86C27EAB E m u l a t io n A d a p t e r B o a r d May 1989 FEATURES • Z86C9708PSC 8 MHz ROM-less device. ■ On-board CPU Crystal and VideoL-Coscillatorcircuitsjumper selectable.

TSOP32-P-820-L

Abstract: 5 pin A13E
Contextual Info: OKI Semiconductor MSM82V1001LP 131,072-Word x 8-B it CMOS STATIC RAM DESCRIPTION The MSM52V1001LP is a 131,072-word by 8-bit CMOS static RAM featuring 3.0 V to 3.6 V power supply operation in the range of -40 "C to 85,'C and direct LVCMOS input/output compatibility.

Contextual Info: SONY CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATM/AYM/AM/ATN/AYN is a high speed CMOS static RAM organized as 131072words by 8-bits. Special feature are low power consumption and high speed.

CXK581000BP

Abstract: a1de CXK581000BTM cxk581000bm CXK581000B 5 pin A13E
Contextual Info: S O N Y CXK581OOOBTM/BYM/BM/BP -55LL/70LL/1 OLL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOBTM/BYM/BM/BP is a high speed CMOS static RAM organized as 131072 words by 8 bits. Special feature are low power consumption, high speed and broad package line-up.

2183A

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V

Contextual Info: EPSON SRM20V1OOLLMT7 1M-Bit Static RAM • DESCRIPTION • • • • • Low Supply Voltage Wide Temperature Range Low Supply Current Access Time 70ns 2.7V 131 Wordsx8-Bit Asynchronous The SRM20V100LLMT7 is an 131,072 wordsx8-bit asynchronous, static, random access memory on a monolithic

TC57H1025AD-55

Contextual Info: 1 M EG A BIT 65,536 W O R D x 16 BIT HIGH SPEED CMOS U.V. ERASABLE AND ELECTRICALLY PROGRAMM ABLE READ ONLY M E M O R Y DESCRIPTION The TC57H1025AD is a 65,536 word X 16 bit high speed CMOS ultraviolet light erasable and electrically programmable read only memory. The TC57H1025AD is JEDEC standard pin

Contextual Info: EPSON SRM20V1OOLLMX7 1M-Bit Static RAM • DESCRIPTION • • • • • Low Supply Voltage Wide Temperature Range Low Supply Current Access Time 70ns 2.7V 131 Wordsx8-Bit Asynchronous The SRM20V100LLMX7 is an 131,072 wordsx8-bit asynchronous, static, random access memory on a monolithic

MC68HC11

Abstract: MC68HC24 ADI1046R2 MC146805E2 MC68HC01 3ad4 3AD5 MC68HC24/D
Contextual Info: Order this data sheet by MC68HC24/D MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M C68HC24 Advance Information Port Replacem ent Unit P R U The MC68HC24 is a peripheral device which replaces ports B and C of the MC68HC11 microcomputer (MCU). These ports are lost when the MCU is placed in the expanded or

Contextual Info: «HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands

intel 8097 microcontroller

Abstract: bbc 598 479 DIODE 8097 microcontroller architecture and details connector pinout intel 8096 microcontroller pot intel 8096 assembly language intel 8061 P82510 80C196KB hall ic a03e
Contextual Info: EV80Cl96KB Evaluation Board User’s Manual bier Number 270738-( O] EV80C196KB Microcontroller Evaluation Board Release 001 February 20,1989 Copyright 1989, Intel Corporation Intel Corporation makes no warranty of any kind with regard to this material, including, but not limited

Contextual Info: SN74ACT3638 512 x 32 x 2 C L O C K E D B I D I R E C T I O N A L FI RST-I N, F I R S T - O U T M E M O R Y S C A S 228C -JU N E 1 9 9 2 - REVISED SEPTEMBER 1995 F r e e - R u n n i n g C L K A and C L K B Can Be IRA, O R A , AEA , and A F A Flags A s y n c h r o n o u s or C o i n c i d e n t

A18E

Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
Contextual Info: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide

BFJ 64

Contextual Info: 32 0 S 5 - L _ S 5 H- L 7 / 1 5 / 9 8 7 : 5 7 PM P age 1 SHARP LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION High performance read access time The LH 28F320S 5-L/S5H -L flash m em ories with

po109

Abstract: amd fch 1334 193 ec5 CNT17 FRC5 TCS10 FR20 MB91191 MB91192 0047F
Contextual Info: FUJITSU SEMICONDUCTOR CM71-10113-1E CONTROLLER MANUAL FR20 32-Bit Micro Controller MB91191/MB91192 Series Hardware Manual FR20 32-Bit Micro Controller MB91191/MB91192 Series Hardware Manual FUJITSU LIMITED PREFACE • Purpose of This Document and Intended Reader

ALI M 3329 B1

Abstract: PROCESSOR ALI 3329 R01DS0052EJ R01UH0033EJ ali m 3329 R5F562N8BDFP LGA-85 R5F56218 r5f56218bdfp ALI M 3329 d1
Contextual Info: User’s Manual 32 Cover RX62N Group, RX621 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series Preliminary Specification This is a Preliminary specification and is subject to change. All information contained in these materials, including products and product specifications,

UDC 1200

Abstract: TA 8275h 4019 data TTL 1980 131-6 bj 028 BCM 2836 RX62N 16-1-223 resistor DTC 164213 STPA2
Contextual Info: User’s Manual 32 Cover RX62N Group, RX621 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series Preliminary Specification This is a Preliminary specification and is subject to change. All information contained in these materials, including products and product specifications,

REJ09B0435

Abstract: 27611 power transistor transistor full 2000 to 2012 ta 8264h R5F56108 IR107 RX621 transistor 27611 transistor A 27611 3PA2-A2
Contextual Info: User’s Manual 32 RX610 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by