A1711 Search Results

Contextual Info: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz

Contextual Info: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for

Contextual Info: MEST2GFC-010-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for

NJU7670

Abstract: NJU7670D NJU7670M NJU7670V NJU767Q
Contextual Info: v JL □ \î O m » I S 1 N O N J O < • • • • • • • • s g s i a ? EE >-• a . S i p fl SS S * wiili ! îd - m 1 F» ù* M s ÌS 9 Hfî ■M a . y—\ as Wllll TTlSl p j l plg] ? mm o 3 > < EE si a z fi s o I CJl Û* m 9tt n a» f ¿ S w

a1711

Abstract: A1711-2 ENA1711 ATP114 A1711-1 A1711-3
Contextual Info: ATP114 Ordering number : A1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance

Contextual Info: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with

Contextual Info: MEST2G-150-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for reliable high power switch applications up to 150 watts. Usable

Contextual Info: MSDM20-0118 ZERO BIAS SCHOTTKY DETECTOR 2012 Molded Plastic DFN Description Features The MSDM20-0118 is a Silicon Zero Bias Schottky Detector module in a molded plastic DFN 2012 package. It can be used up to 26 GHz and power detection up to 10 dBm. Only a DC return is required

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

Contextual Info: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz

Contextual Info: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz

transistor a1413

Abstract: a1413 a2305 4b42 A14129 ls-t73 transistor a1412 a2400 a2380 A18004
Contextual Info: Motorola XGATE Assembler Revised 02-Jun-2004 Metrowerks and the Metrowerks logo are registered trademarks of Metrowerks Corporation in the United States and/ or other countries. CodeWarrior is a trademark or registered trademark of Metrowerks Corporation in the United States

MEST2G-150-10-CM32

Abstract: a1711
Contextual Info: MEST2G-150-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for reliable high power switch application up to 150 watts. Usable up

a17110

Contextual Info: MEST2G-150-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for reliable high power switch applications up to 150 watts. Usable

application notes Microwave

Contextual Info: MMA504 DC to 4.0 GHz Amplifier 2012 Molded Plastic DFN Description: Features: MMA504 is a fully matched amplifier fabricated in Aeroflex / Metelics’ highly reliable InGap HBT technology and housed in a low cost 1.9 X 1.1 plastic DFN package. It is designed for wireless infrastructure, test instruments

l6703

Abstract: L6283 l6278 L6284 L6916 l6262 A1658 SVC 561 14 C3041 A1671
Contextual Info: RVCT 3.1 Build Tools - Errors and Warnings March 2008 Introduction This document lists the errors and warning messages that can be generated by the Build Tools of the ARM RealView Compilation Tools RVCT version 3.1, including patches. RVCT 3.1 is provided with RVDS

A1711

Contextual Info: Ordering number : A1711A ATP114 P-Channel Power MOSFET http://onsemi.com –60V, –55A, 16mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.) Halogen free compliance

Contextual Info: MEST2G-150-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for reliable high power switch applications up to 150 watts. Usable

Contextual Info: MEST2G-150-10-CM30 PIN DIODE SWITCH ELEMENT CM30 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for a reliable high power switch application up to 150 watts. Usable up

Contextual Info: MEST2G-150-20 PIN DIODE SWITCH ELEMENT CM26 non-hermetic Bolt Down Package Description Features The MEST G-150-020-CM26 is a Thermal to Ground Series diode Switch Element in a bolt down Copper package. This part is designed for reliable high power switch application up to 150 watts. Usable up to

Contextual Info: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with

Contextual Info: MSWSE-010-16S Silicon PIN Diode Switch Element 1 2 0402P Molded Platic DFN Package Features Description The MSWSE-010-16S is a PIN diode switch element designed for medium incident power applications, up to 10 W C.W. It has low insertion loss and medium

l6703

Abstract: asm 1442 L6916E SVC 561 14 L6232E A1659 a1718 a1694 C2068 STR 6765
Contextual Info: RVCT 3.0 SP1 Build Tools - Errors and Warnings Last updated March 2008 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 3.0, 3.0 Service Pack 1, and subsequent 3.0 patches. If you are using ADS

L6283

Abstract: L6278 l6703 L6916 A1273 L6320W 0496B L6252 L6324 A1671
Contextual Info: ARM Compiler toolchain Version 4.1 Errors and Warnings Reference Printed on: October 25, 2010 Copyright 2010 ARM. All rights reserved. DUI 0496B ID102510 ARM Compiler toolchain Errors and Warnings Reference Copyright © 2010 ARM. All rights reserved.