A17111 Search Results

Contextual Info: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for

Contextual Info: MEST2GFC-010-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for

a1711

Abstract: A1711-2 ENA1711 ATP114 A1711-1 A1711-3
Contextual Info: ATP114 Ordering number : ENA1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance

C01A

Abstract: GaAs p-i-n diodes a1711
Contextual Info: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with

A1711

Contextual Info: Ordering number : ENA1711A ATP114 P-Channel Power MOSFET http://onsemi.com –60V, –55A, 16mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.) Halogen free compliance

A1711

Abstract: ATP114 A17113 A1711-2 A1711-3
Contextual Info: ATP114 注文コード No. N A 1 7 1 1 三洋半導体データシート N ATP114 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=12mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=4000pF(typ.)

Contextual Info: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for

Contextual Info: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for

Contextual Info: MEST2GFC-10-25 PIN DIODE SWITCH ELEMENT MESTEG Description Features A broadband medium power series switch element in chip form (26X12 mils). This is an Electrical Series device with a direct Thermal path to Ground (EST2G). It can be used in place of Beam Lead devices for

A1711

Abstract: A1711-3
Contextual Info: ATP114 Ordering number : ENA1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance

Contextual Info: ATP114 Ordering number : ENA1711A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.)

Contextual Info: ATP114 Ordering number : ENA1711A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.)