A7W 20 Search Results

A7W 34

Abstract: a7w 20 DS146 a7w 9 ds1480 ds1216 ds2503 DS1722 DS1671 AC501
Contextual Info: RMP Process Samples 0.8 µm 0.6 µm Double Poly, Double Metal 0.8 µm Rev DS80CH10 A3 A2 DS21352 A4 A5 Product Rev DS1722 A2 DS1722 A4 DS1775 A1 DS1775 A2 DS1820 B5 DS1820 B5 DS1820 B6 DS1822 B6 DS1822 B6-PA DS1847 B1 DS1848 B1 DS21352 A3 DS21352 A4 DS21354

A7W 85

Abstract: diodes a7w a7w diode A7W smd A7W 75
Contextual Info: Diodes SMD Type High-Speed Double Diode BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Repetitive peak forward current: max.450 mA. 1 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 2 +0.1 0.95-0.1 +0.1

a7w+18

Contextual Info: 4 3 A. 3 T ion and b dtfnrad an ’afiarttM X m S m I1* i te granted ta n M a w 4 _ !_ 2 R E V IS IO N S SVM DATE DESORPTION ECN A APPROVED 09/ 3 1 /0 7 D -SU B TECHNICAL DATA SHELL : Steel 2 .5 u m 1 0 0 u ” min tin over 1.2 5 um (50 u”) min nickel

Contextual Info: i to Vw m h ^ i o f Am ptam l Ovpowlto i oad l i i _jondfaon M k l i aot fa to liilm l, raproduoto r to p v t fa r manufaoturo o r M h to a im o m r faoa . m rt A ta t no rig ht l i gnnfad Conoratfai o tto * to odor eoncori cr fa im my Ito w t o fa too d

a7w 80

Abstract: W2416-70L a7w 16 W2416 W2416-10L W2416K-70 A7W 13 a7w 35 a7w 60 A7W AG
Contextual Info: Al/G 1 5 IttZ W2416 IVinbond 2K X 8 CMOS STATIC RAM DESCRIPTION FEATURES The W2416 is a High Speed, Low Power CMOS • Low Power Consumption : Active : 250mW Typ. Static RAM Organized as 2048X8 Bits Standby : 10/zW(Typ.)- L-Version Operates on a Single 5-Volt Supply. It is

A7W 19

Abstract: A7W 13 A7W 05 a7w 60 A7W 03 a7w 45 a7w 26 a7w 01 a7w 02 a7w 25
Contextual Info: E G & G JUDSON S7E D • 303Dh0S 0G001Ô3 T ■ DF Series DF-XXX1 _ Features • • Built-in Interference Planar Diffused Filter • Low Noise • Hermetically Sealed • 106 Blocking • Oxide Passivated Operating Data and Specifications at 23 °C:

A7W 85

Abstract: BAV99 A7w
Contextual Info: Product specification BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Repetitive peak forward current: max.450 mA. 1 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05

Contextual Info: ADE-203-072C Z H M 6 7 W 1 6 6 4 S e r i e s _ J a n .0 3 *1 9 9 4 Target Specification 65536-W ord x 16-Bit High Speed Bi-CMOS Static RAM • DESCRIPTION TheHM67W1664 is asynchronous high speed static RAM organized as 64K word x 1Gbit. These operate 3.3V. It realizes

army

Abstract: GNS 3011 T1IS EDI81256CA
Contextual Info: ELECTRONIC DESIGNS INC 30E D m 3230114 00005=11 S • m D i EDI81256CA/LPA/PA H » c t r « ilo O n l g n i In o . i High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256CA/LPA/PA is a 262,144 bit high per­ formance, low power CMOS Static RAM organized as

a7w transistor

Abstract: Ba 33 bco A7W 88 transistor a7w A7W 86 a7w 84 a7w 82 a7w 89 a7w 83 transistor a7w 82
Contextual Info: PREPARED BY : SPEC No. LD-10407A DATE SHARP APPRO V ED B Y : D A TE F IL E N O . IS S U E : PAGE TFT LIQUID CRYSTAL DISPLAY GROUP S H A R P C O R P O R A T IO N A u g ,1 9 ,1 9 9 8 : 22 p ag e s A P P L IC A B L E G R O U P T F T L iq u id C ry stal D isplay

Contextual Info: ADVANCE M i m n M 2 5 b K X 1 8 , 1 2 8 K X 3 2 /3 6 I LVTTL, PIPELINED ZBT SRAM d R M h H - .U IV I U MT55L256L18P, MT55L128L32P, MT55L128L36P ZBT SRAM 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • •