AA 118 DIODE Search Results

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

diode aa118

Abstract: aa118 diode AA118 Germanium Diode aa118 germanium point contact diode AA118 Germanium diode STg-50 "Phase Discriminator" Germanium "Point Contact Diode"
Contextual Info: AA 118 Germanium-Spitzendiode Germanium point contact diode Anwendungen: Als Diodenpaar für Phasendiskriminatorschaltungen mit hohen Betriebsspannungen. Applications: M atched pairs for phase discriminator circuits with high supply voltages. Abmessungen in mm

Germanium diode OA 182

Abstract: aa 118 diode DIODE AA 119 OA 182 diode Graetz AA119 AA118 diode aa 113 DIODE aaz ring modulator
Contextual Info: Dioden Diodes for demodulator circuits Type Fig. Nr. Maximum ratings at ^ m b Characteristics Notes 2£ °C mA Ä thJA °C/W V 'F mA * Up AA 112 14 15 30 <400 0.95 < 1.5 10 For ratio d e te cto rs w ith low load resistance. M atched pairs are available

1N34

Abstract: SFD112 1N542 2AA113 112-AA AA130 aa116 1N34 diodes 2-AA119 AA118
Contextual Info: y germanium signal diodes diodes de signal au germanium 1H0MS0N-CSF Type VR •o max V ■F* max ImA) vF / max (V) iF IR ImA) max t*A ) tungsten point contact - general purpose 1N34 1N 48 1N 54 A 1N 63 1N 65 1N 81 1N 126 A 1N 127 A 1N 128 1N 198 50 70 50

din 7504

Abstract: DSA 7504 35-04A D0203 A 1712 ds 35-12 e DSA-36W-12 36 L/bbc dsa diodes DSA 1.2
Contextual Info: Rectifier Diodes = 2 - 25 A, Standard Diodes DS. , Avalanche Diodes (DSA.) FAV Type V « -c Pr h U . kW 1.« A •V Package stylo V * See outlines on page 31 I Fig. 8 weiant 0.8 g 10 nw DSA 1-18 D * DSA 1-16 D • DS 1-16 D • DSA 1-14 D • DS 1-14 D

hpf505

Abstract: IE 500 MCL SRA-1H hpf 505 hpf-505 mcl sra-3h MCL RAY-3 Funkamateur MCL SRA AA112
Contextual Info: FUNKAMATEUR - Bauelementeinformation Schottky-Einzeldioden und Schottky-Ringm ischer Hinweise Grenzwerte Schottky-Dioden Typ BAT 41 BAT 42 BAT 43 BAT 45 BAT 46 BAT 47 BAT 48 BAT 85 BAT 86 MB R 745 MSP 145 MS 106 MS 109 MS 305 MS 306 MS 309 MS 505 MS 506 MS 509

FBG676

Abstract: FFG1156
Contextual Info: 7 Series FPGAs Packaging and Pinout Product Specification UG475 v1.9 February 14, 2013 The information disclosed to you hereunder (the "Materials") is provided solely for the selection and use of Xilinx products. To the maximum extent permitted by applicable law: (1) Materials are made available "AS IS" and with all faults, Xilinx hereby DISCLAIMS ALL

germanium diodes

Abstract: AA118 aa132 1N126 1N126A 1N128 AA131 1N933 1N198 1n34
Contextual Info: Tungsten point contact germanium diodes • General purpose Diodes de signal au germanium à pointe tungstène - Usage généraI Type Case B oîtie r VR V *0 iF * VF max (mA) max / ,v // *R (*xA> lF (mA) Tam b 25 »C / / / •r (mA) / max Vr (V) max Vr (V)

diode avalanche DSA

Abstract: diode avalanche DSA 42 diode avalanche DSA 25 8 diodes DSA 6 A 1712 25-16AT 2X17 10-32-UNF-2A
Contextual Info: Rectifier Diodes lFAV = 2 - 45 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type ^RR M *FAV V 100°C A 2.3 p ^FRMS 1-12 D 1200 DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 1200 1600 1800 DS DS 2-08 A 2-12 A 800 1200 DSA 2-12 A DSA 2-16 A DSA 2-18 A 1200 1600

aa 118 diode

Abstract: 05nm5
Contextual Info: 2 / a y h + y j y a - K U 7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60SC6M Unit • mm Package I MTO-3P -, ^+0.5 lo-o.i 4>33±0-2 n-^bgÖT? #i| Date code 60V 60A • V aa%j Type No. » Polarity • T jl5 0 ° C • Prrsm 77 5.0 ±0-3

MC1117

Abstract: MC1116 IVI01118 IVIC1116 IVIC111IV1C111T IVIC111S 100KC ScansUX1007 MC1118
Contextual Info: MOTOROLA B O X 9 5 5 • P H O E N I X 1. IV IC 11 1 6 A R I Z O N A IV IC 1 1 1 8 MULTI-DIODE GATES fo r COMPUTER MEMORY APPLICATIONS SILICON INTEGRATED CIRCUIT MEMORY DIODES • M e d iu m C u r r e n t R ange lF= 3 0 0 m A d c • H ig h -S p e e d R e c o v e ry T im e

sy 170

Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Contextual Info: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs­ Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170

xc7k325T

Abstract: XC7K160T XC7K410T FBG676 FBG484 FFG900 FFG676 UG475 FFG676 xc7k325t XC7K325T specification
Contextual Info: 7 Series FPGAs Packaging and Pinout Advance Specification UG475 v1.0 March 1, 2011 NOTICE: This document contains preliminary information and is subject to change without notice. Information provided herein relates to products and/or services not yet available for sale, and provided solely for information purposes and are not intended, or

ds 35-12 e

Abstract: 4508A DSA117-16 dsai17-12a DSAI11016F A 3150 V DSAI110
Contextual Info: Rectifier Diodes 'FA V = 2 - 77 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type FAV FSM T =100°C 45°C 10 ms New DS 1-12 D DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 2-08 A DS 2-12 A DSA 2-12 A DSA 2-16 A DSA 2-18 A DSP 8-08 A DSP 8-12 A DSP 8-08 AS OSP 8-12 AS

OL391N-03

Abstract: OL392N-03
Contextual Info: O K I electronic com ponents QL392N-03, QL3492N-03 1.3 im Low-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL392N-Ü3 and OL3492N-03 are 1.3 (un, M Q W InG aA sP/ InP laser-diode coaxial m odules w ith single-m ode fiber pigtails. These m odules are optim al light sources for optical subscriber loops and

Contextual Info: Central CMPD5001 CMPD5001S TM Sem i c o n d u c t o r C o r p . HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designedforsw itching inductive load

G 50N60

Abstract: 50N60 igbt 100a 50n50 IXGH50N60B
Contextual Info: HiPerFAST IGBT with Diode V V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C 2 5 500 V 75 A 600 V 75 A ^ C E s a t 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 vCES V C GR VGES VGEM 'c o ' cm 50N60 Tj = 25°C to 150°C

L9 Zener

Abstract: ST03D 65 ST03D-82 U180 sa marking axial diode ZD 8.2V
Contextual Info: Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • ftM U ! OUTLINE ST03D-82 Unit: mm Weight 0.65 f Package : AX 10 82V 300W « i t 26.5 26.5 <j>AA Feature ■ Power Zener Diodes with FRD ■ Axial Package ■ Application for snubber circuit

Contextual Info: □ IXYS HiPerFAST IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C25 500 V 75 A 600 V 75 A V CE sat tfi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Maximum Ratings Test Conditions 50N50 V V CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

diode avalanche DSA 2-16a

Abstract: diode avalanche DSA diode avalanche DSA 1-14 DSA 22-12 A diode avalanche DSA 17-14 A diode avalanche DSA 25 8
Contextual Info: A S E A BRO WN/ABB SEMICON 03 D I 00MÖ3DÖ □ □ □ □ ! £ ? I T - o I- ot SE2HHS£tu7"^ Netzdioden Rectifier diodes Diode Vrrm IpRMS Ifavi os DSA Typ/type DS DS DS DS DS 1-04 1-08 1-12 1-14 1-16 f DSI DS 1,2-04 E DS 1,2-08 E DS 1,2-12 E DS 1,2-14 E

Contextual Info: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20

PI74ST1G125TEX

Contextual Info: PI74ST1G125 SOTiny Gate ST Buffer with 3-State Output Features Description • High-speed: tPD = 1.8ns typical The PI74ST1G125 is a buffer with 3-state output that operates over the 1.8V to 3.6V VCC operating range. • Broad operating range: VCC = 1.8V – 3.6V

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T