AC780 Search Results

NPTB00004

Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
Contextual Info: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for

PIMD3

Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power

ifr 2390A

Abstract: 2390a EN55011-1991 AC0410 return loss bridge 2392A 2392A-110 M10HW AC238 ma 8620
Contextual Info: Spectrum Analyzers 2390A series Spectrum Analyzers A range of RF and Microwave Spectrum Analyzers that offer value and performance to both field and bench users • Fully synthesized Spectrum Analyzers to 26.5 GHz • 3 Hz to 30 MHz resolution bandwidth filters

NPT1007

Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99
Contextual Info: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature

NPT25100

Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader

NPT25100

Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
Contextual Info: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power

PIMD3

Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power

PIMD3

Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power

NPTB00004

Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
Contextual Info: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.

NPT25100

Abstract: PIMD3
Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power

AC712

Contextual Info: B U R R -B R O W N DAC712 16-BIT DIGITAL-TO-ANALOG CONVERTER With 16-Bit Bus Interface DESCRIPTION FEATURES HIGH-SPEED 16-BIT PARALLEL DOUBLEBUFFERED INTERFACE DAC712 is a complete 16-bit resolution D/A converter with 16 bits of monotonicity over temperature.

NPTB0004

Abstract: NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz
Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with large-area silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and

Contextual Info: OCT 1 9 ' s2° B U R R -B R O W N AC7800 AC7801 AC7802 I e s Im b B Dual Monolithic CMOS 12-Bit Multiplying DIGITAL-TO-ANALOG CONVERTERS APPLICATIONS FEATURES PROCESS CONTROL OUTPUTS ATE PIN ELECTRONICS LEVEL SETTING PROGRAMMABLE FILTERS PROGRAMMABLE GAIN CIRCUITS

PIMD3

Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power

PIMD3

Abstract: npT1007 TRANSISTOR J15
Contextual Info: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature

AC4105

Abstract: ifr 2398 IFR SYSTEMS ifr AC4105 AC261 AC4103 IFR 640 PCMCIA SRAM Card AC2388 AC0100
Contextual Info: Spectrum Analyzers 2398 9 kHz to 2.7 GHz Spectrum Analyzer A breakthrough in high performance spectrum analysis, combining cost effectiveness and portability in a new lightweight instrument • 9 kHz to 2.7 GHz fully synthesized frequency range • 8.2 kg 18 lb : Lightweight, rugged and

Contextual Info: Dual Monolithic CMOS 12-Bit Multiplying DIGITAL-TO-ANALOG CONVERTERS FEATURES APPLICATIONS • TWO D/As IN A 0.3" WIDE PACKAGE • • SINGLE +5V SUPPLY • ATE PIN ELECTRONICS LEVEL SETTING • • PROGRAMMABLE FILTERS • PROGRAMMABLE GAIN CIRCUITS HIGH SPEED DIGITAL INTERFACE: