AD 153 TRANSISTOR Search Results

AD 153 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

AD 153 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994.
AN-994 Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
irf 1830 Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	PDF	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994. irf 1830 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
MGY30N60D Abstract: No abstract text available Text: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264	Original	PDF	MGY30N60D/D MGY30N60D MGY30N60D/D* TransistorMGY30N60D/D MGY30N60D
p2f sot-223 Abstract: PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3 Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.	Original	PDF	PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1/D p2f sot-223 PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3
transistor ph-42 Abstract: STRS6301 M.P transistor STR-S6301 C746 ic 746 MARKING MY YG6260 TRANSISTOR MARKING YB marking SL YB Text: SRN.KEN E L E C T R I C C O M P A N Y , LTD, SANKlDl SWJ’KtIIlVG 1UWLAlOR HYRRTD lC Type: STR-S6301 1. The present specifications shall only apply to &Sanken SwitchinR Regulator Ilybrjd IC, type STR-S6301. 2. General Hybrid JC incorporated with a S-layer Silkon Transistor,	Original	PDF	STR-S6301 STR-S6301. STR-S6000 S6301 L7170E transistor ph-42 STRS6301 M.P transistor STR-S6301 C746 ic 746 MARKING MY YG6260 TRANSISTOR MARKING YB marking SL YB
transistor ph-42 Abstract: STRS6301 sanken ic regulator str STRS6301A STR-S6301A STR-S6301 STRS6 STR-S630 sanken str z sanken str Text: SRN.KEN E L E C T R I C C O M P A N Y , LTD, SANKlDl SWJ’KtIIlVG 1UWLAlOR HYRRTD lC Type: STR-S6301 1. The present specifications shall only apply to &Sanken SwitchinR Regulator Ilybrjd IC, type STR-S6301. 2. General Hybrid JC incorporated with a S-layer Silkon Transistor,	Original	PDF	STR-S6301 STR-S6301. L7170E STR-S630L. STR-S6301A STIbS6301A STR-86301 transistor ph-42 STRS6301 sanken ic regulator str STRS6301A STR-S6301A STR-S6301 STRS6 STR-S630 sanken str z sanken str
2N1174 Abstract: 2N1179 2N1113 transistor marking WY ske 250A Text: ● MIL-s-19500/215 NAVV 9 November 1961 ~fTARY TRANSISTOR, 1. SPECIFICATION ‘IYPES 2N1179 ANo SCOPE 1.1 ~ - Tht8 specification covers PNP type 2N1 174 transistors, tie general 19500, unie.m otherwise specified herein. the detail requirements for germankm,	Original	PDF	MIL-s-19500/215 2N1179 IMDL12 2NI174; MIL-fl-19520/ll 5001he 2N1174. 2N1174 2N1113 transistor marking WY ske 250A
mps2 Abstract: EQUIVALENT MPS2907A AYWW marking code IC MPS2907A MPS2907A-D MPS2907ARL1G MPS2907ARLG MPS2907ARLRA MPS2907ARLRAG MPS2907ARLRE Text: MPS2907A Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage	Original	PDF	MPS2907A MPS2907A/D mps2 EQUIVALENT MPS2907A AYWW marking code IC MPS2907A MPS2907A-D MPS2907ARL1G MPS2907ARLG MPS2907ARLRA MPS2907ARLRAG MPS2907ARLRE
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Text: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10147 is a 10 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 58% efficiency and 16.5 dB of gain. Nitride surface passivation and full gold metallization	Original	PDF	P4525-ND P5182-ND 1-877-GOLDMOS 1301-PTF 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
AT41400 Abstract: ad 156 transistor maximum gain 33 at 2.0 ghz Text: m H EW LETT PACKARD AT-f 1400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Features • • • Chip Outline Low NoiseFigure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High AssociatedGain: 14.5 dB typical at 2.0 GHz 10.5 dB typical at 4.0 GHz	OCR Scan	PDF	AT-41400 metal12 AT41400 ad 156 transistor maximum gain 33 at 2.0 ghz
FZH 161 Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171 Text: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency	OCR Scan	PDF	AT-31625 OT-223 AT-31625 5965-5911E FZH 161 FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
HXTR-3685 Abstract: HXTR-3686 HXTR3685 HXTR 3685 Text: Whpì HEWLETT ll'/ U PACKARD Low Cost General Purpose Transistors Technical Data HXTR-3685 HXTR-3686 F eatures HXTR-3685 HXTR-3686 HXTR-3685 « Low Noise Figure: 1.8 dB Typical at 1 GHz • High Gain: 16.4 typ ical at 1 GHz at Noise Figure Bias • Low Cost Plastic Package	OCR Scan	PDF	HXTR-3685 HXTR-3686 HXTR-3685 HPAC-85 HPAC-86 HXTR-3686 HXTR3685 HXTR 3685
npn, transistor, sc 107 b Abstract: 2sc low noise NF TRANSISTOR Text: 2SC3838K 2SC4083 Transistor, NPN Features Dimensions Units : mm • • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages 2SC3838K (SMT3) package marking: JO — 2SC3838K; AD^, where ★ is hFE code Lj — 2SC4083; 1D-*, where ★ is hFE code	OCR Scan	PDF	2SC3838K 2SC4083 SC-59) SC-70) 2SC3838K; 2SC4083; 2SC3838K 2SC40 2SC3838K, 2SC4083 npn, transistor, sc 107 b 2sc low noise NF TRANSISTOR

BLX14 Abstract: SOT-48 BLX88 BLX66 BLY93 BLY94 BLY33 BLY34 2N3375 810BLY transistor Text: Transistors n-p-n r.f. power transistors book 1 parts 1 and 2 - § Type No. Maximum Ratings ^b o v ceo cm ° K hFE 'ciav I ® £ % T at Ptot m in - m a x - lc f r VcE sat> m ' n* m a x - at 'c Po ,8 *• GP at ty p . f at V cc Tm£ “ (V) (V) IA)	OCR Scan	PDF	810BLY/A 8LX13 BLX14 BLY33 BLY34 h--22-> crt6-25 SOT-48 BLX88 BLX66 BLY93 BLY94 2N3375 810BLY transistor
TLP127F Abstract: No abstract text available Text: TLP127 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA PROGRAMMABLE CONTROLLERS DC-OUTPUT MODULE TELECOMMUNICATION The TOSHIBA MINT FLAT COUPLER TLP127 is a nmnll outline coupler, suitable for surface mount assembly. TLP127 consists of a gallium arsenide infrared emitting	OCR Scan	PDF	TLP127 TLP127 2500Vrms TLP127F
2222A Abstract: No abstract text available Text: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.	OCR Scan	PDF	AT-31625 OT-223 AT-31625 1997H 5965-5911E 2222A
RF522 Abstract: MRF524 MRF521 mrf522 RF521 Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MRF521 MRFC521 M RF522 M R F524 M RF5211L The RF Line PIMP S ilico n H igh-Frequency Transistors . . . d e s ig n e d p r im a r ily f o r us e in th e h ig h - g a in , lo w * n o is e s m a ll-s ig n a l a m p lifie r s fo r	OCR Scan	PDF	MRF521 MRFC521 RF522 RF5211L MRF524 mrf522 RF521
2SC2340 Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857 Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers	OCR Scan	PDF	L427414 r-33-0S NE568 NE56800 operate-69 2SC2340 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
internal circuit of UM3561 Abstract: Siren Sound Generator circuit diagram UM3561 um3562 UM3561 pin diagram Siren Sound Generator 4 sound UM3561 Siren Sound Generator 5 sound siren police diagram Siren Sound Generator transistor UM3561 Text: UNICORN MICROELECTRONICS E4E » • ia7fl?fiö 0001543 1 ■ T - 17^13 U M 3561 Three Siren Sound Generator Features ■ A magnetic speaker can be driven by connecting an ■ Four sounds can be selected NPN transistor ■ Typical 3V operating voltage ■ Power on reset	OCR Scan	PDF	UM3561 UM3561 2SC9013 T27fl DGD154ti- VssSEL20SC2 UM3S61 internal circuit of UM3561 Siren Sound Generator circuit diagram um3562 UM3561 pin diagram Siren Sound Generator 4 sound UM3561 Siren Sound Generator 5 sound siren police diagram Siren Sound Generator transistor UM3561
AVANTEK MSA-0885 Abstract: L35C MSA-0885 MSA0885 RF power transistor Text: a v a n te k M S A -0885 M O D A M P C a sc ad ab le S ilico n B ip olar M o n o lith ic M icro w ave Integrated C irc u it A m p lifiers Avantek 85 Plastic Package Features • • • • .020 .51 Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz	OCR Scan	PDF	MSA-0885 MSA-0885 AVANTEK MSA-0885 L35C MSA0885 RF power transistor
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	PDF	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
SFT212 Abstract: SFT213 SFT214 at450 AT1138 SF.T214 2N1455 22OU0 SFT239 2n1014 Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	PDF	NPN110. B134B B10144 B10144A B10144B 300kt CTP1117 CTP1127 300ki SFT212 SFT213 SFT214 at450 AT1138 SF.T214 2N1455 22OU0 SFT239 2n1014
2SK2777 Abstract: No abstract text available Text: T O S H IB A 2SK2777 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2777 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-220FL APPLICATIONS	OCR Scan	PDF	2SK2777 2SK2777

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AD 153 TRANSISTOR Search Results

AD 153 TRANSISTOR Result Highlights (5)

AD 153 TRANSISTOR Datasheets Context Search

Untitled

AN-994

irf 1830

MGY30N60D

p2f sot-223

transistor ph-42

transistor ph-42

2N1174

mps2

2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

AT41400

FZH 161

HXTR-3685

npn, transistor, sc 107 b

BLX14

TLP127F

2222A

RF522

2SC2340

internal circuit of UM3561

AVANTEK MSA-0885

aeg diode Si 61 L

SFT212

2SK2777