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    IRGS30B60K Price and Stock

    Infineon Technologies AG AUIRGS30B60K

    IGBT 600V 78A 370W D2PAK
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    Infineon Technologies AG IRGS30B60KPBF

    IGBT 600V 78A 370W D2PAK
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    Infineon Technologies AG IRGS30B60KTRRP

    IGBT 600V 78A 370W D2PAK
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    IRGS30B60KTRRP Digi-Reel 1
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    Infineon Technologies AG AUIRGS30B60KTRL

    IGBT 600V 78A 370W D2PAK
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    International Rectifier IRGS30B60KTRRP

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    Bristol Electronics IRGS30B60KTRRP 6
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    IRGS30B60K Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGS30B60K International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGS30B60K International Rectifier 600V UltraFast 10-30 kHz IGBT in a D2-Pak package; A IRGS30B60K with Standard Packaging Original PDF
    IRGS30B60K International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRGS30B60KPBF International Rectifier 600V UltraFast 10-30 kHz IGBT in a D2-Pak package; Similar to IRGS30B60K with Lead Free Packaging Original PDF
    IRGS30B60KPBF International Rectifier Original PDF
    IRGS30B60KTRRP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 78A 370W D2PAK Original PDF

    IRGS30B60K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf 1830

    Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
    Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994. irf 1830 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K

    irgb30b60kpbf

    Abstract: C-150 IRGS30B60K IRGSL30B60K IRL3103L
    Text: PD - 95356 IRGB30B60KPbF IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		PDF IRGB30B60KPbF IRGS30B60K IRGSL30B60K O-220 O-220AB IRGB30B60KPbF O-262 O-220AB C-150 IRGS30B60K IRGSL30B60K IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA


    Original     		PDF IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB

    AN-994

    Abstract: C-150 IRGSL30B60K
    Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA


    Original     		PDF IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB AN-994 C-150 IRGSL30B60K

    SL30B60K

    Abstract: C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3
    Text: PD - 94741 IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 150°C.


    Original     		PDF IRGS30B60K IRGSL30B60K O-262 AN-994. SL30B60K C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3

    irf 1830

    Abstract: C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K
    Text: PD - 94799 IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994. irf 1830 C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K

    Untitled

    Abstract: No abstract text available
    Text: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA


    Original     		PDF IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 O-220AB AN-994.

    AN-994

    Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
    Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter