AG 28 LZ Search Results

LH5164

Abstract: LH 192 lh5164 - 12
Contextual Info: CMOS 64K 8K x 8 Static RAM FEATURES PIN CONNECTIONS • 8,192 x 8 bit organization 28-PIN SOP TOP VIEW • Access time: 500 ns (MAX.) NCC 1• •N 28 A12C 2 27 □ a 7[= 3 26 □ c e 2 Agd 4 25 □ Ag ASC a4C 5 24 □ Ag 6 23 □ A i , a 3d 7 22 □ 5 Ë

Contextual Info: CMOS 64K 8K x 8 Static RAM FEATURES PIN CONNECTIONS • 8,192 x 8 bit organization T O P V IE W 2 8 -P IN S O P • Access time: 200 ns (MAX.) f 'S 28 A 12 E 2 27 □ W E a7C 3 26 □ c e 2 Ag IZ 4 25 □ A 8 5C 5 24 Z I Ag a 10.8 |iW (MAX.) @ 85°C Data retention:

CIH05T

Contextual Info: Multilayer High Frequency Inductor CIH Series CIH05 1005 / EIA 0402 CIH Series has dielectric material and 100% Ag as an internal conductor Therefore, it has high Q and lZl at high frequency. It is possible to use for high frequency over 100MHz. FEATURES

CIH05T

Abstract: CIH05 CIH05T3N3S CIH05T2N7S
Contextual Info: Multilayer High Frequency Inductor CIH Series CIH05 1005 / EIA 0402 CIH Series has dielectric material and 100% Ag as an internal conductor Therefore, it has high Q and lZl at high frequency. It is possible to use for high frequency over 100MHz. FEATURES

Contextual Info: Multilayer High Frequency Inductor CIH Series CIH05 1005 / EIA 0402 CIH Series has dielectric material and 100% Ag as an internal conductor Therefore, it has high Q and lZl at high frequency. It is possible to use for high frequency over 100MHz. FEATURES

Contextual Info: CMOS 1M 128K x 8 Mask-Programmable ROM PIN CONNECTIONS FEATURES • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) 32-PIN DIP 32-PIN SOP TOP VIEW NCC 1• \ 32 □ Vcc A ig lZ 2 31 □ NC / • Power consumption: Operating: 192.5 mW (MAX.)

CIH03

Abstract: 2202N
Contextual Info: Multilayer High Frequency Inductor CIH Series CIH03 0603 / EIA 0201 CIH Series has dielectric material and 100% Ag as an internal conductor Therefore, it has high Q and lZl at high frequency. It is possible to use for high frequency over 100MHz. FEATURES

Contextual Info: TopTech Semiconductors. Siemens DK> Siemens AG Österreich Postfach 326 1031 Wien 8 (01 71711-5661 El 1372-10 Fax (01) 71711-5973 Siemens Ltd., Head Office 544 Church Street Richmond (Melbourne), Vie. 3121 S (03) 4207111 02 30425 Fax (03) 4 2072 75 Siemens AG

LORA 5-PIN

Abstract: cmos usb ip camera sy 6551
Contextual Info: SHARP SPEC No. C C 1 1 C> Q 0 5 I S S U I : June; 30 13SJS To ; ¿ÎJ.A i*i SPECIFICATIONS Product Type : l/4~typ^ C M S Color Area Sensor y.iîh Z ïïk P U ? h for VGA Model No. LZ3 4 B1 0 S&This specifications contains 28 pages including the cover. If you have any objections, please contact us before issuing purchasing order.

LZ34B10

Abstract: hx-nl
Contextual Info: SHARP SPEC No. C C 1 1 C> Q 0 5 I S S U I : June; 30 13SJS To ; ¿ÎJ.A i*i SPECIFICATIONS Product Type : l/4~typ^ C M S Color Area Sensor y.iîh Z ïïk P U ? h for VGA Model No. LZ3 4 B1 0 S&This specifications contains 28 pages including the cover. If you have any objections, please contact us before issuing purchasing order.

20ag

Abstract: MINI CKTS 5569-24A 5569-NAI SD-5569-002 mini FIT
Contextual Info: 10 > Ì b3 : 5557 V ' J - X MATES •:v$- W ITH \yy 2 fi igra PIN IN C A S E ■ 5557 S E R IE S B 4.2 OF M A T E R IA L 2 & RNG. C IR C U IT S HEADER, T H IS HEADER M A T E R IA L □ > NYLON 6 6 66, -N A I-2 I0 NYLON t < -N A G D NYLON 66, V 6 N 2 \y y œ > y y ^

9-14110

Contextual Info: DRAM MODULES KMM5401000A/AG/AM 1 M X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: tR A C * * * * * * * tC A C The Samsung K M M 5401000A is a 1M bits X 40 Dynamic RAM high density memory module. The Sam­ sung K M M 5401000A consist of ten CMOS 1M X 4

LQ070y3dg1a

Abstract: LQ0DDB5368 2281 led driver LZ9FC23 LQ0DDB5367 LQ0DDB5399 IR3E3076 LR38825 LQ0DDB5464 LQ043T3DX02
Contextual Info: Key Features RoHS Mechanical Part Number LQ022B8UD05 LQ025Q3DW02 LS028B7UX01 Resolution QCIF+ WQVGA WQVGA A A A Status LQ035Q7DH07 LQ036Q1DA01 LS037V7DW01 LS037V7DW03 LQ038Q3DC01 LQ038Q7DB03R QVGA QVGA QVGA QVGA/VGA QVGA/VGA QVGA QVGA B MP 1Q09 A A A A Upgraded DH01

marking code SOT23 SSi

Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 code marking ssi sot-23
Contextual Info: i Thaïï HEW LETT mLfiM PA C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features • High Perform ance Bipolar T ransistor Optimized for Low Current, Low Voltage O peration • 900 MHz Performance:

5569-NA

Abstract: 5569-24A 22AG MINI CKTS 5569-NAI mini FIT 5569-02A en-02ja SD-5569-002 5569-24AG
Contextual Info: 10 > Ì b3 : 5557 V ' J - X M A T E S WITH • 5 5 5 7 S E R IE S ■ :v$ - \yy 2 fi ig ra PIN IN C A S E OF 2 C IR C U ITS H E AD E R , T H IS DIMENSION SHOULD BE 4.2mm. B 4.2 M A T E R IA L & FINISH RNG . NO. ^ < □ > 6 5569-NA ‘ 3.4 - N A I- 2 I0 ,

Contextual Info: Electronic C om ponents B— 8 Vertrieb Deutschland Ihm Ansprechpartner im Verkauf Vertrieb Deutschland Hersteller Verkauf: Anke Wolter Tel.: 0 23 51 / 5 54-114 Fax: 0 23 51 / 5 54-139 Customer Service: Beate Penninger Tel.: 0 23 51 / 5 54-115 Fax: 0 23 51 / 5 54-139

Countdown circuit

Abstract: TV SIGNAL PROCESSOR M52771
Contextual Info: MITSUBISHI ICs TV M52771 SP NTSC/PAL TV SIGNAL PROCESSOR DESCRIPTION The M 52771SP is a single chip CTV processor which has VIF/SIF, luminance, chrom inance, m ono sound, OSD display, PIN CONFIGURATION (TOP VIEW) RGB interface, and deflection. And it is possible to control each param eters by lzC bus. A

Contextual Info: IIIIIC F IT R U rS T SEMI CONDUCTOR • ■ III C A T 28 C 17 A / C A T 28 C 17A I 16K-Bit CMOS E2PROM FEATURES ■ Fast Read Access Times: 200 ns ■ End of Write Detection: -DATA Polling -RDY/BUSY Pin ■ Low Power CMOS Dissipation: -Active: 25mA Max. -Standby: 100p.A Max.

S028

Abstract: SSOP16 SSOP20 SSOP28 UBA1707 UBA1707T UBA1707TS state machine diagram for axi bridge
Contextual Info: P hilips S em ico n d u cto rs O b jective sp ecification Cordless telephone, answering machine line interface • AGC: FEATURES Line in terface • Low DC line voltage; operates down to 1.2 V excluding polarity guard - O n/off - Slope - Istart line current.

MSM486V500

Abstract: Cyrix 486slc TI486SXLC2 80386 microprocessor interface keyboard monitor floppy disk interface 80486SLC 486SLC msm486v 10.1 inch lcd with led backlight 40 pin connector pinout 29F040
Contextual Info: TECHNICAL USER’S MANUAL FOR: PC/104 MSM486V R:\HANDBUCH\MSM\MSM486V.DOC Nordstrasse 4F, CH-4542 Luterbach Tel.: +41 0 32 681 53 36 - Fax: +41 (0)32 681 53 31 DIGITAL-LOGIC AG MSM486V Manual V3.22 COPYRIGHT  1992-95 BY DIGITAL-LOGIC AG No part of this document may be reproduced, transmitted, transcribed, stored in a retrieval system, in

A1SH

Abstract: 32DIP 32-PIN LH532100B-1 A14C
Contextual Info: LH532100B-1 FEATURES CMOS 2M 256K x 8 Mask-Programmable ROM PIN CONNECTIONS • 262,144 words x 8 bit organization • Access time: 120 ns (MAX.) 32-PIN DIP 32-PIN SOP TOP VIEW f \ O E ^ O E i/D C C • Static operation • TTL compatible I/O • Three-state outputs

L D O Device Name 23 330 A1 6C

Abstract: sharp 8mbit rom
Contextual Info: LH538P00B FEATURES • 1,048,576 words x 8 bit organization Byte mode 524,288 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 330 mW (MAX.) Standby: 550 (iW (MAX.) • Static operation • TTL compatible I/O

Contextual Info: KMM5402000A/AG DRAM MODULES 2 M X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5402000A is a 2M bits X 40 Dynamic RAM high density memory module. The Sam­ sung KM M 5402000A consist of twenty CMOS 1M X 4

KMM5361000

Abstract: "soj 26" dram 80 ns G392
Contextual Info: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361 OOOA is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KMM5361 OOOA consist of eight CMOS 1MX4 bit