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    Samsung Semiconductor KMM5361003B-7

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    Samsung Semiconductor KMM5361003C-7

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    Samsung Semiconductor KMM5361000B-7

    MEMORY MODULE,DRAM,FAST PAGE,1MX36,CMOS,SSIM,72PIN,PLASTIC
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    Quest Components KMM5361000B-7 1
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    Others KMM5361203C2W6

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    Chip 1 Exchange KMM5361203C2W6 398
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    KMM5361 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM5361203C2W-5 Samsung Electronics 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh Original PDF
    KMM5361203C2W-6 Samsung Electronics 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh Original PDF
    KMM5361203C2WG Samsung Electronics 1m x 36 Dram Simm Using 1Mx16 and 1mx4 Quad Cas 1k Refresh Original PDF
    KMM5361203C2WG-5 Samsung Electronics 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh Original PDF
    KMM5361203C2WG-6 Samsung Electronics 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh Original PDF
    KMM5361205C2W-5 Samsung Electronics 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh, Original PDF
    KMM5361205C2WG Samsung Electronics 1m x 36 Dram Simm Using 1Mx16 and 4m Quad Cas Edo 1k Refresh Original PDF
    KMM5361205C2WG-5 Samsung Electronics 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh, Original PDF
    KMM5361205C2WG-6 Samsung Electronics 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh, Original PDF
    KMM53616000BK-6 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    KMM53616000BKG-5 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    KMM53616000BKG-6 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    KMM53616000CK-5 Samsung Electronics Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    KMM53616000CK-6 Samsung Electronics Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    KMM53616000CKG Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh 5V Original PDF
    KMM53616000CKG-5 Samsung Electronics Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    KMM53616000CKG-6 Samsung Electronics Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    KMM53616004BK-5 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    KMM53616004BK-6 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF
    KMM53616004BKG-5 Samsung Electronics 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V Original PDF

    KMM5361 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KMM53616000BK

    Abstract: KMM53616000BKG
    Text: DRAM MODULE KMM53616000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.


    Original     		PDF KMM53616000BK/BKG KMM53616000BK/BKG 16Mx4 16Mx1, KMM53616000B 16Mx36bits 16Mx4bits 16Mx1bit KMM53616000BK KMM53616000BKG

    KMM5361203C2W

    Abstract: KMM5361203C2WG km416c1200 KM44C1003
    Text: DRAM MODULE KMM5361203C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361203CW/CWG to KMM5361203C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE


    Original     		PDF KMM5361203C2W/C2WG KMM5361203CW/CWG KMM5361203C2W/C2WG 1Mx16 KMM5361203C2W 1Mx36bits 1Mx16bits KMM5361203C2WG km416c1200 KM44C1003

    KMM53616000CK

    Abstract: KMM53616000CKG
    Text: DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616000CK/CKG DRAM MODULE KMM53616000CK/CKG


    Original     		PDF KMM53616000CK/CKG 16Mx36 16Mx4 16Mx1 KMM53616000CK/CKG 16Mx1, KMM53616000C KMM53616000CK KMM53616000CKG

    1MX16

    Abstract: KMM5361203C2W KMM5361203C2WG
    Text: DRAM MODULE KMM5361203C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5361203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361203CW/CWG to KMM5361203C2W/C2WG caused by PCB revision .


    Original     		PDF KMM5361203C2W/C2WG 1Mx36 1MX16 KMM5361203CW/CWG KMM5361203C2W/C2WG KMM5361203C2W KMM5361203C2WG

    1MX16

    Abstract: KMM5361205C2W KMM5361205C2WG
    Text: DRAM MODULE KMM5361205C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5361205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361205CW/CWG to KMM5361205C2W/C2WG caused by PCB revision .


    Original     		PDF KMM5361205C2W/C2WG 1Mx36 1MX16 KMM5361205CW/CWG KMM5361205C2W/C2WG KMM5361205C2W KMM5361205C2WG

    16Mx4bit

    Abstract: KMM53616004BK KMM53616004BKG
    Text: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs


    Original     		PDF KMM53616004BK/BKG KMM53616004BK/BKG 16Mx4 16Mx1, KMM53616004B 16Mx36bits 16Mx4bits 16Mx1bit 72-pin 16Mx4bit KMM53616004BK KMM53616004BKG

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit


    OCR Scan     		PDF KMM5361000A/AG Q014Sh4 361000A bitsX36 20-pin 72-pin 361000A- 130ns

    KMM5361000/A

    Abstract: No abstract text available
    Text: SAMSUNG E LECTRONI CS INC b4E T> • TTbMlMS G 01 4 57 5 KMM5361OOOA1/A1G DhD DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5361000A1 consist of eight CMOS 1M x4 bit


    OCR Scan     		PDF KMM5361OOOA1/A1G KMM5361000A1 20-pin 72-pin KMM5361000A1-7 130ns M5361OOOA1 150ns KMM5361000/A

    Untitled

    Abstract: No abstract text available
    Text: KM M5361000B1 /B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000B1 is a 1M bits x 36 Dynamic RAM KMM5361000B1-6 tR A C tcA c tn c 60ns 15ns 110ns high density memory module. The Sam sung


    OCR Scan     		PDF M5361000B1 KMM5361000B1 KMM5361000B1 KMM5361000B1-6 KMM5361000B1-7 KMM5361000B1-8 110ns 130ns 150ns 20-pin

    KM44C1000CJ

    Abstract: KMM5361000C
    Text: DRAM MODULE 4 Mega Byte KMM5361000C2/C2G Fast Page Mode 1Mx36 DRAM SIMM Using Parity PLCC, 5V G EN E R A L D ESCRIPTIO N FEATURES The Samsung KMM5361000C2 is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361000C2 consists of eight CMOS


    OCR Scan     		PDF KMM5361000C2/C2G 1Mx36 KMM5361000C2 20-pin 18-pin 72-pin KM44C1000CJ KMM5361000C

    KMM5361205BWG

    Abstract: No abstract text available
    Text: Preiminary DRAM MODULE KMM5361205BW/BWG KMM5361205BW/BWG Fast Page Mode with Extended Data Out 1Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENER AL DESC RIPTIO N FEATURES The Sam sung KM M 5361205BW is a 1M bit x 36 • Part Identification


    OCR Scan     		PDF KMM5361205BW/BWG KMM5361205BW/BWG 1Mx36 5361205BW 5361205B 1Mx16 42-pin 24-pin 72-pin KMM5361205BWG

    km44c1003cj

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5361203AW/AWG KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361203AW consists of two CMOS


    OCR Scan     		PDF KMM5361203AW/AWG KMM5361203AW/AWG 1Mx36 1Mx16 KMM5361203AW 42-pin 24-pin 72-pin KMM5361233AW km44c1003cj

    Untitled

    Abstract: No abstract text available
    Text: KMM5361000 DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5361000 is a 1M bits X 36 Dynamic RAM high density memory module. The Samsung KM M 5361000 consist of eight CMOS 1M X 4 bit DRAMs


    OCR Scan     		PDF KMM5361000 20-pin 72-pin 100ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G E L E C T R O N I C S INC b7 E D • 7 Tb4142 KMM5361000B/BG 0015150 SGÖ H i S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5361000B is a 1M bits x 36 Dynam­ ic RAM high density memory module. The Samsung


    OCR Scan     		PDF Tb4142 KMM5361000B/BG KMM5361000B 20-pin 72-pin 110ns KMM5361000B-7 130ns

    0015142

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 7 E ]> • DDS I SHGK 7 *b4 1 4 E D 0 1 5 1 4 0 KMM5361000B2/B2G DRAM MODULES 1M x36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tRAC tcAC tRC KM M5361000B2-6 60ns 15ns 110ns KMM5361000B2-7 70ns 20ns


    OCR Scan     		PDF KMM5361000B2/B2G M5361000B2-6 110ns KMM5361000B2-7 130ns M5361000B2-8 150ns M5361000B2 5361000B2 20-pin 0015142

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Sam sung KM M 5361203BW is a 1M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5361203BW/BWG KMM5361203BW/BWG 1Mx36 1Mx16 5361203BW KMM5361203BW cycles/16m KMM5361203BW

    KMM5361000

    Abstract: KMM5361000/A
    Text: SAMSUNG ELECTRONICS INC 42E ]> • T ^ b M m s GülGSlb Ô KMM5361000 DRAM MODULES 'T - % iï~ n 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000 is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5361000 KMM5361000 bitsX36 20-pin 72-pin 150ns KMM5361000-10 KMM5361000- KMM5361000/A

    km44c1003cj

    Abstract: No abstract text available
    Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN E R A L D ESCRIPTIO N The Samsung KMM5361203BW is a 1M bit x 36 Dynamic RAM high density memory module. The FEATURES


    OCR Scan     		PDF KMM5361203BW/BWG KMM5361203BW/BWG 1Mx36 1Mx16 KMM5361203BW 42-pin 24-pin 72-pin km44c1003cj

    KMM5361000

    Abstract: "soj 26" dram 80 ns G392
    Text: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361 OOOA is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KMM5361 OOOA consist of eight CMOS 1MX4 bit


    OCR Scan     		PDF KMM536100QA/AG/A1 KMM5361 bitsX36 20-pin 72-pin KMM5361000 "soj 26" dram 80 ns G392

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5361203C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5361203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361203CW /CWG to KMM5361203C2W /C2W G caused by PCB revision .


    OCR Scan     		PDF KMM5361203C2W/C2WG 1Mx36 1MX16 KMM5361203CW KMM5361203C2W KMM5361203C2W/C2WG 5361203C2W

    KM44C1000CJ

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5361000CH Fast Page Mode 1Mx36 DRAM SIMM with ECC, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5361000CH is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361000CH consists of nine CMOS • Performance Range:


    OCR Scan     		PDF KMM5361000CH 1Mx36 20-pin 72-pin KM44C1000CJ

    Q022B

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53616000AKG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G EN ER AL DESCR IPTIO N FEATURES The Samsung KMM53616000AK is a 16M bit x 36 Dynamic RAM high density memory module. The • Part Identification


    OCR Scan     		PDF KMM53616000AKG KMM53616000AK 16Mx36 16Mx4bit 32-pin 16Mx1bit 24-pin 72-pin Q022B

    KMM366F213BK6

    Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/KMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7


    OCR Scan     		PDF 2Mx36 4Mx32 8Mx32 KMM374F4l KMM374F410BK-6 8Mx64 MM366F883AK-5_ KMM366F883AK-6 KMM366F803AK-5 KMM374F KMM366F213BK6 KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12

    km44c16104ak

    Abstract: 44c16104
    Text: DRAM MODULE KMM53616004AK/AKG KMM53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs


    OCR Scan     		PDF KMM53616004AK/AKG KMM53616004AK/AKG 16Mx4 16Mx1, 3616004A 16Mx36bits M53616004AK cycles/64ms M53616004AKG km44c16104ak 44c16104