AI00738B Search Results

11PROGRAMMING

Abstract: 4606 IC circuit diagram ad 4606 m27c512 PLCC32 J-STD-020B M27C512 PDIP28 PLCC32 EPROM M27C512
Contextual Info: M27C512 512 Kbit 64K x8 UV EPROM and OTP EPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V

M27C512

Abstract: M27V512 M27W512 PDIP28 PLCC32
Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

FAH10

Abstract: gvrp jl m27c512 1N914 M27C512 M27V512 PLCC32 VA10
Contextual Info: r Z J S G S -T H O M S O N ^ 7 w . lMD § @liIUI®in3 R0]©l M27V512 LOW VOLTAGE 512K (64K x 8 OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 10mA - Standby Current 10|xA

AN-620

Abstract: m27c512 equivalent eprom programming
Contextual Info: AN620 APPLICATION NOTE ON-BOARD PROGRAMMING OF OTP EPROM by Franco MORANDI In recent years interest has been growing in On-Board Programming of OTP EPROM memories. There are two main factors which have stimulated this interest: the growth of the FLASH Memory market and the

M27V512

Abstract: M27W512 PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V512 is replaced by the M27W512 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: 28 28 – Active Current 10mA at 5MHz ■

TM27C512

Contextual Info: _ M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

M27V512

Abstract: PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: – Active Current 10mA at 5MHz 28 28 – Standby Current 10µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

M27C512

Abstract: PDIP28 PLCC32 m27c512 PLCC32 DSA009463 ST m27c512 AN620 datasheet
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES of AROUND 6sec.

Contextual Info: M27W512 512 Kbit 64Kb x 8 Low Voltage OTP EPROM LOW VOLTAGE READ OPERATION: 2.7V to 3.6V FAST READ ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V PIN COMPATIBLE with M27C512 LOW POWER CONSUMPTION: – 15µA max Standby Current

NS1051

Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27V512

Abstract: M27W512 PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V512 is replaced by the M27W512 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: 28 28 – Active Current 10mA at 5MHz 1

M27C512

Abstract: PDIP28 PLCC32
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

M27C512

Abstract: PDIP28 PLCC32
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

SGS M27C512

Abstract: EPROM M27C512 M27C512 SGS-THOMSON M27C512 PDIP28 PLCC32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP ROM VERY FAST ACCESS TIME: 60ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27C512

Abstract: PDIP28 PLCC32 m27c512 PLCC32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

27C512

Abstract: ST m27c512 ST M27C512-12F1 Q0822 m27c512-12f M27C512-12F3 M27C512-15F1 M27C512-70XF1 L 15F6 EPROM M27C512
Contextual Info: M27C512 512 Kbit 64K x8 UV EPROM and OTP EPROM Features • 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consumption: – Active current 30 mA – Standby current 100 µA ■ Programming voltage: 12.75 V ± 0.25 V

nm27c512a

Abstract: M27C51290B M27C512 M27C512-15F1 ST m27c512
Contextual Info: M27C512 512 Kbit 64K x8 UV EPROM and OTP EPROM Features • 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consumption: – Active current 30 mA – Standby current 100 µA ■ Programming voltage: 12.75 V ± 0.25 V

m27c512 PLCC32

Abstract: M27C512 PDIP28 PLCC32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

Contextual Info: £ ÿ j SGS'THOMSON Q tiM S iM tê M M 27V512 LOW VOLTAGE 512K 64K x 8 OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns - LOW POWER "CMOS” CONSUMPTION: - Active Current 10mA - Standby Current 10|xA ■ PROGRAMMING VOLTAGE: 12.75V

Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION: – Active Current 10mA at 5MHz – Standby Current 10µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

M27V512

Abstract: M27W512 PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V512 is replaced by the M27W512 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: 28 28 – Active Current 10mA at 5MHz ■

AI00738B

Contextual Info: M27W512 512 Kbit 64Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST READ ACCESS TIME: - 90ns at Vcc = 3.0V to 3.6V - 100ns at Vcc = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C512 ■ LOW POWER CONSUMPTION: - 15(xA max Standby Current

PLCC32

Abstract: va10 datasheet M27C512 M27W512 1N914
Contextual Info: M27W512 VERY LOW VOLTAGE 512K 64K x 8 OTP ROM VERY LOW VOLTAGE READ OPERATION: 2.7V to 5.5V ACCESS TIME: – 150ns (TA = 0 to 70 °C) – 200ns (TA = –20 to 70 °C) LOW POWER ”CMOS” CONSUMPTION: – Active Current 10mA – Standby Current 10µA PROGRAMMING VOLTAGE: 12.75V

PLCC32

Abstract: Thomson capacitors lcc SGS M27C512 1N914 M27C512 M27V512
Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 OTP ROM LOW VOLTAGE READ OPERATION: 3V to 5.5V ACCESS TIME: 120, 150 and 200ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 10mA – Standby Current 10µA PROGRAMMING VOLTAGE: 12.75V PROGRAMMING TIMES of AROUND 6sec.