AJPS Search Results

alps ALP

Contextual Info: T 670 F Elektrische Eigenschaften - Electrical properties Maximum rated values t , = -40°C t ,max VDRMI t, =-40oc.t, VDS, = VDRM t , = + 25°C t ,max VWM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung

2N7224 JANTX

Abstract: 2N7224 JANTXV2N7224 IRFM150 JANTX2N7224
Contextual Info: Data Sheet No. PD-9.487C IOR INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR Zi N-CHANNEL IRFM150 SN7S84 JANTXSN7SS4 JAIMTXVSN7SS4 [ R E F : M I L - S - 1 9 S O O / S 9 2 ) Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: Data Sheet No. PD-9.881 II«R I INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHES13Q RAD HARD -100 Volt, 0.30», RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

sega mega drive

Abstract: phct sega mega drive RF IRH7230 IRH8230
Contextual Info: Data Sheet No. PD-9.678A INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED IRH7S30 HEXFET TRANSISTORS Q „ IRH8S30 N-CHANNEL MEGA RAD HARD 200 Volt, 0.400, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD Technology HEXFETk demonstrate excellent threshold voltage stability and breakdown

T188F

Contextual Info: T 188 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages t, = - 4 0 ° C t, max bRMv b,M Vorwärts-Stoßspitzensperrspannung

MTD7N20

Abstract: jw 521
Contextual Info: MOTOROLA SC XSTRS/R F EbE D b3b?5S4 GQIGISO 2 Order this data sheet by MTD7N20/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet MTD7N20 P o w e r Field E ffe c t T ra n sisto r N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S

2N6802 JANTX

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d es c rib e s 19 d ev ic e s , 12 N -C h a n n e l and 7 P -C h a n n e l, all c o n tain e d in the T 0 - 2 0 5 A F T O -3 9 p ac k a g e . This d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

din 40040 42

Abstract: DIN41814-151A4
Contextual Info: T 128 F Elektrische Eigenschaften Electrical properties iöchstzulässige Werte Aaximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages t, = -4oc.t”, VD, b,M Vorwärts-Stoßspitzensperrspannung

ABE 444

Abstract: n408 BA408 A96J 31A7
Contextual Info: ;~< @JTNJU \4JFVWTJU r@Md~ PU_\XMe 5 ,444 r6a`[ LQ^[ RaZO`U[Z MZP =[XP RaZO`U[Z r2EQSYQZ` ?:9 9U_\XMe r8M_Q _UfQ Ne 9>A _\QOURUOM`U[Z p >OJFUJ TJFI q1FWVNRQ KRT [RWT UFKJV[q NQ RSJTFVNRQ PFQWFO GJKRTJ WUNQLx \=TIJTNQL NQKRTPFVNRQ o BA QKHO ICOCM 2 BA ?ILCMC ICOCM

SOC50

Abstract: DIN41814-151A4
Contextual Info: T 128 F Elektrische Eigenschaften Electrical properties iöchstzulässige Werte Aaximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages t, = -4oc.t”, VD, b,M Vorwärts-Stoßspitzensperrspannung

HFA06TB60

Abstract: HFA08TB60 diode hfa08tb60 revers characteristic transistor revers characteristic ir 908c SL-2341 32
Contextual Info: PD-2.341 International \1QRIRectifier HEXFRED Provisional Data Sheet HFA08TB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Features; Units Vr V r rm 600 V If a v 6 A trr (typ) 18 ns On- (typ) 65 Jrrm difrec)M/dt (tvoi

hv102

Abstract: transistor STHV102 ctv circuit diagram transistor AJPS 609 transistor
Contextual Info: SGS-THOMSON HD K ô iLi(gU (ô)[MD(gi S T H V 102 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STHV102 • • • • V DSS ^DS(on) 1000 V 3.5 fl Id 4.2 A 1000 V - VERY HIGH VOLTAGE FOR SMPS EASY DRIVE - REDUCED COST AND SIZE

t188f

Contextual Info: T 188 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages t, = - 4 0 ° C t, max bRMv b,M Vorwärts-Stoßspitzensperrspannung

260O

Contextual Info: T 821 S Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert

T188F

Abstract: RHL2
Contextual Info: T 188 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages t, = - 4 0 ° C t, max bRMv b,M Vorwärts-Stoßspitzensperrspannung

Contextual Info: TOR IRFE Series Devices IRFE Series Data Sheet The IRFE Data Sheet describes 19 devices, 12 N-Channel and 7 P-Channel, all contained in the LCC package. This data sheet is arranged to show common tabular and graphical information between devices. alphabetical order. W here the information is device

TRANSISTOR SMD MARKING CODE ag

Abstract: smd TRANSISTOR code AJ transistor marking smd 7c smd marking wds transistor smd marking AJ 7C SMD TRANSISTOR smd transistor marking AJ TRANSISTOR SMD MARKING CODE AJ
Contextual Info: SIEMENS SPNX2N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best Ffos on in SOT 223 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • d v/d t rated 1 2 ,4 3 • 150°C operating temperature G D S Type

CP24

Abstract: RQK210
Contextual Info: EUPEC S2E ]> 34032*17 DD0GÖ3G 514 « U P E C T1900N ' s Typenreihe/Type range T 1900 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vdrm, Vrrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchlaBstrom

hn745

Contextual Info: Data Sheet No. PD-9.819A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IR H N 745 0 IRHN845Q N-CHANNEL _MEGA RAD HARD 500 Volt, 0.45 2, MEGA RAD HARD HEXFET International Rectifier’s M EGA RAD HARD Technology

LPQ03

Contextual Info: TISP4072F3LP, TISP4082F3LP, TISP4125F3LP, TISP4150F3LP, TISP4180F3LP TISP4240F3LP, TISP4260F3LP, TISP4290F3LP, TISP4320F3LP, TISP4380F3LP Copyright 1997, Power Innovations Limited, UK NOVEMBER 1997 - REVISED DECEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

C258C

Contextual Info: 37E D SEHELAB LT» • 0133167 00005^7 7 ■ SMLB JAN 0 5 1988 S E S V 3E L A B 2N 6769 2N 6770 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I * - 1-6 APPLICATIONS '1 1 39.5 16.9 A 20.3 • SWITCHING REGULATORS 1 • CONVERTERS • MOTOR DRIVERS

alps 103

Abstract: T188F
Contextual Info: T 188 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages t, = - 4 0 ° C t, max bRMv b,M Vorwärts-Stoßspitzensperrspannung

Contextual Info: Haltestrom latching T 468 S Elektrische Eigenschaften Höchstzulässige Werte Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert Dauergrenzstrom

Contextual Info: EUPEC S2E ]> 34032*17 DD0GÖ3G 514 « U P E C T1900N ' s Typenreihe/Type range T 1900 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vdrm, Vrrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchlaBstrom