AL7 1BW Search Results

Contextual Info: NEW The easy to use, affordable and high quality desktop scanner for whole slide imaging. * The NanoZoomer series as medical devices may be subject to government regulations where they are used. Hamamatsu makes no representation with regard to the conformity of these products to these regulations. Please consult your local sales representative for more information.

SE 7889

Abstract: peltier cooler Peltier module L8413 LLD1007E01 AL7 1BW
Contextual Info: HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 Figure 1: Radiant Output Power vs. Forward Current Typ. Figure 2: Typical Emission Spectrum 100 RELATIVE RADIANT OUTPUT POWER (%) 30 Top=25℃ RADIANT OUTPUT POWER (W)

600 um laser fiber medical

Abstract: L929 Peltier element L9399 836 DIODE LLD1012E01 836 DIODE current "Peltier element" AL7 1BW CW Laser
Contextual Info: FIBER-OUTPUT CW LASER DIODES L9399 Figure 1: Radiant Output Power vs. Forward Current Typ. 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 ( Top(c) = 20 °C ) 100 Relative Radiant Output Power (%) Radiant Output Power Φe (W) Figure 2: Emission Spectrum (Typ.)

peltier cooler

Abstract: Peltier module 58520 L8413 808nm source photonics LLD1007E02 817 diode CW laser diode
Contextual Info: HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 Figure 1: Radiant Output Power vs. Forward Current Typ. RELATIVE RADIANT OUTPUT POWER (%) Top(c) = 20 °C 20 10 10 30 20 FORWARD CURRENT If (A) PRELIMINARY DATA

L8410

Abstract: L8412 LLD1009E01 E30W
Contextual Info: HIGH POWER CW LASER DIODE with WATER-COOLING, FUNRYU-COOLING L8410, L8412 HIGH POWER CW LASER DIODE with WATER-COOLING, FUNRYU-COOLING L8410, L8412 Figure 1: Radiant Output Power vs. Forward Current Typ. Figure 2: Typical Emission Spectrum 100 RELATIVE RADIANT OUTPUT POWER (%)

LD chip

Abstract: LLD1013E01
Contextual Info: CW LASER DIODES L9418 100 Relative Radiant Output Power % Radiant Output Power Φe (W) ( Top(c) = 25 °C ) ( Top(c) = 25 °C ) 1.5 1.0 0.5 0.5 Peak Emission Wavelength 980nm, Radiant Output Power 1W (CW) 60 FEATURES 40 Radiant output power (CW) : 1W Peak Emission Wavelength : 980 nm ± 3 nm

L8446

Abstract: L8446-04 L8446-06 LLD1010E01 CW laser diode
Contextual Info: INFRARED CW LASER DIODE L8446 SERIES Figure1 Radiant Output Power vs. Forward Current Typ. (Tc=25˚c) (Tc=25˚c) PRELIMINARY DATA 100 RELATIVE RADIANT OUTPUT POWER (%) 1.0 0.5 High optical power of 1W under CW operation 80 60 FEATURES High optical power : 1W

Ultrafast Photodetectors GMbh

Abstract: MSM photodetector photodetector G4176 G4176-01 G4176-02 G7096 G7096-01 G7096-02 VB10V
Contextual Info: ULTRAFAST InGaAs MSM PHOTODETECTORS G7096 SERIES Figure 1: Optical Pulse Response ULTRAFAST InGaAs MSM PHOTODETECTORS G7096 SERIES Figure 2: Spectral Response Including time response of light source, bias-tee and oscilloscope (VB=10V) (VB=10V) OUTPUT RADIANT SENSITIVITY (A/W)

L8412

Abstract: L8410 LLD1009E01
Contextual Info: HIGH POWER CW LASER DIODE with WATER-COOLING, FUNRYU-COOLING L8410, L8412 HIGH POWER CW LASER DIODE with WATER-COOLING, FUNRYU-COOLING L8410, L8412 Figure 1: Radiant Output Power vs. Forward Current Typ. Figure 2: Typical Emission Spectrum 100 RELATIVE RADIANT OUTPUT POWER (%)

SE 7889

Abstract: high power laser L8411 LLD1008E01
Contextual Info: HIGH POWER QUASI-CW LASER DIODE L8411 Figure 1: Radiant Output Power vs. Forward Current Low Duty Ratio Type Typ. Pulse Duration=200µs Frequency=50Hz 100 80 60 40 20 Pulse Duration=200µs Frequency=1KHz 60 FEATURES High optical power : 50 to 100W/bar in average

Ultrafast Photodetectors GMbh

Abstract: GaAs MSM MSM photodetector photodetector 850 nm G4176 G4176-01 G4176-02 LPRD1014E03 ultrafast photodetectors
Contextual Info: ULTRAFAST GaAs MSM PHOTODETECTORS G4176 SERIES Figure 1: Optical Pulse Response ULTRAFAST GaAs MSM PHOTODETECTORS G4176 SERIES Figure 2: Spectral Response Including time response of light source, bias-tee and oscilloscope (VB=7V) (VB=7V) 100 OUTPUT RADIANT SENSITIVITY (A/W)

L8411

Abstract: LLD1008E01
Contextual Info: HIGH POWER QUASI-CW LASER DIODE L8411 Figure 1: Radiant Output Power vs. Forward Current Figure 2: Radiant Output Power vs. Forward Current 100 120 Pulse Duration=200 s Frequency=1KHz RADIANT OUTPUT POWER W Pulse Duration=200μs Frequency=50Hz RADIANT OUTPUT POWER (W)

Contextual Info: Global Sales Offices U.S.A. Shindengen America, Inc. http://www.shindengen.com/ Head Office 161 Plaza La Vista, Camarillo, CA93010 U.S.A. Phone: +1-805-445-8420/800-634-3654 FAX: +1-805-445-8421 Chicago Office 2333 Waukegan Road. Suite 150 Bannockburn, IL60015 U.S.A.

transistor 1BW

Abstract: j 6910 Hamamatsu Hamamatsu Corporation 1bw transistor Hamamatsu Photonics H8025-126 1011E-01
Contextual Info: SENSOR HEAD FOR UV POWER METER H8025-126 SPECIFICATIONS Unit nm — mm °C Description/Value 126 Excimer lamp 6 0 to +45 Irradiance [100 nW/cm2 to 100 mW/cm2], Integrated optical power [1 nJ/cm2 to 12 J/cm2] auto range selection 55 W x 75 (D) × 18 (H) a cable is not included

j 6910

Abstract: Hamamatsu H8025-146 Hamamatsu Photonics uv sensor
Contextual Info: SENSOR HEAD FOR UV POWER METER H8025-146 SPECIFICATIONS Unit nm — mm °C Description/Value 146 Excimer lamp 6 0 to +45 Irradiance [100 nW/cm2 to 100 mW/cm2], Integrated optical power [1 nJ/cm2 to 12 J/cm2] auto range selection 55 W x 75 (D) × 18 (H) a cable is not included

Hamamatsu

Abstract: telephone transistor 1BW S2461 S2461-01 SE-171
Contextual Info: SSD Si strip detector S2461 series DC-coupled single-sided Si strip detector for particle tracking Features Applications l Large area l Low noise l Low dark current, excellent about bias voltage tolerance l S2461-01: PWB mount type • Specifications Parameter

transistor 1BW

Abstract: Hamamatsu 1bw equivalent 1bw semiconductor 1bw transistor EIA-604-10 L8958 L8958-11 C5983 LD connector SC
Contextual Info: LASER DIODE Laser diode L8958 series High output power: 1.5 mW, pigtail type Features L8958-11 Applications l Optical fiber communications l High output power: 1.5 mW l High-speed response: 1.25 Gbps Max. l 1.3 µm FP Fabry-perot laser • Absolute maximum ratings (Ta=25 °C)

scintillator

Abstract: S8193 SE-171 ceramic scintillator
Contextual Info: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms l Unlike CsI, has no deliquescence

scintillator

Abstract: S8193 SE-171 x-ray tube 026 950-S photodiode 011
Contextual Info: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features Applications l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms

Contextual Info: LASER DIODE Laser diode L8958 series High output power: 1.5 mW, pigtail type Features L8958-11 Applications l Optical fiber communications l High output power: 1.5 mW l High-speed response: 1.25 Gbps Max. • Absolute maximum ratings Ta=25 °C Parameter

Contextual Info: LASER DIODE Laser diode L8958 series High output power: 1.5 mW, pigtail type Features L8958-11 Applications l Optical fiber communications l High output power: 1.5 mW l High-speed response: 1.25 Gbps Max. l 1.3 µm FP Fabry-perot laser • Absolute maximum ratings (Ta=25 °C)

Contextual Info: PHOTODIODE Si photodiode S8559 Detector for X-ray monitor Features Applications l Si photodiode coupled to low cost CsI scintillator l Ideal for detection of X-ray energy below 100 keV l X-ray detection l X-ray monitors • Absolute maximum ratings Ta=25 °C

scintillator

Abstract: S8559 x-ray tube SE-171
Contextual Info: PHOTODIODE Si photodiode S8559 Detector for X-ray monitor Features Applications l Si photodiode coupled to low cost CsI scintillator l Ideal for detection of X-ray energy below 100 keV l X-ray detection l X-ray monitors • Absolute maximum ratings Ta=25 °C

photodiode 011

Abstract: KPIN1056E01 S8283 SE-171
Contextual Info: PHOTODIODE Si PIN photodiode S8283 Photodiode chips arranged on flexible PC board Features Applications l Photodiode using flexible cable l 3D wiring possible l Thin package: 1.5 mm thick Max. l Active area: 1.05 x 1.05 mm l Laser monitor, etc. • Absolute maximum ratings Ta=25 °C