ALT70 Search Results

mosfet j122

Abstract: AGR09085EF J118 MOSFET j122 mosfet AGR09085E AGR09085EU JESD22-C101A RM73B2B120J
Contextual Info: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

GM71C4

Abstract: T88L
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71C4800A/AL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The

mosfet j122

Abstract: J118 MOSFET j122 mosfet ALT500
Contextual Info: AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

gm71g4100

Contextual Info: GM71C4100A/AL ES3GOLDSTAR GoldStar ELECTRON CO., LTD. 4,194,304 WORDS x 1 BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ nam ic RAM organized 4 ,1 9 4 ,3 0 4 x 1 Bit. GM71C4100A/AL has realized higher density, higher performance and various functions by uti­

Contextual Info: Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

Contextual Info: DRAFT COPY ONLY Preliminary Data Sheet November 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

z921

Contextual Info: DRAFT COPY ONLY Preliminary Data Sheet September 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

s417t

Abstract: ALT70 ALZ-70 88882 ALZ10 CG1700
Contextual Info: GM71C4170A/AL GM71CS4170A/AL LG Semicon Co.,Ltd. 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C4170 AML is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4170A/AL has realized higher density, higher performance and various functions by utilizing

GM76C88AL FW

Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Contextual Info: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20

A5 GNC

Abstract: ALZ10
Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71C4270A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4270A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The

gm71c4260aj

Contextual Info: @ LG Semicon. Co. LTD._ Description Features The GM71C4260A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4260A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.

gm71c4400az

Contextual Info: T sg r GM71C4400A/AL G oldStar 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density, higher performance and various functions by uti­

gm71c4260a

Abstract: 71C4260
Contextual Info: GM71C4260A/AL GM71CS4260A/AL LG Semicon Co.,Ltd. 262,144 W ORDS x 16 BIT CMOS DYNAMIC RAM Description Features The G M 71C4260A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4260A/AI. has realized higher density, higher performance and various functions by utilizing

gm71c4270a

Contextual Info: GM71C4270A/AL GM71CS4270A/AL LG Semicon Co.,Ltd. 262,144 W ORDS x 16 BIT CMOS DYNAM IC RAM Description Features The GM 71C4270A/AI. is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4270A/AL has realized higher density, higher performance and various functions by utilizing

GM71C4170

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71C4170A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4170A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.

Contextual Info: GM71C4170A/AL GM71CS4170A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS X16BIT CMOS DYNAMIC RAM D escrip tio n F ea tu res The GM71C4170A/AL is the new generation dynamic RAM organized 262,144x16 Bit. GM71C4170A/AL has realized higher density, higher performance and various functions by

auo 014

Contextual Info: GM71C4260A/AL GM71CS4260A/AL GoldStar 262,144 WORDS X16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4260A/AL is th e new generation d y n am ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM71C4260A/AL has realized higher density,

AGR09085EF

Abstract: AGR09085E AGR09085EU JESD22-C101A j122 mosfet
Contextual Info: Preliminary Data Sheet April 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

GM7IC4100

Contextual Info: GM71C4100A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ nam ic RAM organized 4,1 9 4 ,3 0 4 x 1 Bit. GM71C4100A/AL has realized higher density, higher performance and various functions by uti­

GM7IC

Contextual Info: GM71C4400A/AL P2J G o l d S t a r iBBA GOLDSTAR ELECTRON CO., LTD. 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density

Contextual Info: W GM71C4270A/AL GM71CS4270A/AL GoldStar ! 262,144 WORDS x 16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4270A/AL is the new generation dynamic RAM organized 262,144x 16 Bit. GM71C4270A/AL has realized higher density, higher performance and various functions by

JESD22-C101A

Abstract: AGR09085E AGR09085EF AGR09085EU ne 22 mosfet
Contextual Info: Preliminary Data Sheet May 2004 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

tl 0741

Contextual Info: GM71C4800A/AL GM71CS4800A/AL LG S em icon Co.,Ltd. 524,288 W ORDS x 8 BIT CMOS DYNAM IC RAM Description Features The G M 71C4800A/AL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800A/AL has realized higher density, higher performance and various functions by utilizing

GM71C4400BJ70

Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Contextual Info: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80