AM28FXXX Search Results

Contextual Info: Am28Fxxx, 12.0 Volt Flash AM D3 Device Read, Erase, and Program Operations INTRODUCTION This section contains descriptions about the device read, erase, and program operations, and write opera­ tion status of the Am29FxxxA, 12.0 volt family of Flash devices. References to some tables or figures may be

Contextual Info: Am28FxxxA, 12.0 Volt Flash AMDB Device Read, Erase, and Program Operations, Write Operations Status INTRODUCTION This section contains descriptions about the device read, erase, and program operations, and write opera­ tion status of the Am29FxxxA, 12.0 volt family of Flash

AM28F256A

Abstract: Am29Fxxx
Contextual Info: FINAL Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase

Contextual Info: Section 4 An Introduction to Flash Memory WHAT IS FLASH MEMORY? Rash memories are the most cost effective non-volatile alternative for high density mem­ ory applications that require in-system reprogramming. Flash memory is bom out of a marriage of EPROM and E2PROM technology. Accord­

Contextual Info: AM D ii Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: AMENDMENT AMDB A m 2 8 F 01 0A Data Sheet 1 9 96 Flash P r o d u c t s D ata B o o k / H a n d b o o k INTRODUCTION This amendment supersedes information regarding the Am 28F010A device in the 1996 Flash Products Data Book/Handbook, PI D 11796D. This document includes

Am29LV* 64 boot

Abstract: Flash Memory Product Selector Guide TSOP 44-40 Package FBC048 AM29DL323C AMD AM29F016B FGA04 pl 032 AM29F010 Product Selector Guide
Contextual Info: FLASH MEMORY PRODUCT SELECTOR GUIDE 3.0 Volt-only Simultaneous Read/Write 1.8 Volt-only Sector Erase 8 Mbit 16 Mbit 4 Mbit 8 Mbit 16 Mbit 32 Mbit Am29SL800C Am29SL160C Am29DL400B Am29DL800B Am29DL162C Am29DL163C Am29DL322C Am29DL323C 3.0 Volt-only Burst Mode

a*29f10

Abstract: AM29F010
Contextual Info: Using the Operation Status Bits in AMD Devices Application Note First generation Flash memory devices required the system CPU to execute the program and erase algorithms in software. These algorithms consisted of a complex series of operations with strict timing requirements in order to set-up, control and monitor the Flash

hot electron devices

Abstract: AM28F512A
Contextual Info: FINAL Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase

AMD am2 socket pinout

Abstract: AMD socket AM2 pinout amd am2 pinout amd am2 6000 pin diagram AMD am2 socket pin amd am2 socket pin diagram AMD am2 socket pinout VOLTAGE hot electron devices pinout AM2 AMD socket AM2 pinout
Contextual Info: FINAL Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Contextual Info: FINA: AM D ii A m 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from ■ High performance -1 Vt oVc c +1V Embedded Erase Electrical Bulk Chip Erase

AM28F010A

Abstract: TSR032-32-Pin
Contextual Info: FINAL Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

SSO056

Abstract: TSR048 AM29F010 MBit Product Selector Guide
Contextual Info: FLASH MEMORY PRODUCT SELECTOR GUIDE 3.0 Volt-only Simultaneous Read/Write 1.8 Volt-only Sector Erase 8 Mbit 16 Mbit 4 Mbit 8 Mbit 16 Mbit 32 Mbit Am29SL800C Am29SL160C Am29DL400B Am29DL800B Am29DL162C Am29DL163C Am29DL322C Am29DL323C 3.0 Volt-only Burst Mode

am28f020a

Contextual Info: HN A AMD il Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current