AMPLIFIER 10W BLUETOOTH Search Results

Contextual Info: RF3930D RF3930D 10W GaN on SiC Power Amplifier Die Package: Die The RF3930D is a 48V, 10W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general

RF Power Amplifier 125KHz

Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

MMIC X-band amplifier

Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

Contextual Info: PRELIMINARY RFHA3832 RFHA3832 10W GaN Wide-Band Power Amplifier The RFHA3832 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density

Amplifier 10W bluetooth

Abstract: DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector RF3930d 3930D SiC diode die
Contextual Info: RF3930D 10W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain = 19dB at 2GHz  48V Typical Performance  Output Power: 16W at P3dB  Drain Efficiency: 70% at P3dB

Contextual Info: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB

RF3930D

Abstract: RF3930
Contextual Info: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB

12w sot23

Abstract: equivalent ic st3232 mini audio amplifier 2w TSSOP16 ST2378E TS4984 TS4990 TS4994 TSM108 li-ion ic prot
Contextual Info: Data communication Digital Part number Dx/Rx Description ICC mA ST3222E ST3232 ST3232E ST3237 ST3237E ST3241E ST3243E STLVDS050 STLVDS051 STLVDS104 STLVDS105 STLVDS31 STLVDS32 STLVDS3486 STLVDS3487 STLVDS47 ST2551E* ST2378E ST3378E* 2/2 2/2 2/2 5/3 5/3 3/5

mosfet d408

Abstract: transistor d407 TRANSISTOR D405 mosfet D403 transistor tp122 D408 mosfet tp122 transistor D408 transistor D303-1 TRANSISTOR D400
Contextual Info: 3-Phase AC/BLDC High Voltage Power Stage Board Users Guide 3PHACBLDCHVPSUG Rev. 1 01/2007 freescale.com 3-Phase AC/BLDC High-Voltage, Power-Stage Board Users Guide by: Petr Frgal Freescale Semiconductor Czech System Center To provide the most up-to-date information, the revision of our documents on the World Wide Web will be

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi

UMK105BJ102KV-F

Abstract: RFMD PA LTE 258-G RFPA2089 LL1608-FSL10NJ lte transceiver
Contextual Info: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features  -60dBc ACPR at 13dBm WCDMA  0.25W Output Power P1dB  Excellent Linearity to DC Power Ratio 

Contextual Info: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features  -60dBc ACPR at 13dBm WCDMA  0.25W Output Power P1dB  Excellent Linearity to DC Power Ratio 

860mhz rf amplifier circuit diagram

Abstract: UMTS gsm RFMD PA LTE
Contextual Info: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features „ -60dBc ACPR at 13dBm WCDMA „ 0.25W Output Power P1dB „ Excellent Linearity to DC Power Ratio „ High Gain: 17.5dB at 2.65GHz

RFPA2089

Abstract: RFMD PA LTE
Contextual Info: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features  -60dBc ACPR at 13dBm WCDMA  0.25W Output Power P1dB  Excellent Linearity to DC Power Ratio 

Contextual Info: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package Style: DFN, 8-Pin, 2mm x 2mm Features High Linearity: OIP3 = 44dBm at 900MHz  Low Noise: NF = 3.5dB at 900MHz  Low DC Power: 5V, 90mA 

WiFi transceiver

Abstract: 860mhz rf amplifier circuit diagram LQP15MN6N2B02D ERJ2RKF1000X 500R07S2R4
Contextual Info: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz to 2700MHz Power Amplifier Package Style: DFN, 8-Pin, 2mm x 2mm Features 1 8 VBIAS Low Noise: NF = 3.5dB at 900MHz RFIN 2 7 RFOUT/VCC  Low DC Power: 5V, 90mA NC 3 400MHz to 2700MHz Operation

860mhz rf amplifier circuit diagram

Abstract: wifi transceiver ERJ2RKF1000X lot date code panasonic ERJ lot date code panasonic Merix LQP15MN6N2B02D ERJ2GEJ202 GRM155R71H102KA01E RFPA1012
Contextual Info: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package Style: DFN, 8-Pin, 2mm x 2mm Features 1 8 VBIAS Low Noise: NF = 3.5dB at 900MHz RFIN 2 7 RFOUT/VCC  Low DC Power: 5V, 90mA NC 3 400MHz to 2700MHz Operation

coilcraft 0805LS-102XJLC

Abstract: ERJ-3GEY0R00V ERJ3GEYJ122V RFCA8818PCK-410 MW-846-C-DD-75 grm188r61a105ka61d
Contextual Info: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Package: Thermally Enhanced SOIC-8 Features  75 Push-Pull Amplifier  40MHz to 1008MHz Operation

RFCA8818PCK-410

Abstract: MW-846-C-DD-75
Contextual Info: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Package: Thermally Enhanced SOIC-8 Features  75 Push-Pull Amplifier  40MHz to 1008MHz Operation

Contextual Info: IS31AP2110 20W STEREO CLASS-D AUDIO AMPLIFIER WITH POWER LIMIT AND DYNAMIC TEMPERATURE CONTROL September 2014 GENERAL DESCRIPTION FEATURES The IS31AP2110 is a high efficiency stereo Class-D audio amplifier with adjustable power limit function and dynamic temperature control. The loudspeaker driver

Contextual Info: IS31AP2110 20W STEREO CLASS-D AUDIO AMPLIFIER WITH POWER LIMIT AND DYNAMIC TEMPERATURE CONTROL Advanced Information May 2014 GENERAL DESCRIPTION FEATURES The IS31AP2110 is a high efficiency stereo class-D audio amplifier with adjustable power limit function and

class d power amplifier schematic

Abstract: class d amplifier schematic zobel class g power amplifier schematic class d amplifier amplifier 5w CLASS D 5W LM4675 LM48310 LM48510
Contextual Info: Class D Amplifier FAQ By John Guy Applications Engineer National Semiconductor Corp. Purpose of this FAQ This FAQ is intended to capture a variety of knowledge about the selection, application, and measurement of Class D amplifiers. The emphasis of this FAQ is towards Class D

ecg msp430

Abstract: I/ecg simulator circuit
Contextual Info: ADS1x9xECG-FE Demonstration Kit User's Guide Literature Number: SLAU384A December 2011 – Revised April 2012 Contents . 5 . 5

fujitsu XTB71

Abstract: XTB71 Maxim MAX8774 G2998F11U xtb71 fujitsu Marvell 88E1116 TRANSISTOR SMD K23 Alcor Micro au6371 NEC lcd inverter schematic 88E1116
Contextual Info: 5 4 3 2 1 First International Computer,Inc D D Portable Computer Group HW Department Board name : MotherBoard Schematic C Project : AMD S1 + Nvidia C51D + MCP51 Version : 0.2 XTB71 C Initial Date : 12/13/2006 Confidential B B Manager Sign by : Avery Lee Drawing by