ERJ3GEYJ122V Search Results

Contextual Info: PTFC262157SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157SH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum

J103 transistor

Abstract: transistor c223
Contextual Info: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced

SEK4

Contextual Info: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with

Contextual Info: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output

RFCA8818PCK-410

Abstract: MW-846-C-DD-75
Contextual Info: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Package: Thermally Enhanced SOIC-8 Features  75 Push-Pull Amplifier  40MHz to 1008MHz Operation

D2061 transistor

Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
Contextual Info: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)

Contextual Info: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, low Noise GaAs Amplifier DUAL CATV 40MHz TO 1008MHz HIGH LINEARITY, LOW NOISE GaAs AMPLIFIER Package: Thermally Enhanced SOIC-8 Features  75 Push-Pull Amplifier  40MHz to 1008MHz Operation

Contextual Info: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced

Contextual Info: PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum

SMD Transistors w27

Abstract: p416 diode on semiconductor SMD Transistors w26
Contextual Info: User's Guide SLAU280A – March 2009 – Revised October 2012 TLV320AIC36EVM-K This user's guide describes the characteristics, operation, and use of the TLV320AIC36EVM-K. This evaluation module EVM features a complete stereo audio codec with several inputs and outputs,

HDR1X4

Abstract: HDR 1X4 ERJ-3GEY0R00V RFCA8818
Contextual Info: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, low Noise GaAs Amplifier DUAL CATV 40MHz TO 1008MHz HIGH LINEARITY, LOW NOISE GaAs AMPLIFIER Package: Thermally Enhanced SOIC-8 Features  75 Push-Pull Amplifier  40MHz to 1008MHz Operation

Contextual Info: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced

ATC100B4R3CW500X

Abstract: PTVA035002EV V1
Contextual Info: PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down

schematic diagram UPS 600 Power tree

Abstract: SMD Transistors w27 schematic diagram UPS numeric digital 600 plus H9TP17 schematic diagram UPS power tree 600 schematic diagram Power Tree UPS 600 SMD Transistors w26 DIODE SMD W12 75 electret mic panasonic w31 smd
Contextual Info: User's Guide SLAU280 – March 2009 TLV320AIC36EVM-K This user's guide describes the characteristics, operation, and use of the TLV320AIC36EVM-K. This evaluation module EVM features a complete stereo audio codec with several inputs and outputs, extensive audio routing, mixing, and effects capabilities. A complete circuit description, schematic

power tr unit j122 5 pin

Abstract: power tr unit j122 PTVA120251EA lm7805 3A A 4562 L 4440 J233 AG J56-1
Contextual Info: PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

Contextual Info: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

4871I

Contextual Info: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

PTFB092707FH

Contextual Info: PTFB092707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 – 960 MHz Description The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

Contextual Info: PTVA120501EA Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Description The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down

PTFC262808SV

Contextual Info: PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with

coilcraft 0805LS-102XJLC

Abstract: ERJ-3GEY0R00V ERJ3GEYJ122V RFCA8818PCK-410 MW-846-C-DD-75 grm188r61a105ka61d
Contextual Info: RFCA8818 RFCA8818 Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Dual CATV 40MHz to 1008MHz High Linearity, Low Noise GaAs Amplifier Package: Thermally Enhanced SOIC-8 Features  75 Push-Pull Amplifier  40MHz to 1008MHz Operation

br cornell dubilier

Contextual Info: PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Description The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down

Contextual Info: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced

Contextual Info: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with