AND8195 Search Results

SO8FL

Abstract: FOOTPRINT PCB nsmd smd stencil tension WS3060 so8 pcb pattern 1505C 020C
Contextual Info: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat

nsmd smd

Abstract: AND8195 SO8FL Solder paste stencil life AND8195/D 020C 1505C
Contextual Info: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat

4841NH

Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
Contextual Info: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices

Contextual Info: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

Contextual Info: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package

Contextual Info: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

Contextual Info: NTMFS4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

Contextual Info: NTMFS4933N Power MOSFET 30 V, 210 A, Single N−Channel, SO−8 FL Features • Low RDS on to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Applications • OR−ing FET, Power Load Switch, Motor Control

4839N

Abstract: on semiconductor NTMFS4839N datasheet NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G
Contextual Info: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

NTMFS4833NT1G

Contextual Info: NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, DFN5 SO−8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices

4933N

Contextual Info: NTMFS4933N Power MOSFET 30 V, 210 A, Single N−Channel, SO−8 FL Features • Low RDS on to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Applications • OR−ing FET, Power Load Switch, Motor Control

Contextual Info: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

NTMFS4833NT1G

Contextual Info: NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

Contextual Info: NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package

Contextual Info: NTMFS4933N Power MOSFET 30 V, 210 A, Single N−Channel, SO−8 FL Features • Low RDS on to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Applications • OR−ing FET, Power Load Switch, Motor Control

Contextual Info: NTMFS4835N Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

Contextual Info: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package

Contextual Info: NTMFS4845N Power MOSFET 30 V, 115 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package

4837NH

Abstract: NTMFS4837NHT1G NTMFS4837NHT3G
Contextual Info: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*

4851N

Abstract: NTMFS4851NT1G NTMFS4851NT3G
Contextual Info: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

4846N

Abstract: NTMFS4846N NTMFS4846NT1G NTMFS4846NT3G mosfet 4846n
Contextual Info: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

4839Nh

Abstract: NTMFS4839NHT1G NTMFS4839NHT3G
Contextual Info: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*

NTMFS4821NT3G

Abstract: NTMFS4821N 4821n NTMFS4821NT1G
Contextual Info: NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package

4841N

Abstract: NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G
Contextual Info: NTMFS4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com