AO34 Search Results

HTGB

Contextual Info: AOS Semiconductor Product Reliability Report AO3404/AO3404L, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Feb 16, 2006 1 This AOS product reliability report summarizes the qualification result for AO3404. Accelerated

AO3404AL

Contextual Info: AOS Semiconductor Product Reliability Report AO3404A/AO3404AL, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com May 28, 2008 1 This AOS product reliability report summarizes the qualification result for AO3404A. Accelerated

SEC540

Contextual Info: AOS Semiconductor Product Reliability Report AO3435/AO3435L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AO3435. Accelerated

AO3401A

Abstract: P-Channel MOSFET AO3401
Contextual Info: AO3401A 30V P-Channel MOSFET General Description Product Summary The AO3401A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications.

AO3403

Abstract: P-Channel MOSFET
Contextual Info: AO3403 30V P-Channel MOSFET General Description Product Summary The AO3403 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -2.6A

JESD22-A108

Abstract: JESD22*108
Contextual Info: AOS Semiconductor Product Reliability Report AO3421E, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AO3421E. Accelerated environmental tests are performed on a specific sample size, and then followed

smd 58a transistor 6-pin

Abstract: KO3400 AO3400 smd transistor 26 TRANSISTOR SMD 1A ao3400 transistor
Contextual Info: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3400 AO3400 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS (V) = 30V 0.4 3 (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) 52m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = 2.5V) +0.05 0.1-0.01 0-0.1

AO3400

Abstract: N-Channel MOSFET 58A2 MOSFET N-Channel AO3400
Contextual Info: AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V)

Contextual Info: AOS Semiconductor Product Reliability Report AO3420/AO3420L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 20, 2006 1 This AOS product reliability report summarizes the qualification result for AO3420. Accelerated

A18E smd

Abstract: A18E
Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode Power MOSFET AO3401 SOT-23-3 Unit: mm • Features +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -30V (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 1 ● RDS(ON) ＜ 120mΩ (VGS = -2.5V) 0.55 50m +0.2 1.6 -0.1 RDS(ON) +0.2

AO3419

Abstract: AO3419L
Contextual Info: Rev 1:Nov 2004 AO3419, AO3419L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This

Contextual Info: AO3410 N-Channel Enhancement Mode Field Effect Transistor TO-236 SOT-23 Features VDS (V) = 30V ID = 5.8 A RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V) RDS(ON) < 70mΩ (VGS = 1.8V) General Description D The AO3410 uses advanced trench technology to

Contextual Info: AO3401 P-Channel Enhancement Mode Field Effect Transistor Features TO-236 SOT-23 VDS (V) = -30V ID = -4.2 A (V GS = -10V) RDS(ON) < 50m Ω (VGS = -10V) RDS(ON) < 65m Ω (VGS = -4.5V) RDS(ON) < 120m Ω (VGS = -2.5V) D G D S G S General Description The AO3401 uses advanced trench technology to

ao3411

Abstract: AO3413 transistor AO3413 TRANSISTOR C-111 marking code RL33
Contextual Info: June 2003 AO3413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3413 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

43a sot23

Abstract: ao34
Contextual Info: AO3433 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3433 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard

AO3407A

Abstract: 43a sot23
Contextual Info: AO3407A 30V P-Channel MOSFET General Description Product Summary The AO3407A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) VDS -30V

AO3407

Abstract: 87m diode
Contextual Info: AO3407 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@ 4.1A < 64.5m Ω RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L

AO3400

Abstract: MOSFET N-Channel AO3400 N-Channel, 30V, 4.0A, Power MOSFET
Contextual Info: AO3400 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS ON , Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

ao3405

Abstract: AO3405L
Contextual Info: AO3405 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3405 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3405 is Pb-free

Contextual Info: AO3404A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3404A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow

Contextual Info: AO3460 60V N-Channel MOSFET General Description Product Summary The AO3460 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide

Contextual Info: AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

Contextual Info: AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

Contextual Info: AO3419 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3419/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM