AO3418L Search Results

AO3418L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AO3418L		Alpha & Omega Semiconductor	N-Channel Enhancement Mode Field Effect Transistor	Original	PDF	114.02KB	4

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Alpha & Omega Semiconductor


Alpha & Omega Semiconductor AO3418L MOSFET N-CH 30V 3.8A SOT23-3
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AO3418L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: AO3418, AO3418L Green Product N-Channel Enhancement Mode Field Effect Transistor TO-236 Top View (SOT-23) Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) General Description The AO3418 uses advanced trench technology to	Original	AO3418, AO3418L O-236 OT-23) AO3418	PDF
AO3418L Abstract: AO3418 8570M Contextual Info: Rev 3: Nov 2004 AO3418, AO3418L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This	Original	AO3418, AO3418L AO3418 O-236 OT-23) AO3418L 8570M	PDF
HTGB Contextual Info: AOS Semiconductor Product Reliability Report AO3418/AO3418L, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Nov 16, 2005 1 This AOS product reliability report summarizes the qualification result for AO3418. Accelerated	Original	AO3418/AO3418L, AO3418. AO3418 10-5eV Mil-Std-105D HTGB	PDF
AO3418L Abstract: AO3418 Contextual Info: AO3418 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3418/L uses advanced trench technology to provide excellent RDS ON , very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO3418 AO3418/L AO3418 AO3418L -AO3418L O-236 OT-23)	PDF
Contextual Info: AO3418 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3418 uses advanced trench technology to provide excellent RDS ON , very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO3418 AO3418 AO3418L AO3418L O-236 OT-23)	PDF