AO4801 Search Results

AO4801

Contextual Info: AO4801 30V P-Channel MOSFET General Description Product Summary The AO4801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It may be used in a

AO4801AL

Abstract: 933 SOIC8
Contextual Info: AO4801AL 30V P-Channel MOSFET General Description Product Summary The AO4801AL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is suitable for use as a load switch or in PWM applications.

AO4801A

Contextual Info: AO4801A 30V P-Channel MOSFET General Description Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is suitable for use as a load switch or in PWM applications.

AO4801A

Contextual Info: AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4801A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4801A is Pb-free

AO4801

Contextual Info: AOS Semiconductor Product Reliability Report AO4801/AO4801L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Apr 25, 2006 1 This AOS product reliability report summarizes the qualification result for AO4801. Accelerated

AO4801

Abstract: AO4801L
Contextual Info: AO4801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

Contextual Info: Dual P-channel MOSFET ELM14801AB-N •General description ■Features ELM14801AB-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V)

STM9435

Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
Contextual Info: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC

AO4946

Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22

AO4403

Abstract: 4801 soic8 AO4400
Contextual Info: December 2001 AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

NPN transistor c828

Abstract: c828 npn transistor ST 950403 IT8282M zener st c903 d 9329 k8m800 ISS355 zener smd diode h9 st c632 Zener diode
Contextual Info: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : AN5_K8_VIA K8N800+VT8235CE 2. PCI & IRQ & DMA Description : Version : 0.5 PP 3. Block Diagram :

Contextual Info: デュアルパワー P チャンネル MOSFET ELM14801AB-N •概要 ■特長 ELM14801AB-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V オン抵抗という特性を備えた大電流デュアルパワー ・ Id=-5A Vgs=-10V MOSFET です。

semiconductor cross reference

Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
Contextual Info: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC

AO4402

Abstract: AO4800 mpf201 AO4400 AO4401
Contextual Info: March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

ELM14801AB

Contextual Info: 双 P 沟道 MOSFET ELM14801AB-N •概要 ■特点 ELM14801AB-N 是 P 沟道低输入电容低工作电压、 •Vds=-30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=-5A Vgs=-10V ·Rds(on) < 48mΩ (Vgs=-10V) ·Rds(on) < 57mΩ (Vgs=-4.5V)

Contextual Info: Dual P-channel MOSFET ELM54801AA-N •General description ■Features ELM54801AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V)

AO4400

Abstract: AO4401 AO4800
Contextual Info: July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in