AOD41 Search Results

AOD417

Abstract: AOD417 transistor
Contextual Info: AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD417 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

AOD410

Contextual Info: AOD410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD410 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 30V

AOD4132

Contextual Info: AOD4132 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4132 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.

AOD4136

Abstract: S734
Contextual Info: AOD4136 TM N-Channel SDMOS POWER Transistor General Description Features The AOD4136 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal

AOD4184

Contextual Info: AOD4184 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4184 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

Contextual Info: AOD4189 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4189/L uses advanced trench technology and design to provide excellent R DS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

aod41

Contextual Info: AOD4104 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4104 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a low side switch in CPU core power

AOD413

Contextual Info: AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

TRANSISTOR D412

Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A
Contextual Info: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.

mj8050

Abstract: AOD4112
Contextual Info: AOD4112 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in

AOD4110

Contextual Info: AOD4110 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

AOD412

Abstract: AOD4128
Contextual Info: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in

Contextual Info: AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

Contextual Info: AOD4100 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4100 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power

AOD4185

Contextual Info: AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS ON and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high

Contextual Info: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is

Contextual Info: AOD4180 80V N-Channel MOSFET TM SDMOS General Description Product Summary The AOD4180 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal

Contextual Info: AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

Contextual Info: AOD4182 80V N-Channel MOSFET TM SDMOS General Description Product Summary The AOD4182 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal

Contextual Info: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

AOD4126

Abstract: AOI4126 aod412
Contextual Info: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is

AOD4185

Abstract: AOI41
Contextual Info: AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench technology to provide excellent R DS ON and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high

AOD4130

Abstract: aod41
Contextual Info: AOD4130 60V N-Channel MOSFET General Description Product Summary VDS The AOD4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,

AOD4184

Abstract: AOI4184 AOD418 TO252-DPAK
Contextual Info: AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current