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    AOD412 Price and Stock

    Alpha & Omega Semiconductor AOD4126

    MOSFET N-CH 100V 7.5A/43A TO252
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    DigiKey AOD4126 Reel 10,000 2,500
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    AOD4126 Cut Tape 68 1
    • 1 $0.99
    • 10 $0.813
    • 100 $0.6321
    • 1000 $0.43642
    • 10000 $0.43642
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    AOD4126 Digi-Reel 1
    • 1 $0.99
    • 10 $0.813
    • 100 $0.6321
    • 1000 $0.43642
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    TME AOD4126 774 1
    • 1 $0.881
    • 10 $0.697
    • 100 $0.553
    • 1000 $0.516
    • 10000 $0.516
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    ComSIT USA AOD4126 1,200
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    Alpha & Omega Semiconductor AOD4120

    MOSFET N-CH 20V 25A TO252
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    Alpha & Omega Semiconductor AOD4124

    MOSFET N-CH 100V 7.5A/54A TO252
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    Alpha & Omega Semiconductor AOD4128

    MOSFET N-CH 25V 60A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AOD4128 Reel 2,500
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    Alpha & Omega Semiconductor AOD4120L

    MOSFET N-CH 20V 25A TO252
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    AOD412 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AOD412 Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AOD412 Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AOD4120 Alpha & Omega Semiconductor SMPS - N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AOD4120 Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AOD4120L Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO252 Original PDF
    AOD4124 Alpha & Omega Semiconductor SMPS - 100V N-Channel MOSFET SDMOS Original PDF
    AOD4126 Alpha & Omega Semiconductor General Purpose - 100V N-Channel MOSFET SDMOS Original PDF
    AOD4128 Alpha & Omega Semiconductor General Purpose - N-Channel Enhancement Mode Field Effect Transistor (Replacement AOD508) Original PDF
    AOD4128 Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    AOD412L Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF

    AOD412 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR D412

    Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A
    Text: July 2003 AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


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    PDF AOD412 AOD412 O-252 TRANSISTOR D412 D412 transistor d412 DPAK d412 omega D412 d-pak JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A

    AOD412

    Abstract: AOD4128
    Text: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in


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    PDF AOD4128 AOD4128 AOD412 O-252 1E-05 1E-04

    Untitled

    Abstract: No abstract text available
    Text: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


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    PDF AOD4126/AOI4126 AOD4126 AOI4126 19ABCDEF O-251A

    Untitled

    Abstract: No abstract text available
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


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    PDF AOD4120 AOD4120 O-252 DraiD4120

    AOD4126

    Abstract: AOI4126 aod412
    Text: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


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    PDF AOD4126/AOI4126 AOD4126 AOI4126 O-251A aod412

    ao412

    Abstract: ao41
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120/L uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose


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    PDF AOD4120 AOD4120/L AOD4120L -AO4120L O-252 ao412 ao41

    AOD4128

    Abstract: 304 pd
    Text: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in


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    PDF AOD4128 AOD4128 O-252 304 pd

    AOD412

    Abstract: aoD412 transistor TRANSISTOR AOD412 AOD412L b100Current
    Text: AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original
    PDF AOD412 AOD412 AOD412L O-252 aoD412 transistor TRANSISTOR AOD412 b100Current

    AOD4120L

    Abstract: AOD4120
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard


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    PDF AOD4120 AOD4120 AOD4120L O-252

    3V02

    Abstract: aod41
    Text: AOD4122 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4122 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


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    PDF AOD4122 O-252 3V02 aod41

    AOD4126

    Abstract: AOI4126
    Text: AOD4126/AOI4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


    Original
    PDF AOD4126/AOI4126 AOD4126 AOI4126 O-251A Sy/AOI4126

    Untitled

    Abstract: No abstract text available
    Text: Rev 2: June 2004 AOD412, AOD412L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use


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    PDF AOD412, AOD412L AOD412 AOD412L O-252

    Untitled

    Abstract: No abstract text available
    Text: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


    Original
    PDF AOD4126/AOI4126 AOD4126 AOI4126 O-251A

    Untitled

    Abstract: No abstract text available
    Text: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in


    Original
    PDF AOD4128 AOD4128 27ABC

    Untitled

    Abstract: No abstract text available
    Text: AOD4124 100V N-Channel MOSFET TM SDMOS General Description Product Summary The AOD4124 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal


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    PDF AOD4124 AOD4124

    aoD412 transistor

    Abstract: No abstract text available
    Text: AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original
    PDF AOD412 AOD412 AOD412L O-252 aoD412 transistor

    AOD4120

    Abstract: No abstract text available
    Text: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original
    PDF AOD4120 AOD4120 O-252 CurrentOD4120

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


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    PDF O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025

    AO4946

    Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
    Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22


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