APT1001R1 Search Results

APT1001R1 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
APT1001R1AVR	Advanced Power Technology	POWER MOS V 1000V 9A 1.100 Ohm	Original	PDF	70.18KB	4
APT1001R1AVR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF	60.56KB	4
APT1001R1BN	Advanced Power Technology	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF	53.66KB	4
APT1001R1BN	Microsemi	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10.5A TO247AD	Original	PDF	58.96KB
APT1001R1BNR	Advanced Power Technology	High Voltage Power MOSFETs	Scan	PDF	189.39KB	4
APT1001R1BVFR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF	72.52KB	4
APT1001R1DN	Advanced Power Technology	APT Power MOS IV Commercial and Custom DIE	Scan	PDF	389.75KB	4
APT1001R1HN	Advanced Power Technology	High Voltage Power MOSFETs	Scan	PDF	227.6KB	4
APT1001R1HVR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF	68.74KB	4
APT1001R1HVR	Unknown	High Voltage, 1000V 8.4A, MOS-FET N-Channel enhanced	Original	PDF	115.2KB	4
APT1001R1SN	Advanced Power Technology	Power MOS IV	Scan	PDF	247.63KB	4

APT1001R1 Price and Stock

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Microchip Technology Inc APT1001R1BN MOSFET N-CH 1000V 10.5A TO247AD
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DigiKey	APT1001R1BN	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NAC	APT1001R1BN					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc APT1001R1BNG
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Onlinecomponents.com	APT1001R1BNG					1 $0.00 10 $0.00 100 $0.00 1000 $0.00 10000 $0.00	Buy Now
NAC	APT1001R1BNG					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microsemi Corporation APT1001R1AN 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
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Quest Components	APT1001R1AN		19			1 $15.00 10 $11.25 100 $11.25 1000 $11.25 10000 $11.25	Buy Now
Advanced Power Technology APT1001R1AN 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	APT1001R1AN		11			1 $15.00 10 $11.25 100 $11.25 1000 $11.25 10000 $11.25	Buy Now

APT1001R1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APT1001R1HN Abstract: APT1001R3HN APT901R1HN APT901R3HN Contextual Info: A DVANCE D POUER T EC H N O L OG Y b lE D • A D 02S7101 V A N DDOOBäl C E M43 H A V P D POW ER Te c h n o l o g y * APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN POWER MOS IV 1000V 900V 1000V 900V 9.5A 9.5A 9.0A 9.0A 1.10Q 1.10Q 1.30Q 1.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	02S11 APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 901r1hn 1001r1hn 901r3hn 1001r3hn HGURE13,	PDF
Contextual Info: APT1001R1HVR ADVANCED POW ER Te c h n o l o g y 1000V 9A 1.1000 POWER MOSV Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	APT1001R1HVR O-258 APT1001R1HVR	PDF
443h Contextual Info: ADVANCED POWER TECHNOLOGY . . « o „ , tm POWER MOS IV blE D • QSSTTOS 443 H A V P ADVANCED P o w er Te c h n o l o g y APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 1000V 900V 1000V 900V 9.5A 1.10Q 9.5A 1.1 OQ 9.0A 1.30Q 9.0A 1.30D N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 901R1HN 1001R1HN 901R3HN 1001R3HN LinearPT1001R1/1001R3HN RGURE11, 443h	PDF
APT1001R1AN Abstract: APT1001R3AN Contextual Info: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	APT1001R1AN APT901R1 APT1001R3AN APT901R3AN 901R1AN 1001R1 901R3AN 1001R3AN O-204AA)	PDF
Contextual Info: ADVANCED POW ER Te c h n o l o g y APT1001R1SN 1000V 10.5A 1.1 Ofl POWER MOS IV' N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V D SS >D All Ratings: T c = 25°C unless otherwise specified. Parameter APT1001R1SN UNIT Drain-Source Voltage	OCR Scan	APT1001R1SN APT1001R1SN	PDF
TO-204AE Package Contextual Info: APT1001R1AVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE	Original	APT1001R1AVR 100mS O-204AE) TO-204AE Package	PDF
TO-258 Abstract: d 434 Contextual Info: APT1001R1HVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE 50 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE	Original	APT1001R1HVR 100mS O-258 TO-258 d 434	PDF
APT1001R1BNR Abstract: 1001R1 Contextual Info: A dvanced P ow er Te c h n o lo g y O ü * 'W APT1001RBNR 1000V 11.0A 1.00U APT1001R1BNR 1000V 10.5A 1.100 S t R m o s AVALANCHE RATED r ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ^DM V GS V GSM PD V sTG All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT1001RBNR APT1001R1BNR 001R1Ö -100m O-247AD 1001R1	PDF
Contextual Info: APT1001R1BFLC 1000V POWER MOS VITM 11A 1.100W FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.	Original	APT1001R1BFLC O-247 O-247 APT1001R1BFLC	PDF
Contextual Info: APT1001R1AVR • R A dvanced W .\A pow er Te c h n o lo g y " 9a 1000v 1.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	APT1001R1AVR 1000v APT1001R1AVR 00A/ns IL-STD-750	PDF
1001r1bn Abstract: 130Q APT1001R3BN diode 1000V Contextual Info: ADVANCED PO W ER Te c h n o lo g y O D O S POWER MOS IV® APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0A 10.0A 1.100 1.10Q 1.30Q 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.	OCR Scan	APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN O-247AD 130Q diode 1000V	PDF
Contextual Info: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN APT1001R1/901R1/1001R3/901R3BN O-247AD	PDF
Contextual Info: A d va n ced P o w er Te c h n o l o g y O D APT1001RBNR 1000V 11.0A 1.0012 APT1001R1BNR 1000V 10.5A 1.100 O S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified.	OCR Scan	APT1001RBNR APT1001R1BNR APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD 0001S7T	PDF
APT1001RBNR Contextual Info: A d van ced P o w er Te c h n o l o g y • O D O S APT1001RBNR 1000V 11.0A 1.000 APT1001R1BNR 1000V 10.5A 1.10D POWER MOS IV< UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm V GS VGSM PD All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD	PDF

Contextual Info: ADVANCED P ow er Te c h n o l o g y ' OD APT1001R1BN 1000V 10.5A 1.1 Oil OS APT1001R3BN 1000V 10.0A 1.30Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT1001R1BN APT1001R3BN 1001RBN 1001R3BN 150VOLTAGE APT1001R1/1001R3BN O-247AD	PDF
APT1004RGN Contextual Info: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750	OCR Scan	APT5011AFN APT40M 80AFN APT1004RGN	PDF
APT1001R1BN Abstract: APT901R1BN 1001R3BN 1001r1bn Contextual Info: A d v a n ced ROW ER Te c h n o l o g y o D O S POWER MOS IV< APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5 A 10.5 A 10.0A 10.0 A 1.10Q 1.10Q 1.3012 1.30Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.	OCR Scan	APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1 901R3BN 1001R3BN 100mS APT10 1001r1bn	PDF
Contextual Info: APT1001R1HVR 9A 1.100Ω 1000V POWER MOS V TO-258 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT1001R1HVR O-258 O-258	PDF
210 RBN Abstract: 1001r1bn 1001RBN NA 1001 APT1001RBNR OA 10 diode APT1001 APT1001R1BNR 1001R1BNR Contextual Info: ADVANCED P o w er Te c h n o l o g y O D O S APT1001RBNR 1000V 11.0A 1.00Q APT1001R1BNR 1000V 10.5A 1.10ÍÍ POWER MOS IV® AVALANCHE RATED N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol VDSS •d ' dm V GS VGSM PD t j ,t stg	OCR Scan	APT1001RBNR APT1001R1BNR O-247AD 210 RBN 1001r1bn 1001RBN NA 1001 OA 10 diode APT1001 1001R1BNR	PDF
APT1001R1HVR Contextual Info: APT1001R1HVR Ω 8.4A 1.200Ω 1000V POWER MOS V TO-258 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT1001R1HVR O-258 O-258 APT1001R1HVR	PDF
Contextual Info: A dvanced P ow er Te c h n o lo g y * O D APT1001R1SN O s 1000V 10.5A 1.1 OQ POWER MOS IV N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter APT1001R1SN UNIT Drain-Source Voltage	OCR Scan	APT1001R1SN	PDF
APT1001R1AVR Contextual Info: APT1001R1AVR 9A 1.100Ω 1000V POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT1001R1AVR O-204AE) APT1001R1AVR	PDF
1001RBN Abstract: 1001R3BN 1001rb APT1001R3BN APT1001R1BN Contextual Info: D TO-247 G APT1001R1BN 1000V 10.5A 1.10Ω S POWER MOS IV APT1001R3BN 1000V 10.0A 1.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage	Original	O-247 APT1001R1BN APT1001R3BN 1001RBN 1001R3BN O-247AD 1001RBN 1001R3BN 1001rb	PDF
Contextual Info: APT1001R1AVR 1000V 9A 1.100W POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT1001R1AVR O-204AE)	PDF

APT1001R1 Search Results

APT1001R1 Datasheets (11)

APT1001R1 Price and Stock

Microchip Technology Inc APT1001R1BN

Microchip Technology Inc APT1001R1BNG

Microsemi Corporation APT1001R1AN

Advanced Power Technology APT1001R1AN

APT1001R1 Datasheets Context Search

APT1001R1HN

443h

APT1001R1AN

TO-204AE Package

TO-258

APT1001R1BNR

1001r1bn

APT1001RBNR

APT1004RGN

APT1001R1BN

210 RBN

APT1001R1HVR

APT1001R1AVR

1001RBN